Hanyar CVD don samar da kayan albarkatun ƙasa na SiC masu tsarki a cikin tanderun haɗakar silicon carbide a 1600℃

Takaitaccen Bayani:

Tanderu mai haɗa silicon carbide (SiC) (CVD). Yana amfani da fasahar Kemikal Vapor Deposition (CVD) zuwa ga tushen silicon ₄ (misali SiH₄, SiCl₄) a cikin yanayin zafi mai yawa inda suke amsawa ga tushen carbon (misali C₃H₈, CH₄). Na'ura mai mahimmanci don haɓaka lu'ulu'u masu ƙarfi na silicon carbide akan substrate (iri na graphite ko SiC). Ana amfani da fasahar galibi don shirya substrate na lu'ulu'u guda ɗaya na SiC (4H/6H-SiC), wanda shine babban kayan aikin sarrafawa don kera semiconductor mai ƙarfi (kamar MOSFET, SBD).

Aika mana imel

Siffofi

Ka'idar aiki:

1. Samar da na'urar da ke tantance sinadaran da ke cikin na'urar. Ana gauraya iskar gas ta silicon (misali SiH₄) da kuma iskar carbon (misali C₃H₈) a daidai gwargwado sannan a zuba su a cikin dakin amsawa.

2. Rushewar zafin jiki mai yawa: A yanayin zafi mai yawa na 1500~2300℃, rushewar iskar gas yana haifar da ƙwayoyin Si da C masu aiki.

3. Haɗakar saman: Ana ajiye ƙwayoyin Si da C a saman substrate don samar da layin lu'ulu'u na SiC.

4. Girman lu'ulu'u: Ta hanyar sarrafa yanayin zafi, kwararar iskar gas da matsin lamba, don cimma ci gaban alkibla tare da axis c ko axis a.

Maɓallan mahimmanci:

· Zafin jiki: 1600~2200℃ (>2000℃ don 4H-SiC)

· Matsi: 50~200mbar (ƙarancin matsin lamba don rage iskar gas)

· Rabon iskar gas: Si/C≈1.0~1.2 (don guje wa lahani na haɓaka Si ko C)

Babban fasali:

(1) Ingancin lu'ulu'u
Ƙananan lahani: yawan microtubule < 0.5cm ⁻², yawan tarwatsewa < 10⁴ cm⁻².

Sarrafa nau'in polycrystalline: zai iya girma 4H-SiC (babban tsari), 6H-SiC, 3C-SiC da sauran nau'ikan lu'ulu'u.

(2) Aikin kayan aiki
Matsakaicin kwanciyar hankali na zafin jiki: dumama graphite ko dumama juriya, zafin jiki> 2300℃.

Kula da daidaito: canjin zafin jiki ±5℃, ƙimar girma 10~50μm/h.

Tsarin iskar gas: Mai auna yawan kwararar ruwa mai inganci (MFC), tsarkin iskar gas ≥99.999%.

(3) Fa'idodin Fasaha
Tsabta mai girma: Tsaftacewar bango <10¹⁶ cm⁻³ (N, B, da sauransu).

Girman girma: Taimaka wa girman substrate na SiC mai girman inci 6/8.

(4) Amfani da makamashi da farashi
Yawan amfani da makamashi mai yawa (200~500kW·h a kowace tanda), wanda ya kai kashi 30% ~50% na farashin samar da sinadarin SiC.

Manhajoji na asali:

1. Substrate na semiconductor mai ƙarfi: SiC MOSFETs don kera motocin lantarki da inverters na photovoltaic.

2. Na'urar Rf: Tashar tushe ta 5G GaN-on-SiC epitaxial substrate.

3. Na'urorin muhalli masu matuƙar ƙarfi: na'urori masu auna zafin jiki mai yawa don tashoshin samar da wutar lantarki ta sararin samaniya da makamashin nukiliya.

Bayanin fasaha:

Ƙayyadewa	Cikakkun bayanai
Girma (L × W × H)	4000 x 3400 x 4300 mm ko kuma a keɓance shi
Diamita na ɗakin murhu	1100mm
Ƙarfin lodawa	50kg
Matsakaicin matakin injin	10-2Pa (awa 2 bayan fara famfon kwayoyin halitta)
Ƙarar matsin lamba daga ɗakin taro	≤10Pa/h(bayan yin kalizim)
Ƙarfin ɗaga murfin murhun ƙasa	1500mm
Hanyar dumama	Dumamawar shigarwa
Matsakaicin zafin jiki a cikin tanderu	2400°C
Samar da wutar lantarki mai dumama	2X40kW
Ma'aunin zafin jiki	Ma'aunin zafin jiki mai launi biyu na infrared
Matsakaicin zafin jiki	900~3000℃
Daidaiton sarrafa zafin jiki	±1°C
Tsarin matsin lamba na sarrafawa	1~700mbar
Daidaiton Kula da Matsi	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar
Hanyar lodawa	Loads masu ƙarancin nauyi;
Tsarin zaɓi	Wurin auna zafin jiki sau biyu, sauke forklift.

Ayyukan XKH:

XKH tana ba da cikakken sabis na tanderun CVD na silicon carbide, gami da keɓance kayan aiki (ƙirƙirar yankin zafin jiki, tsarin tsarin iskar gas), haɓaka tsari (sarrafa lu'ulu'u, inganta lahani), horar da fasaha (aiki da kulawa) da tallafin bayan siyarwa (samar da kayan gyara na mahimman kayan aiki, gano abubuwa daga nesa) don taimakawa abokan ciniki cimma samar da kayan haɗin SiC mai inganci. Kuma suna ba da ayyukan haɓaka tsari don ci gaba da inganta yawan lu'ulu'u da ingancin girma.