LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Kauri 250-500um

Takaitaccen Bayani:

LiTaO₃ wafers suna wakiltar tsarin kayan lantarki mai mahimmanci da tsarin kayan ferroelectric, suna nuna keɓaɓɓen haɗin gwiwar piezoelectric, kwanciyar hankali na thermal, da kaddarorin gani, yana sanya su zama makawa don matattarar sautin murya (SAW), masu haɓaka sautin ƙararrawa (BAW), masu daidaitawa na gani, da masu gano infrared. XKH ya ƙware a cikin babban ingancin LiTaO₃ wafer R&D da samarwa, yana amfani da ci gaba na Czochralski (CZ) kristal girma da matakan ruwa lokaci epitaxy (LPE) don tabbatar da ingantaccen lu'ulu'u tare da ƙarancin lahani <100/cm².

XKH yana ba da 3-inch, 4-inch, da 6-inch LiTaO₃ wafers tare da madaidaicin crystallographic (X-cut, Y-cut, Z-cut), yana tallafawa doping na musamman (Mg, Zn) da jiyya na poling don saduwa da takamaiman buƙatun aikace-aikacen. The abu ta dielectric akai (ε ~ 40-50), piezoelectric coefficient (d₃₃ ~ 8-10 pC/N), da Curie zafin jiki (~ 600°C) kafa LiTaO₃ a matsayin da aka fi so substrate ga high-mita tace da daidaici na'urori masu auna sigina.

Haɗe-haɗen masana'antar mu a tsaye yana rufe haɓakar kristal, wafering, gogewa, da sanya fim mai bakin ciki, tare da ƙarfin samarwa na wata-wata wanda ya zarce wafers 3,000 don hidimar sadarwar 5G, kayan lantarki na mabukaci, photonics, da masana'antar tsaro. Muna ba da cikakkiyar tuntuɓar fasaha, ƙirar samfuri, da sabis na ƙima mai ƙarancin ƙima don isar da ingantattun hanyoyin LiTaO₃.

Aika mana imel

Siffofin

Siffofin fasaha

Suna	LiTaO3	Matsayin tebur mai sauti LiTaO3
Axial	Z yanke +/- 0.2 °	36 ° Y yanke / 42 ° Y yanke / yanke(+ / - 0.2 °)
Diamita	76.2mm + / - 0.3mm /100± 0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150± 0.5mm
Datum jirgin sama	22mm +/- 2mm	22mm +/-2mm32mm +/-2mm
Kauri	500um +/-5mm1000um +/-5mm	500um +/-20mm350um +/-20mm
TTV	≤10 ku	≤10 ku
Curie zafin jiki	605°C +/- 0.7°C (Hanyar DTA)	605°C +/-3°C (Hanyar DTA
ingancin saman	goge fuska biyu	goge fuska biyu
Yanke gefuna	zagaye gefen	zagaye gefen

Mabuɗin Halaye

1.Crystal Structure da Electrical Performance

· Ƙarfafawar Crystallographic: 100% 4H-SiC polytype rinjaye, sifili multicrystalline inclusions (misali, 6H/15R), tare da XRD rocking kwana cika-nisa a rabin-mafi girma (FWHM) ≤32.7 arcsec.
Motsi mai ɗaukar nauyi: Motsawar lantarki na 5,400 cm²/V·s (4H-SiC) da motsin rami na 380 cm²/V·s, yana ba da damar ƙirar na'ura mai tsayi.
Taurin Radiation: Yana jurewa 1 MeV neutron iska mai guba tare da madaidaicin lalacewa na 1 × 10¹⁵ n/cm², manufa don aikace-aikacen sararin samaniya da makaman nukiliya.

2.Thermal da Mechanical Properties

Na Musamman Thermal Conductivity: 4.9 W/cm · K (4H-SiC), sau uku na silicon, goyon bayan aiki sama da 200°C.
Ƙwararren Ƙwararren Ƙwararrun Ƙwararru: CTE na 4.0 × 10⁻⁶ / K (25-1000 ° C), yana tabbatar da dacewa tare da marufi na tushen silicon da rage yawan damuwa na thermal.

3.Lalacewar Gudanarwa da Daidaitawa
;
Yawan bututu: <0.3 cm⁻² (wafers 8-inch), ƙarancin rarrabuwa <1,000 cm⁻² (an tabbatar ta hanyar KOH etching).
Ingancin saman: CMP-gyara zuwa Ra <0.2 nm, saduwa da buƙatun flatness na darajar EUV.

