Substrate
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2inch Silicon Carbide Wafer 6H-N Nau'in Babban Matsayin Bincike Grade Dummy Grade 330μm 430μm Kauri
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2inch silicon carbide substrate 6H-N diamita mai gefe biyu mai gogewa 50.8mm matakin bincike na samarwa
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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SiC substrate P-nau'in 4H/6H-P 3C-N 4inch tare da kauri na 350um Production sa Dummy sa
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4H/6H-P 6inch SiC wafer Zero matakin MPD Samar da Grade Dummy Grade
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P-nau'in SiC wafer 4H/6H-P 3C-N 6inch kauri 350 μm tare da Farko Flat Orientation
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Tsarin TVG akan quartz sapphire BF33 wafer Gilashin wafer naushi
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Single Crystal Silicon Wafer Si Substrate Nau'in N/P Zaɓaɓɓen Silicon Carbide Wafer
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N-Nau'in SiC Composite Substrates Dia6inch Babban ingancin monocrystaline da ƙarancin inganci.
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Semi-Insulating SiC akan Si Composite Substrates
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Semi-Insulating SiC Composite Substrates Dia2inch 4inch 6inch 8inch HPSI
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Roba Sapphire boule Monocrystal Sapphire Blank Diamita da kauri za a iya musamman