Wafer SiC na nau'in P-type 4H/6H-P 3C-N Kauri inci 6 350 μm tare da Babban Tsarin Lebur
Bayani dalla-dalla Nau'in 4H/6H-P SiC Composite Substrates Teburin sigogi na gama gari
6 Silinda mai diamita inci (SiC) Substrate Ƙayyadewa
| Matsayi | Sifili Samar da MPDMaki (Z) maki) | Tsarin Samarwa na DaidaitacceMaki (P) maki) | Daraja ta Karya (D maki) | ||
| diamita | 145.5 mm ~ 150.0 mm | ||||
| Kauri | 350 μm ± 25 μm | ||||
| Tsarin Wafer | -Offaxis: 2.0°-4.0°zuwa [1120] ± 0.5° don 4H/6H-P, A kan axis: 〈111〉± 0.5° don 3C-N | ||||
| Yawan bututun micropipe | 0 cm-2 | ||||
| Juriya | nau'in p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Babban Tsarin Faɗi | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Babban Tsawon Lebur | 32.5 mm ± 2.0 mm | ||||
| Tsawon Lebur na Biyu | 18.0 mm ± 2.0 mm | ||||
| Tsarin Faɗi na Biyu | Fuskar silicon sama: 90° CW. daga Prime flat ± 5.0° | ||||
| Keɓewa a Gefen | 3 mm | 6 mm | |||
| LTV/TTV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Taurin kai | Yaren mutanen Poland Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Fashewar Gefen Ta Hanyar Haske Mai Tsanani | Babu | Tsawon jimilla ≤ 10 mm, tsawonsa ɗaya ≤ 2 mm | |||
| Faranti na Hex ta Haske Mai Tsanani | Yankin da aka tara ≤0.05% | Yankin da aka tara ≤0.1% | |||
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Babu | Yankin da aka tara≤3% | |||
| Abubuwan da ke tattare da Carbon na gani | Yankin da aka tara ≤0.05% | Yankin da aka tara ≤3% | |||
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | Babu | Tsawon jimla ≤1 × diamita na wafer | |||
| Ƙwayoyin Gefen Suna da Haske Mai Tsanani | Babu wanda aka yarda da faɗin da zurfin ≥0.2mm | An yarda da 5, ≤1 mm kowanne | |||
| Gurɓatar Fuskar Silicon Ta Hanyar Ƙarfi Mai Girma | Babu | ||||
| Marufi | Akwatin Wafer Mai Yawa ko Akwatin Wafer Guda ɗaya | ||||
Bayanan kula:
※ Iyakokin lahani sun shafi dukkan saman wafer sai dai yankin da aka ware gefen. # Ya kamata a duba ƙyallen a fuskar Si o
Wafer ɗin SiC na nau'in P, 4H/6H-P 3C-N, tare da girman inci 6 da kauri μm 350, yana taka muhimmiyar rawa a cikin samar da na'urorin lantarki masu ƙarfi a masana'antu. Kyakkyawan watsa wutar lantarki da ƙarfin lantarki mai ƙarfi sun sa ya zama mafi dacewa don ƙera abubuwan da ke cikin su kamar maɓallan wutar lantarki, diode, da transistors da ake amfani da su a cikin yanayin zafi mai zafi kamar motocin lantarki, grid na wutar lantarki, da tsarin makamashi mai sabuntawa. Ikon wafer ɗin na aiki yadda ya kamata a cikin mawuyacin yanayi yana tabbatar da ingantaccen aiki a cikin aikace-aikacen masana'antu waɗanda ke buƙatar yawan wutar lantarki da ingantaccen makamashi. Bugu da ƙari, babban yanayin shimfidarsa yana taimakawa wajen daidaita daidaito yayin ƙera na'urori, yana haɓaka ingancin samarwa da daidaiton samfura.
Fa'idodin abubuwan haɗin gwiwa na N-type SiC sun haɗa da
- Babban Tsarin Zafin Jiki: Wafers ɗin SiC na nau'in P suna wargaza zafi yadda ya kamata, wanda hakan ya sa suka dace da amfani da su a yanayin zafi mai yawa.
- Babban Wutar Lantarki Mai Rushewa: Yana da ikon jure wa manyan ƙarfin lantarki, yana tabbatar da aminci a cikin na'urorin lantarki masu ƙarfi da manyan ƙarfin lantarki.
- Juriya ga Muhalli Mai Wuya: Kyakkyawan juriya a cikin yanayi mai tsanani, kamar yanayin zafi mai yawa da muhallin da ke lalata muhalli.
- Ingantaccen Canza Wutar Lantarki: Nau'in P-doping yana sauƙaƙa sarrafa wutar lantarki yadda ya kamata, yana sa wafer ɗin ya dace da tsarin canza makamashi.
- Babban Tsarin Faɗi: Yana tabbatar da daidaito daidai lokacin ƙera, yana inganta daidaiton na'ura da daidaito.
- Siraran Tsarin (350 μm): Kauri mafi kyau na wafer yana tallafawa haɗakar na'urorin lantarki na zamani waɗanda ke da iyaka da sarari.
Gabaɗaya, wafer ɗin SiC na nau'in P, 4H/6H-P 3C-N, yana ba da fa'idodi da yawa waɗanda suka sa ya dace sosai da aikace-aikacen masana'antu da na lantarki. Babban ƙarfin watsa wutar lantarki da ƙarfin lantarki mai lalacewa yana ba da damar aiki mai inganci a cikin yanayin zafi mai yawa da ƙarfin lantarki mai yawa, yayin da juriyarsa ga yanayi mai tsauri ke tabbatar da dorewa. Doping ɗin nau'in P yana ba da damar canza wutar lantarki mai inganci, yana mai da shi ya dace da tsarin lantarki da makamashi. Bugu da ƙari, babban yanayin lebur na wafer yana tabbatar da daidaito daidai lokacin aikin ƙera, yana haɓaka daidaiton samarwa. Tare da kauri na 350 μm, ya dace sosai don haɗawa cikin na'urori masu ci gaba, masu ƙanƙanta.
Cikakken Zane