Maɓallin Aikace-aikace

Domain	Yanayin aikace-aikace	Amfanin Fasaha
Hanyoyin sadarwa na gani	100G/400G Laser, silicon photonics matasan kayayyaki	InP iri substrates suna ba da damar bandgap kai tsaye (1.34 eV) da heteroepitax na tushen Si, yana rage asarar haɗaɗɗun gani.
Sabbin Motocin Makamashi	800V high-voltage inverters, onboard caja (OBC)	4H-SiC substrates jure> 1,200 V, rage conduction asarar da 50% da tsarin girma da 40%.
5G Sadarwa	Millimeter-wave RF na'urorin (PA/LNA), ma'aunin wutar lantarki na tushe	Semi-insulating SiC substrates (resistivity> 10⁵ Ω·cm) yana ba da damar haɗin kai mai tsayi (60 GHz+).
Kayayyakin Masana'antu	Na'urori masu auna zafin jiki, masu canza wuta na yanzu, na'urori masu sarrafa makamashin nukiliya	InSb iri substrates (0.17 eV bandgap) suna isar da hankalin maganadisu har zuwa 300%@10 T.

LiTaO₃ Wafers - Maɓallin Halayen

1. Mafi Girma Ayyukan Piezoelectric

Babban coefficients na piezoelectric (d₃₃ ~ 8-10 pC/N, K² ~ 0.5%) yana ba da damar manyan na'urorin SAW/BAW masu girma tare da asarar shigarwa <1.5dB don matattarar 5G RF

* Kyakkyawan haɗin lantarki na lantarki yana goyan bayan ƙira mai faɗi mai faɗi (≥5%) ƙirar tace don aikace-aikacen sub-6GHz da mmWave

2. Kayayyakin gani

· Bayyanar watsa labarai (> 70% watsa daga 400-5000nm) don masu amfani da na'urorin lantarki da ke cimma> 40GHz bandwidth

· Ƙarfi mai sauƙi na gani mara kyau (χ⁽²⁾ ~ 30pm/V) yana sauƙaƙe tsararrun jituwa na biyu (SHG) a cikin tsarin laser

3. Zaman Lafiyar Muhalli

Babban zafin jiki na Curie (600°C) yana kiyaye amsawar piezoelectric a cikin yanayin mota-40°C zuwa 150°C

Inertness na sinadarai a kan acid/alkalies (pH1-13) yana tabbatar da dogaro a aikace-aikacen firikwensin masana'antu

4. Ƙimar Ƙarfafawa

Injiniyan daidaitawa: X-cut (51°), Y-cut (0°), yanke-Z (36°) don keɓancewar martanin piezoelectric

Zaɓuɓɓukan Doping: Mg-doped (juriya na lalacewar gani), Zn-doped (ingantattun d₃₃)

Yana gamawa: Epitaxial-shirya gogewa (Ra<0.5nm), ITO/au ƙarfe

LiTaO₃ Wafers - Aikace-aikace na Farko

1. Modules na gaba na RF

· 5G NR SAW tacewa (Band n77/n79) tare da yawan zafin jiki na mitar (TCF) <|-15ppm/°C|

BAW resonators mai fa'ida mai girman gaske don WiFi 6E/7 (5.925-7.125GHz)

2. Hadin gwiwar Photonics

Mach-Zehnder modulators masu saurin sauri (> 100Gbps) don sadarwa mai daidaituwa

QWIP infrared detectors tare da yanke raƙuman raƙuman raƙuman ruwa daga 3-14μm

3. Kayan Lantarki na Mota

· Ultrasonic parking na'urori masu auna sigina tare da> 200kHz aiki mita

TPMS piezoelectric transducers tsira -40°C zuwa 125°C hawan keke na thermal

4. Tsarin Tsaro

Tace mai karɓar EW tare da> 60dB kin amincewa da banda-band

· Mai neman makami mai linzami IR windows masu watsa 3-5μm MWIR radiation

5. Fasaha masu tasowa

· Na'urori masu jujjuya ƙididdiga na gani don jujjuyawar microwave-zuwa na gani

Tsarin PMUT don hoton duban dan tayi na likita (> ƙudurin 20MHz)

LiTaO₃ Wafers - Ayyukan XKH

1. Gudanar da Sarkar Supply

· Gudanar da Boule-to-wafer tare da lokacin jagorar mako 4 don daidaitattun ƙayyadaddun bayanai

· Ingantattun kayan samarwa yana ba da fa'idar farashin 10-15% tare da masu fafatawa

2. Magani na Musamman

Wafering na musamman: 36°±0.5° Y-yanke don ingantaccen aikin SAW

Abubuwan da aka yi amfani da su: MgO (5mol%) doping don aikace-aikacen gani

Sabis na ƙarfe: Cr/Au (100/1000Å) ƙirar lantarki

3. Tallafin Fasaha

Halaye na kayan abu: XRD girgiza masu lankwasa (FWHM <0.01°), nazarin saman AFM

· Kwaikwayo na na'ura: FEM samfuri don inganta ƙirar tace tace SAW

Kammalawa

LiTaO₃ wafers suna ci gaba da ba da damar ci gaban fasaha a cikin hanyoyin sadarwa na RF, haɗaɗɗen hotunan hoto, da na'urori masu auna yanayi. Ƙwarewar kayan aiki na XKH, daidaiton masana'antu, da tallafin injiniya na aikace-aikacen suna taimaka wa abokan ciniki shawo kan ƙalubalen ƙira a cikin tsarin lantarki na gaba.