LT Lithium Tantalate (LiTaO3) Crystal 2in/3in/4in/6in Orientaiton Y-42°/36°/108° Kauri 250-500um

Takaitaccen Bayani:

Wafers na LiTaO₃ suna wakiltar tsarin kayan piezoelectric da ferroelectric masu mahimmanci, suna nuna ma'aunin piezoelectric na musamman, kwanciyar hankali na zafi, da halayen gani, wanda hakan ya sa su zama dole ga matatun ruwa na saman acoustic wave (SAW), masu kunna sauti na babban acoustic wave (BAW), masu daidaita haske, da na'urorin gano infrared. XKH ta ƙware a cikin R&D da samarwa na LiTaO₃ wafer masu inganci, ta amfani da ci gaban kristal na Czochralski (CZ) da hanyoyin epitaxy na ruwa (LPE) don tabbatar da daidaiton kristal tare da ƙarancin lahani <100/cm².

XKH tana samar da wafers na LiTaO₃ inci 3, inci 4, da inci 6 masu launuka daban-daban (yanke-yanke na X, yanke-Y, yanke-Z), suna tallafawa maganin doping na musamman (Mg, Zn) da kuma maganin poling don biyan takamaiman buƙatun aikace-aikacen. Madaidaitan dielectric na kayan (ε~40-50), ma'aunin piezoelectric (d₃₃~8-10 pC/N), da zafin jiki na Curie (~600°C) sun kafa LiTaO₃ a matsayin madadin da aka fi so don matattara masu yawan mita da na'urori masu auna daidaito.

Masana'antarmu da aka haɗa a tsaye tana rufe haɓakar lu'ulu'u, wafering, polishing, da kuma adana siraran fim, tare da ƙarfin samarwa na wata-wata ya wuce wafers 3,000 don hidimar sadarwa ta 5G, kayan lantarki na masu amfani, photonics, da masana'antar tsaro. Muna ba da cikakken shawarwari na fasaha, siffanta samfura, da ayyukan ƙira masu ƙarancin girma don samar da ingantattun hanyoyin magance matsalolin LiTaO₃.

Aika mana imel

Siffofi

Sigogi na fasaha

Suna	LiTaO3 mai ƙarfin gani	Matakan teburin sauti LiTaO3
Axial	Yanke Z + / - 0.2 °	Yanke 36 ° Y / Yanke 42 ° Y / Yanke X(+ / - 0.2 °)
diamita	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Jirgin sama na Datatum	22mm + / - 2mm	22mm +/-2mm32mm +/-2mm
Kauri	500um +/-5mm1000um +/-5mm	500um +/-20mm350um +/-20mm
TTV	≤ 10um	≤ 10um
Zafin jiki na Curie	605 °C + / - 0.7 °C (Hanyar DTA)	605 °C + / -3 °C (Hanyar DTA
Ingancin saman	gogewa mai gefe biyu	gogewa mai gefe biyu
Gefunan Chamfered	zagaye na gefe	zagaye na gefe

Muhimman Halaye

1. Tsarin Crystal da Aikin Lantarki

· Kwanciyar hankali ta lu'ulu'u: rinjayen nau'in polytype 4H-SiC 100%, babu wani abu da ya haɗa da lu'ulu'u masu yawa (misali, 6H/15R), tare da lanƙwasa mai jujjuyawar XRD mai cikakken faɗi a rabin matsakaicin (FWHM) ≤32.7 arcsec.
· Babban Motsi Mai Jigilar Kaya: Motsi na lantarki na 5,400 cm²/V·s (4H-SiC) da kuma motsi na rami na 380 cm²/V·s, wanda ke ba da damar ƙirar na'urori masu yawan mita.
Taurin Haske: Yana jure wa hasken neutron 1 MeV tare da matsakaicin lalacewar motsi na 1×10¹⁵ n/cm², wanda ya dace da aikace-aikacen sararin samaniya da makaman nukiliya.

2.Halayen zafi da na inji

· Na'urar auna zafin jiki ta musamman: 4.9 W/cm·K (4H-SiC), sau uku na silicon, wanda ke tallafawa aiki sama da 200°C.
· Ƙarancin Faɗaɗawar Zafi: CTE na 4.0×10⁻⁶/K (25–1000°C), yana tabbatar da dacewa da marufi da aka yi da silicon da kuma rage damuwa ta zafi.

3. Daidaiton Kulawa da Sarrafa Lalacewa
;
· Yawan bututun micropipe: <0.3 cm⁻² (wafers inci 8), yawan tarkace <1,000 cm⁻² (an tabbatar ta hanyar etching na KOH).
· Ingancin Sama: An goge CMP zuwa Ra <0.2 nm, yana biyan buƙatun daidaitaccen matakin lithography na EUV.

Manhajoji Masu Mahimmanci

Yanki	Yanayin Aikace-aikace	Fa'idodin Fasaha
Sadarwar gani	Na'urorin laser 100G/400G, na'urorin haɗin silicon photonics	Tsarin iri na InP yana ba da damar bandgap kai tsaye (1.34 eV) da heteroepitaxy na tushen Si, yana rage asarar haɗin ido.
Sabbin Motocin Makamashi	Masu canza wutar lantarki masu ƙarfin lantarki 800V, masu caji a cikin jirgin (OBC)	Substrates 4H-SiC suna jure wa fiye da V1,200, suna rage asarar watsawa da kashi 50% da kuma girman tsarin da kashi 40%.
Sadarwa ta 5G	Na'urorin RF masu girman milimita (PA/LNA), amplifiers na tashar tushe	Ƙananan SiC substrates (resistive >10⁵ Ω·cm) suna ba da damar haɗakarwa mai yawan mita (60 GHz+).
Kayan aikin masana'antu	Na'urori masu auna zafin jiki mai yawa, na'urorin canza wutar lantarki, na'urorin sa ido kan na'urorin nukiliya	Tsarin iri na InSb (bandgap na 0.17 eV) yana ba da ƙarfin maganadisu har zuwa 300% @ 10 T.

