SiC substrate P-nau'in 4H/6H-P 3C-N 4inch tare da kauri na 350um Production sa Dummy sa

SiC substrate P-nau'in 4H/6H-P 3C-N 4inch tare da kauri na 350um Production sa Dummy Featured Hoto

Takaitaccen Bayani:

Nau'in P-type 4H/6H-P 3C-N 4-inch SiC substrate, tare da kauri na 350 μm, babban aikin semiconductor abu ne da ake amfani da shi sosai a masana'antar na'urar lantarki. An san shi don ƙayyadaddun yanayin zafi na musamman, babban ƙarfin rushewa, da juriya ga matsananciyar yanayin zafi da lalata muhalli, wannan madaidaicin shine manufa don aikace-aikacen lantarki na lantarki. Ana amfani da kayan aikin samarwa a cikin manyan masana'antu, yana tabbatar da ingantaccen kulawa da ingantaccen aminci a cikin na'urorin lantarki na ci gaba. A halin yanzu, ana amfani da madaidaicin matakin juzu'i don aiwatar da gyara kurakurai, daidaita kayan aiki, da samfuri. Maɗaukakin kaddarorin SiC sun sa ya zama kyakkyawan zaɓi ga na'urorin da ke aiki a cikin yanayin zafi mai ƙarfi, ƙarfin lantarki, da maɗaukakin mitoci, gami da na'urorin wuta da tsarin RF.

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4inch SiC substrate P-type 4H/6H-P 3C-N tebur siga

4 inch diamita SiliconCarbide (SiC) Substrate Ƙayyadaddun bayanai

Daraja			Zero MPD Production Darasi (Z Daraja)	Standard Production Darasi (P Daraja)	Dummy Grade (D Daraja)
Diamita			99.5mm ~ 100.0 mm
Kauri			350 μm ± 25 μm
Wafer Orientation			Kashe axis: 2.0°-4.0°zuwa [112(-)0] ± 0.5° don 4H/6H-P, On axis:〈111〉± 0.5° don 3C-N
Maƙarƙashiya Maɗaukaki			0 cm - 2
Resistivity	p-nau'in 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-nau'in 3C-N		≤0.8 mΩ cm		≤1 m Ωꞏcm
Hanyar Farko ta Flat		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Tsawon Lantarki na Farko			32.5 mm ± 2.0 mm
Tsawon Lantarki na Sakandare			18.0 mm ± 2.0 mm
Gabatarwar Flat na Sakandare			Fuskar Silicon: 90° CW. daga Prime flat±5.0°
Ƙarƙashin Ƙarfi			3 mm ku		6 mm ku
LTV/TTV/Baka/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Tashin hankali			Yaren mutanen Poland Ra≤1 nm
			CMP Ra≤0.2 nm		≤0.5 nm
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara			Babu		Tsayin tarawa ≤ 10 mm, tsayi ɗaya≤2 mm
Hex Plates Ta Babban Haske mai ƙarfi			Tarin yanki ≤0.05%		Tarin yanki ≤0.1%
Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi			Babu		Tarin yanki≤3%
Haɗin Carbon Na gani			Tarin yanki ≤0.05%		Tarin yanki ≤3%
Silicon Surface Scratches By High Intensity Light			Babu		Tsayin tarawa≤1× diamita wafer
Edge Chips High By Intensity Light			Babu wanda aka halatta ≥0.2mm nisa da zurfinsa		5 izini, ≤1 mm kowanne
Gurɓatar Silicon Surface Ta Babban Ƙarfi			Babu
Marufi			Cassette mai yawa-wafer ko kwantena wafer guda ɗaya

Bayanan kula:

※ Iyakoki na lahani sun shafi gaba dayan farfajiyar wafer ban da wurin keɓe gefen. # Ya kamata a duba karce a fuskar Si kawai.

The P-type 4H/6H-P 3C-N 4-inch SiC substrate tare da kauri na 350 μm ana amfani da ko'ina a ci-gaba lantarki da ikon na'urar masana'antu. Tare da ingantacciyar wutar lantarki mai ƙarfi, ƙarfin rushewa mai ƙarfi, da juriya mai ƙarfi ga matsananciyar yanayi, wannan madaidaicin shine manufa don babban aikin lantarki mai ƙarfi kamar maɓalli mai ƙarfi, inverters, da na'urorin RF. Ana amfani da kayan aikin samarwa a cikin manyan masana'antu, tabbatar da abin dogaro, ingantaccen aikin na'urar, wanda ke da mahimmanci ga kayan lantarki da aikace-aikacen mitoci masu yawa. Dummy-grade substrates, a gefe guda, ana amfani da su musamman don daidaita tsari, gwajin kayan aiki, da haɓaka samfuri, suna taimakawa kula da ingancin inganci da daidaiton tsari a cikin samar da semiconductor.

Fa'idodi na nau'in N-type SiC composite substrates sun haɗa da

High thermal Conductivity: Ingancin zafi mai zafi yana sa ƙirar ta zama manufa don aikace-aikacen zafin jiki da ƙarfi.
High Breakdown Voltage: Yana goyan bayan babban ƙarfin aiki, yana tabbatar da aminci a cikin wutar lantarki da na'urorin RF.
Juriya ga Muhalli masu tsanani: Mai ɗorewa a cikin matsanancin yanayi kamar yanayin zafi mai zafi da yanayin lalacewa, yana tabbatar da aiki mai dorewa.
Ƙirƙirar-Madaidaicin Matsayi: Yana tabbatar da inganci mai inganci da ingantaccen aiki a cikin manyan masana'antu, dacewa da ƙarfin ci gaba da aikace-aikacen RF.
Dummy-Grade don Gwaji: Yana ba da damar daidaita daidaitattun tsari, gwajin kayan aiki, da samfuri ba tare da yin lahani ga wafers ɗin samarwa ba.

Gabaɗaya, nau'in P-type 4H/6H-P 3C-N 4-inch SiC substrate tare da kauri na 350 μm yana ba da fa'idodi masu mahimmanci don aikace-aikacen lantarki mai ƙarfi. Matsayinsa mai girma na thermal conductivity da rushewar wutar lantarki ya sa ya zama manufa don babban iko da yanayin zafi, yayin da juriya ga yanayin zafi yana tabbatar da dorewa da aminci. Ƙirƙirar ƙira mai ƙima yana tabbatar da daidaito da daidaiton aiki a cikin manyan masana'anta na lantarki da na'urorin RF. A halin yanzu, juzu'i-grade substrate yana da mahimmanci don daidaita tsari, gwajin kayan aiki, da samfuri, tallafawa sarrafa inganci da daidaito a cikin samar da semiconductor. Waɗannan fasalulluka suna sa abubuwan SiC su zama masu dacewa sosai don aikace-aikacen ci-gaba.