Kayayyaki
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SiC substrate P-type 4H/6H-P 3C-N 4inci tare da kauri na 350um Matsayin samarwa Matakin ƙira
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Wafer SiC mai inci 6 Sifili mai matakin MPD na samarwa.
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Wafer SiC na nau'in P-type 4H/6H-P 3C-N Kauri inci 6 350 μm tare da Babban Tsarin Lebur
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Hannun yumbu na Aluminum na musamman na hannun yumbu na roba
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Al2O3 99.999% sapphire ruwan wukake na musamman mai haske mai jure lalacewa 38 × 4.5 × 0.3mmt
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Al2O3 99.999% sapphire ruwan wukake na musamman mai haske mai jure lalacewa 38 × 4.5 × 0.3mmt
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Lilac YAG raw kayan foda shunayya a cikin hannun jari
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Tsarin TVG akan wafer ɗin sapphire BF33 mai siffar gilashi
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Nau'in Substrate Guda ɗaya na Crystal Silicon Wafer Si N/P Wafer na Silicon Carbide na zaɓi
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Substrates na N-Type SiC Dia6inch Babban monocrystalline mai inganci da ƙarancin substrate
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SiC mai rufi da sinadari mai hade da sinadari
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Substrates na SiC Composite Dia2inch 4inch 6inch 8inch HPSI