Substrate
-
SiC substrate 3in 350um kauri nau'in HPSI Prime Grade Dummy grade
-
Silicon Carbide SiC Ingot 6inch N Type Dummy/prime grade kauri za a iya keɓance shi musamman
-
6 a cikin Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
-
SiC Ingot 4H Dia 4in 6in Kauri 5-10mm Bincike / Daraja Mai Ban Mamaki
-
6in sapphire Boule sapphire blank single crystal Al2O3 99.999%
-
Sic Substrate Silicon Carbide Wafer 4H-N Nau'in Babban Taurin Tsabtace Tsabtace Firayim Mai Kyau Gogewa
-
Wafer ɗin Silicon Carbide mai inci 2, 6H-N Nau'in Babban Daraja na Bincike, Daraja Mai Inci 330μm, Kauri 430μm
-
2in silicon carbide substrate 6H-N mai gefe biyu diamita mai gogewa 50.8mm matakin bincike na matakin samarwa
-
Nau'in p-type 4H/6H-P 3C-N TYPE SIC substrate 4in 〈111〉± 0.5°Sifili MPD
-
SiC substrate P-type 4H/6H-P 3C-N 4inci tare da kauri na 350um Matsayin samarwa Matakin ƙira
-
Wafer SiC mai inci 6 Sifili mai matakin MPD na samarwa.
-
Wafer SiC na nau'in P-type 4H/6H-P 3C-N Kauri inci 6 350 μm tare da Babban Tsarin Lebur