P-nau'in SiC wafer 4H/6H-P 3C-N 6inch kauri 350 μm tare da Farko Flat Orientation

P-nau'in SiC wafer 4H/6H-P 3C-N 6inch kauri 350 μm tare da Fitar da Hoto na Farko Flat

Takaitaccen Bayani:

P-type SiC wafer, 4H/6H-P 3C-N, wani 6-inch semiconductor abu tare da kauri na 350 μm da primary lebur fuskantarwa, tsara don ci-gaba aikace-aikace lantarki. An san shi don haɓakar yanayin zafi mai girma, babban ƙarfin rushewa, da juriya ga matsanancin yanayin zafi da lalata muhalli, wannan wafer ya dace da na'urorin lantarki masu inganci. Doping na nau'in P yana gabatar da ramuka azaman masu ɗaukar kaya na farko, yana mai da shi manufa don kayan lantarki da aikace-aikacen RF. Tsarinsa mai ƙarfi yana tabbatar da kwanciyar hankali a ƙarƙashin ƙarfin ƙarfin lantarki da yanayi mai girma, yana sa ya dace da na'urorin wutar lantarki, na'urorin lantarki masu zafi, da kuma ƙarfin ƙarfin ƙarfin lantarki. Madaidaicin shimfidar wuri na farko yana tabbatar da daidaitaccen jeri a cikin tsarin masana'anta, yana ba da daidaito cikin ƙirƙira na'urar.

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Specification4H/6H-P Nau'in SiC Composite Substrates gama gari tebur siga

6 inch diamita Silicon Carbide (SiC) Substrate Ƙayyadaddun bayanai

Daraja			Zero MPD ProductionDarasi (Z Daraja)	Standard ProductionDarasi (P Daraja)	Dummy Grade (D Daraja)
Diamita			145.5mm ~ 150.0 mm
Kauri			350 μm ± 25 μm
Wafer Orientation			-Offaxis: 2.0 ° -4.0 ° zuwa [1120] ± 0.5 ° don 4H/6H-P, A kan axis: 〈111〉± 0.5° don 3C-N
Maƙarƙashiya Maɗaukaki			0 cm - 2
Resistivity	p-nau'in 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-nau'in 3C-N		≤0.8 mΩ cm		≤1 m Ωꞏcm
Hanyar Farko ta Flat		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Tsawon Lantarki na Farko			32.5 mm ± 2.0 mm
Tsawon Lantarki na Sakandare			18.0 mm ± 2.0 mm
Gabatarwar Flat na Sakandare			Fuskar Silicon: 90° CW. daga Firayim lebur ± 5.0°
Ƙarƙashin Ƙarfi			3 mm ku		6 mm ku
LTV/TTV/Baka/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Tashin hankali			Yaren mutanen Poland Ra≤1 nm
			CMP Ra≤0.2 nm		≤0.5 nm
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara			Babu		Tsayin tarawa ≤ 10 mm, tsayi ɗaya≤2 mm
Hex Plates Ta Babban Haske mai ƙarfi			Tarin yanki ≤0.05%		Tarin yanki ≤0.1%
Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi			Babu		Tarin yanki≤3%
Haɗin Carbon Na gani			Tarin yanki ≤0.05%		Tarin yanki ≤3%
Silicon Surface Scratches By High Intensity Light			Babu		Tsayin tarawa≤1× diamita wafer
Edge Chips High By Intensity Light			Babu wanda aka halatta ≥0.2mm nisa da zurfinsa		5 izini, ≤1 mm kowanne
Gurɓatar Silicon Surface Ta Babban Ƙarfi			Babu
Marufi			Cassette mai yawa-wafer ko kwantena wafer guda ɗaya

Bayanan kula:

※ Iyakoki na lahani sun shafi gaba dayan farfajiyar wafer ban da yankin keɓe gefen. # Ya kamata a duba karce akan Si face o

P-type SiC wafer, 4H/6H-P 3C-N, tare da girman 6-inch da kauri 350 μm, yana taka muhimmiyar rawa a cikin samar da masana'antu na manyan kayan lantarki. Kyawawan yanayin zafinsa da ƙarfin rushewar wutar lantarki ya sa ya dace don masana'anta kamar su masu sauya wuta, diodes, da transistor da ake amfani da su a cikin yanayi masu zafi kamar motocin lantarki, grids, da tsarin makamashi mai sabuntawa. Ƙarfin wafer don yin aiki da kyau a cikin yanayi mara kyau yana tabbatar da ingantaccen aiki a aikace-aikacen masana'antu da ke buƙatar ƙarfin ƙarfin ƙarfi da ƙarfin kuzari. Bugu da ƙari, firamarensa na firamare yana taimakawa cikin daidaitaccen jeri yayin ƙirƙira na'urar, haɓaka haɓakar samarwa da daidaiton samfur.

Fa'idodin nau'in nau'in SiC mai haɗaka sun haɗa da

High thermal Conductivity: P-type SiC wafers yadda ya kamata ya watsar da zafi, yana sa su dace don aikace-aikacen zafi mai zafi.
High Breakdown Voltage: Mai iya jurewa babban ƙarfin lantarki, tabbatar da aminci a cikin wutar lantarki da na'urori masu ƙarfin lantarki.
Juriya ga Muhalli masu tsanani: Kyakkyawan karko a cikin matsanancin yanayi, irin su yanayin zafi mai zafi da lalata yanayi.
Ingantacciyar Canjin Wuta: Tsarin doping na nau'in P yana sauƙaƙe ingantaccen sarrafa wutar lantarki, yana sa wafer ya dace da tsarin canjin makamashi.
Hanyar Farko ta Flat: Yana tabbatar da daidaitattun daidaito yayin samarwa, inganta daidaiton na'urar da daidaito.
Tsarin Bakin ciki (350 μm): Mafi kyawun kauri na wafer yana goyan bayan haɗin kai zuwa na'urorin lantarki masu ƙarancin sarari.

Gabaɗaya, nau'in P-type SiC wafer, 4H / 6H-P 3C-N, yana ba da fa'idodi da yawa waɗanda suka sa ya dace sosai don aikace-aikacen masana'antu da na lantarki. Babban ƙarfin wutar lantarki da rushewar wutar lantarki yana ba da damar ingantaccen aiki a cikin yanayin zafi mai ƙarfi da ƙarfin lantarki, yayin da juriya ga yanayin ƙaƙƙarfan yanayi yana tabbatar da dorewa. Doping na nau'in P-nau'in yana ba da damar ingantacciyar canjin wutar lantarki, yana mai da shi manufa don tsarin lantarki da makamashi. Bugu da ƙari, matakin firamare na wafer yana tabbatar da daidaitaccen jeri yayin aikin masana'anta, yana haɓaka daidaiton samarwa. Tare da kauri na 350 μm, ya dace sosai don haɗawa cikin ci gaba, ƙananan na'urori.