SiC substrate P-type 4H/6H-P 3C-N 4inci tare da kauri na 350um Matsayin samarwa Matakin ƙira
Teburin sigar SiC mai inci 4 na nau'in P-type 4H/6H-P 3C-N
4 diamita inci na siliconSubstrate na Carbide (SiC) Ƙayyadewa
| Matsayi | Sifili Samar da MPD Maki (Z) maki) | Tsarin Samarwa na Daidaitacce Maki (P) maki) | Daraja ta Karya (D maki) | ||
| diamita | 99.5 mm~100.0 mm | ||||
| Kauri | 350 μm ± 25 μm | ||||
| Tsarin Wafer | A gefen axis: 2.0°-4.0° zuwa [11]20] ± 0.5° don 4H/6H-P, Oaxis na n:〈111〉± 0.5° don 3C-N | ||||
| Yawan bututun micropipe | 0 cm-2 | ||||
| Juriya | nau'in p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Babban Tsarin Faɗi | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Babban Tsawon Lebur | 32.5 mm ± 2.0 mm | ||||
| Tsawon Lebur na Biyu | 18.0 mm ± 2.0 mm | ||||
| Tsarin Faɗi na Biyu | Fuskar silicon sama: 90° CW. daga Prime flat±5.0° | ||||
| Keɓewa a Gefen | 3 mm | 6 mm | |||
| LTV/TTV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Taurin kai | Yaren mutanen Poland Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Fashewar Gefen Ta Hanyar Haske Mai Tsanani | Babu | Tsawon jimilla ≤ 10 mm, tsawonsa ɗaya ≤ 2 mm | |||
| Faranti na Hex ta Haske Mai Tsanani | Yankin da aka tara ≤0.05% | Yankin da aka tara ≤0.1% | |||
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Babu | Yankin da aka tara≤3% | |||
| Abubuwan da ke tattare da Carbon na gani | Yankin da aka tara ≤0.05% | Yankin da aka tara ≤3% | |||
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | Babu | Tsawon jimla ≤1 × diamita na wafer | |||
| Ƙwayoyin Gefen Suna da Haske Mai Tsanani | Babu wanda aka yarda da faɗin da zurfin ≥0.2mm | An yarda da 5, ≤1 mm kowanne | |||
| Gurɓatar Fuskar Silicon Ta Hanyar Ƙarfi Mai Girma | Babu | ||||
| Marufi | Akwatin Wafer Mai Yawa ko Akwatin Wafer Guda ɗaya | ||||
Bayanan kula:
※Iyakan lahani sun shafi dukkan saman wafer sai dai yankin da aka ware gefen. # Ya kamata a duba ƙyallen a fuskar Si kawai.
Ana amfani da substrate na P-type 4H/6H-P 3C-N 4-inch SiC substrate mai kauri na 350 μm sosai a cikin ci gaban kera na'urorin lantarki da wutar lantarki. Tare da kyakkyawan yanayin zafi, ƙarfin lantarki mai ƙarfi, da juriya mai ƙarfi ga yanayi mai tsauri, wannan substrate ya dace da na'urorin lantarki masu ƙarfi kamar manyan masu sauya wutar lantarki, inverters, da na'urorin RF. Ana amfani da substrate masu matakin samarwa a cikin manyan masana'antu, yana tabbatar da ingantaccen aikin na'ura mai inganci, wanda yake da mahimmanci ga na'urorin lantarki masu ƙarfi da aikace-aikacen mitar. A gefe guda kuma, ana amfani da substrate masu matakin dummy don daidaita tsari, gwajin kayan aiki, da haɓaka samfura, suna taimakawa wajen kula da inganci da daidaiton tsari a cikin samar da semiconductor.
BayaniFa'idodin abubuwan haɗin gwiwa na N-type SiC sun haɗa da
- Babban Tsarin Zafin Jiki: Ingancin watsa zafi yana sa substrate ya dace da amfani da zafi mai yawa da kuma ƙarfin lantarki mai yawa.
- Babban Wutar Lantarki Mai Rushewa: Yana tallafawa aikin ƙarfin lantarki mai ƙarfi, yana tabbatar da aminci a cikin na'urorin lantarki masu ƙarfi da na'urorin RF.
- Juriya ga Muhalli Mai Wuya: Yana da ɗorewa a cikin yanayi mai tsanani kamar yanayin zafi mai yawa da muhallin da ke lalata muhalli, yana tabbatar da aiki mai ɗorewa.
- Daidaiton Samarwa-Mataki: Yana tabbatar da inganci da ingantaccen aiki a manyan masana'antu, wanda ya dace da ci gaba da amfani da wutar lantarki da RF.
- Daraja ta Gwaji: Yana ba da damar daidaita tsari daidai, gwajin kayan aiki, da kuma yin samfuri ba tare da yin illa ga wafers na matakin samarwa ba.
Gabaɗaya, nau'in P-type 4H/6H-P 3C-N SiC mai inci 4 tare da kauri na 350 μm yana ba da fa'idodi masu mahimmanci ga aikace-aikacen lantarki masu aiki mai girma. Babban ƙarfin watsa zafi da ƙarfin lantarki mai lalacewa ya sa ya dace da yanayin zafi mai girma da zafi, yayin da juriyarsa ga yanayi mai tsauri ke tabbatar da dorewa da aminci. Tsarin samar da kayayyaki yana tabbatar da daidaito da daidaito a cikin manyan masana'antun na'urorin lantarki masu ƙarfi da na'urorin RF. A halin yanzu, tsarin samar da kayayyaki yana da mahimmanci don daidaita tsari, gwajin kayan aiki, da kuma yin samfuri, yana tallafawa sarrafa inganci da daidaito a cikin samar da semiconductor. Waɗannan fasalulluka suna sa tsarin samar da kayayyaki na SiC ya zama mai amfani sosai don aikace-aikacen ci gaba.
Cikakken Zane