Wafers na LiTaO₃ - Muhimman Halaye

1. Babban Aikin Piezoelectric

· Babban ma'aunin piezoelectric (d₃₃~8-10 pC/N, K²~0.5%) yana ba da damar na'urorin SAW/BAW masu yawan mita tare da asarar saka <1.5dB don matatun RF na 5G

· Kyakkyawan haɗin lantarki yana tallafawa ƙirar matattara mai faɗi (≥5%) don aikace-aikacen sub-6GHz da mmWave

2. Kayayyakin gani

· Bayyanar da hanyoyin sadarwa (>70% watsawa daga 400-5000nm) ga masu daidaita hanyoyin lantarki masu cimma bandwidth sama da 40GHz

· Ƙarfin ƙarfin gani mara layi (χ⁽²⁾~30pm/V) yana sauƙaƙa ingantaccen samar da harmonic na biyu (SHG) a cikin tsarin laser

3. Kwanciyar Hankali a Muhalli

· Zafin Curie mai yawa (600°C) yana kiyaye amsawar piezoelectric a cikin yanayin mota (-40°C zuwa 150°C)

· Rashin daidaiton sinadarai akan acid/alkalies (pH1-13) yana tabbatar da aminci a aikace-aikacen firikwensin masana'antu

4. Ƙarfin Keɓancewa

· Injiniyan Gabatarwa: Yanke-X (51°), Yanke-Y (0°), Yanke-Z (36°) don amsoshin piezoelectric da aka ƙera

· Zaɓuɓɓukan yin amfani da maganin hana shan ƙwayoyi: Maganin hana shan ƙwayoyi (juriya ga lalacewar gani), maganin hana shan ƙwayoyi (ƙara yawan shan ƙwayoyi)

· Kammalawar saman: Gyaran Epitaxial-ready polishing (Ra<0.5nm), ITO/Au metallisation

Wafers na LiTaO₃ - Babban Amfani

1. Modules na Gaba-gaba na RF

· Matatun 5G NR SAW (Band n77/n79) tare da ma'aunin zafin jiki na mita (TCF) <|-15ppm/°C|

· Maɓallan BAW masu faɗi da yawa don WiFi 6E/7 (5.925-7.125GHz)

2. Haɗaɗɗen Photonics

· Ma'aikatan gyaran fuska masu sauri na Mach-Zehnder (>100Gbps) don sadarwa mai haɗin kai

Na'urorin gano infrared na QWIP tare da tsawon tsayin daka da za a iya gyarawa daga 3-14μm

3. Kayan Lantarki na Motoci

· Na'urori masu auna wurin ajiye motoci na Ultrasonic waɗanda ke da yawan aiki sama da 200kHz

· Masu canza wutar lantarki na TPMS waɗanda ke rayuwa a yanayin zafi -40°C zuwa 125°C

4. Tsarin Tsaro

· Matatun mai karɓar EW tare da ƙin amincewa da 60dB daga waje

· Tagogi masu neman makamai masu linzami suna watsa hasken MWIR 3-5μm

5. Fasaha Mai tasowa

· Na'urorin canza yanayin gani na gani don canzawa zuwa microwave zuwa na gani

· Shirye-shiryen PMUT don hoton duban dan tayi na likita (> ƙudurin 20MHz)

Wafers na LiTaO₃ - Ayyukan XKH

1. Gudanar da Sarkar Samar da Kayayyaki

· Sarrafa Boule-to-wafer tare da lokacin jagoranci na makonni 4 don ƙayyadaddun bayanai na yau da kullun

· Samar da kayayyaki masu inganci da inganci yana samar da fa'idar farashi 10-15% idan aka kwatanta da masu fafatawa

2. Magani na Musamman

· Wafering na musamman ga al'ada: 36°±0.5° Y-yanke don ingantaccen aikin SAW

· Abubuwan da aka yi amfani da su wajen allurar: MgO2 (5mol%) don amfani da su wajen allurar ido

Ayyukan ƙara ƙarfe: Tsarin lantarki na Cr/Au (100/1000Å)

3. Tallafin Fasaha

· Siffanta kayan aiki: Lanƙwasa masu jujjuyawar XRD (FWHM <0.01°), nazarin saman AFM

· Kwaikwayon na'ura: Tsarin FEM don inganta ƙirar matattarar SAW

Kammalawa

Wafers na LiTaO₃ suna ci gaba da ba da damar ci gaban fasaha a duk faɗin sadarwa ta RF, haɗakar photonics, da na'urori masu auna yanayi. Ƙwarewar XKH ta kayan aiki, daidaiton kera kayayyaki, da tallafin injiniyan aikace-aikace suna taimaka wa abokan ciniki shawo kan ƙalubalen ƙira a cikin tsarin lantarki na zamani.