LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp don 5G/6G Sadarwa

Takaitaccen Bayani:

LiTaO3 Wafer (lithium tantalate wafer), abu mai mahimmanci a cikin semiconductors na ƙarni na uku da optoelectronics, yana ba da damar yanayin zafi mai girma na Curie (610 ° C), kewayon fayyace (0.4-5.0 μm), maɗaukakin piezoelectric coefficient (d33> 1,500 pC/N), da ƙarancin haɓakar wutar lantarki 2. Haɗin kai na photonic, da na'urorin ƙididdiga. Yin amfani da fasahohin ƙirƙira na ci gaba kamar sufurin tururi na jiki (PVT) da jigilar sinadarai (CVD), XKH suna samar da X/Y/Z-cut, 42°Y-cut, da PPLT na lokaci-lokaci a cikin nau'ikan 2-8-inch, waɗanda ke nuna ƙarancin ƙasa (Ra) <0.5 nm da ƙarancin micropipe.1 cm. Ayyukanmu sun haɗa da Fe doping, rage sinadarai, da Smart-Cut haɗe-haɗe iri-iri, da magance manyan ayyuka masu mahimmanci na gani, masu gano infrared, da maɓuɓɓugan haske. Wannan kayan yana haifar da ci gaba a cikin ƙarami, babban aiki mai ƙarfi, da kwanciyar hankali na thermal, yana haɓaka maye gurbin gida a cikin fasaha masu mahimmanci.

Aika mana imel

Siffofin

Siffofin fasaha

Suna	LiTaO3	Matsayin tebur mai sauti LiTaO3
Axial	Z yanke +/- 0.2 °	36 ° Y yanke / 42 ° Y yanke / yanke (+ / - 0.2 °)
Diamita	76.2mm + / - 0.3mm / 100± 0.2mm	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150± 0.5mm
Datum jirgin sama	22mm +/- 2mm	22mm +/-2mm 32mm +/-2mm
Kauri	500um +/-5mm 1000um +/-5mm	500um +/-20mm 350um +/-20mm
TTV	≤10 ku	≤10 ku
Curie zafin jiki	605°C +/- 0.7°C (Hanyar DTA)	605°C +/-3°C (Hanyar DTA
ingancin saman	goge fuska biyu	goge fuska biyu
Yanke gefuna	zagaye gefen	zagaye gefen

Mabuɗin Halaye

1.Electrical and Optical Performance
· Electro-Optic Coefficient: r33 ya kai 30 pm/V (X-cut), 1.5 × sama da LiNbO3, yana ba da damar ultra-wideband electro-optic modulation (> 40 GHz bandwidth).
Bambance-bambancen Amsa: Kewayon watsawa 0.4-5.0 μm (kauri 8 mm), tare da gefen sha ultraviolet ƙasa da 280 nm, manufa don lasers UV da na'urorin dige ƙididdigewa.
Low Pyroelectric Coefficient: dP/dT = 3.5×10⁻ C/(m²·K), yana tabbatar da kwanciyar hankali a cikin firikwensin infrared mai zafin jiki.

2. Thermal da Mechanical Properties
· Babban Haɓakawa: 4.6 W/m · K (yanke X), sau huɗu na ma'adini, ci gaba -200-500 ° C hawan keke na thermal.
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙira: CTE = 4.1 × 10⁻⁶ / K (25-1000 ° C), wanda ya dace da marufi na silicon don rage yawan damuwa na thermal.
3. Lalacewar Gudanarwa da Gudanar da Daidaitawa
Yawan bututu: <0.1 cm⁻² (wafers 8-inch), ƙarancin rarrabuwa <500 cm⁻² (an tabbatar ta hanyar KOH etching).
Ingancin saman: CMP-gyara zuwa Ra <0.5 nm, saduwa da buƙatun flatness na darajar EUV.

Maɓallin Aikace-aikace

Domain	Yanayin aikace-aikace	Amfanin Fasaha
Hanyoyin sadarwa na gani	100G/400G DWDM Laser, silicon photonics matasan kayayyaki	LiTaO3 wafer's faffadan watsa yanayin watsawa da ƙarancin raƙuman raƙuman ruwa (α <0.1 dB/cm) yana ba da damar fadada C-band.
5G/6G Sadarwar Sadarwa	SAW masu tacewa (1.8-3.5 GHz), matattarar BAW-SMR	42°Y-yanke wafers sun cimma Kt²> 15%, suna isar da ƙarancin sakawa (<1.5 dB) da babban kashewa (> 30 dB).
Abubuwan da aka bayar na Quantum Technologies	Masu gano hoto guda ɗaya, maɓuɓɓugan jujjuyawar ƙasa	Babban ƙididdiga marasa kan layi (χ(2)=40 pm/V) da ƙarancin ƙididdiga masu duhu (<100 ƙididdiga/s) suna haɓaka amincin adadi.
Sensing Masana'antu	Na'urori masu auna zafin jiki mai zafi, masu canza wuta na yanzu	Amsar piezoelectric na LiTaO3 wafer (g33>20 mV/m) da juriya mai zafi (> 400°C) sun dace da matsanancin yanayi.

Ayyukan XKH

1.Custom Wafer Fabrication

Girma da Yanke: 2-8-inch wafers tare da X/Y/Z-cut, 42°Y-cut, da al'ada angular cuts (± 0.01° haƙuri).

Ikon Doping: Fe, Mg doping ta hanyar Czochralski (kewayon tattarawa 10¹⁶–10¹⁹ cm⁻³) don haɓaka ƙimar lantarki-optic da kwanciyar hankali na thermal.

2.Advanced Process Technologies
;
Periodic Poling (PPLT): Fasahar Smart-Cut don wafers na LTOI, cimma daidaitattun lokacin yanki na ± 10 nm da juzu'i-lokaci-matched (QPM).

Haɗe-haɗe-haɗe-haɗe: Si-based LiTaO3 composite wafers (POI) tare da kauri iko (300-600 nm) da thermal conductivity har zuwa 8.78 W / m · K don high-mita SAW tace.

3.Tsarin Gudanar da Ingantacce
;
Gwajin Ƙarshe zuwa Ƙarshen: Raman spectroscopy (tabbacin polytype), XRD (crystallinity), AFM (surface morphology), da gwajin daidaituwa na gani (Δn <5 × 10⁻).

4.Global Supply Chain Support
;
Ƙarfin samarwa: Fitarwa na wata-wata> wafers 5,000 (8-inch: 70%), tare da isar da gaggawa na sa'o'i 48.

· Sadarwar Sadarwa: Rufewa a Turai, Arewacin Amurka, da Asiya-Pacific ta hanyar jigilar iska / teku tare da marufi mai sarrafa zafin jiki.