Hanyar CVD don samar da manyan kayan albarkatun SiC masu tsabta a cikin tanderun carbon carbide a 1600 ℃

Hanyar CVD don samar da manyan kayan albarkatun SiC masu tsabta a cikin tanderun haɗaɗɗen silicon carbide a 1600 ℃ Featured Image

Takaitaccen Bayani:

A Silicon carbide (SiC) kira tanderu (CVD). Yana amfani da fasahar tururi na sinadari (CVD) zuwa ₄ tushen silicon gaseous (misali SiH₄, SiCl₄) a cikin yanayin zafi mai girma wanda suke amsawa ga tushen carbon (misali C₃H₈, CH₄). Maɓalli na na'ura don haɓaka lu'ulu'u na siliki carbide mai tsafta akan ƙaramin abu (graphite ko iri SiC). Ana amfani da fasaha da yawa don shirya SiC guda kristal substrate (4H / 6H-SiC), wanda shine ainihin kayan aiki don masana'antar wutar lantarki (kamar MOSFET, SBD).

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Cikakken Bayani

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Ƙa'idar aiki:

1. Precursor wadata. Tushen siliki (misali SiH₄) da tushen carbon (misali C₃H₈) iskar gas suna gauraye daidai gwargwado kuma ana ciyar da su cikin ɗakin amsawa.

2. High zafin jiki bazuwa: A wani babban zafin jiki na 1500 ~ 2300 ℃, da gas bazuwar haifar Si da C aiki atoms.

3. Halin da ke sama: Si da atom ɗin C ana ajiye su a saman ƙasa don samar da Layer na SiC crystal.

4. Girman Crystal: Ta hanyar kula da zafin jiki na zafin jiki, iskar gas da matsa lamba, don cimma ci gaban shugabanci tare da c axis ko axis.

Mahimmin sigogi:

Zazzabi: 1600 ~ 2200 ℃ (> 2000 ℃ don 4H-SiC)

· Matsi: 50 ~ 200mbar (ƙananan matsa lamba don rage ƙwayar gas)

Rawan iskar gas: Si / C≈1.0 ~ 1.2 (don guje wa lahanin haɓaka Si ko C)

Babban fasali:

(1) Crystal ingancin
Ƙarƙashin ƙarancin lahani: ƙarancin microtubule <0.5cm ⁻², ƙarancin rarrabuwa <10⁴ cm⁻².

Polycrystalline irin iko: iya girma 4H-SiC (na al'ada), 6H-SiC, 3C-SiC da sauran crystal iri.

(2) Ayyukan kayan aiki
High zafin jiki kwanciyar hankali: graphite induction dumama ko juriya dumama, zazzabi> 2300 ℃.

Ikon Uniformity: canjin zafin jiki ± 5 ℃, ƙimar girma 10 ~ 50μm / h.

Tsarin Gas: Babban Madaidaicin Matsala (MFC), Tsabtace Gas ≥99.999%.

(3) Fa'idodin fasaha
Tsabta mai girma: Ƙashin ƙazanta na bango <10¹⁶ cm⁻³ (N, B, da sauransu).

Babban girman: Taimakawa 6 ″/8' Ci gaban substrate SiC.

(4) Amfanin makamashi da farashi
Babban amfani da makamashi (200 ~ 500kW · h ta tanda), yana lissafin 30% ~ 50% na farashin samar da SiC substrate.

Babban aikace-aikace:

1. Ƙarfin wutar lantarki: SiC MOSFETs don kera motocin lantarki da masu juyawa na hoto.

2. Rf na'urar: 5G tushe tashar GaN-on-SiC epitaxial substrate.

3.Extreme muhalli na'urorin: high zafin jiki na'urori masu auna sigina sararin samaniya da makamashin nukiliya.

Ƙayyadaddun fasaha:

Ƙayyadaddun bayanai	Cikakkun bayanai
Girma (L × W × H)	4000 x 3400 x 4300 mm ko siffanta
diamita dakin murhu	1100mm
Ƙarfin lodi	50kg
Iyakar vacuum digiri	10-2Pa (2h bayan fara famfo kwayoyin halitta)
Matsakaicin tashin ɗaki	≤10Pa/h (bayan calcination)
Ƙarƙashin murfi na murfi daga bugun bugun jini	1500mm
Hanyar dumama	Induction dumama
Matsakaicin zafin jiki a cikin tanderun	2400°C
Zazzage wutar lantarki	2 x40 kW
Auna zafin jiki	Ma'aunin zafin infrared mai launi biyu
Yanayin zafin jiki	900 ~ 3000 ℃
Daidaitaccen sarrafa zafin jiki	±1°C
Sarrafa matsa lamba	1 ~ 700 mbar
Daidaiton Kula da Matsi	1 ~ 5mbar ± 0.1mbar; 5 ~ 100mbar ± 0.2mbar; 100 ~ 700mbar ± 0.5mbar
Hanyar lodawa	Ƙananan kaya;
Tsarin zaɓi na zaɓi	Wurin auna zafin jiki sau biyu, sauke cokali mai yatsu.

Ayyukan XKH:

XKH yana ba da sabis na cikakken sake zagayowar don murhun silicon carbide CVD, gami da gyare-gyaren kayan aiki (tsarin yanki na zafin jiki, tsarin tsarin gas), haɓaka aiwatarwa (ikon crystal, haɓaka lahani), horar da fasaha (aiki da kiyayewa) da tallafin tallace-tallace bayan-tallace-tallace (kayan da aka keɓe na samar da mahimman abubuwan haɗin gwiwa, bincike mai nisa) don taimakawa abokan ciniki cimma babban ingancin SiC substrate taro samar. Kuma ba da sabis na haɓaka tsari don ci gaba da haɓaka yawan amfanin ƙasa da ƙimar girma.