Injin yanke waya mai lu'u-lu'u na silicon carbide 4/6/8/12 inch SiC ingot working
Ka'idar aiki:
1. Gyaran Ingot: An gyara ingot SiC (4H/6H-SiC) a kan dandamalin yankewa ta hanyar kayan aiki don tabbatar da daidaiton wurin (±0.02mm).
2. Motsin layin lu'u-lu'u: layin lu'u-lu'u (ƙwayoyin lu'u-lu'u masu amfani da wutar lantarki a saman) tsarin ƙafafun jagora ne ke tuƙa shi don zagayawa mai sauri (gudun layin 10 ~ 30m/s).
3. Yanke abincin: ana ciyar da ingot ɗin a daidai inda aka saita, kuma ana yanke layin lu'u-lu'u a lokaci guda tare da layuka da yawa a layi ɗaya (layuka 100 ~ 500) don samar da wafers da yawa.
4. Sanyaya da cire guntu: Fesa ruwan sanyaya (ruwan da aka cire da ion + ƙarin abubuwa) a yankin yankewa don rage lalacewar zafi da kuma cire guntu.
Maɓallan mahimmanci:
1. Saurin yankewa: 0.2~1.0mm/min (ya danganta da alkiblar lu'ulu'u da kauri na SiC).
2. Tashin hankali a layi: 20~50N (layin ya yi tsayi sosai, yana da sauƙin karyawa, kuma yana da ƙarancin tasiri ga daidaiton yankewa).
3. Kauri na Wafer: daidaitaccen 350 ~ 500μm, wafer zai iya kaiwa 100μm.
Babban fasali:
(1) Daidaiton yankewa
Juriyar kauri: ±5μm (@350μm wafer), ya fi yanke turmi na gargajiya (±20μm).
Rashin ƙarfi a saman: Ra <0.5μm (ba a buƙatar ƙarin niƙa don rage yawan sarrafawa na gaba).
Yaƙi: <10μm (rage wahalar gogewa daga baya).
(2) Ingantaccen sarrafawa
Yanke layi da yawa: yankan guda 100 ~ 500 a lokaci guda, ƙara ƙarfin samarwa sau 3 ~ 5 (idan aka kwatanta da yanke layi ɗaya).
Rayuwar layi: Layin lu'u-lu'u zai iya yanke SiC 100 ~ 300km (ya danganta da taurin ingot da inganta tsarin).
(3) Ƙarancin lalacewa ta hanyar sarrafa
Karyewar gefen: <15μm (yankewa na gargajiya > 50μm), inganta yawan wafer.
Layin lalacewar ƙasa: <5μm (rage cire gogewa).
(4) Kare Muhalli da tattalin arziki
Babu gurɓatar turmi: Rage farashin zubar da shara idan aka kwatanta da yanke turmi.
Amfani da kayan aiki: Rage asarar <100μm/ mai yankewa, yana adana albarkatun ƙasa na SiC.
Tasirin yankewa:
1. Ingancin Wafer: babu tsagewar macroscopic a saman, ƙananan lahani kaɗan (ƙaramar raguwar da za a iya sarrafawa). Zai iya shiga hanyar gogewa kai tsaye, rage yawan aikin.
2. Daidaito: kauri na wafer a cikin tsari shine <±3%, ya dace da samarwa ta atomatik.
3. Aiwatarwa: Taimaka wa yanke ingot 4H/6H-SiC, wanda ya dace da nau'in mai sarrafawa/mai rufi.
Bayanin fasaha:
| Ƙayyadewa | Cikakkun bayanai |
| Girma (L × W × H) | 2500x2300x2500 ko kuma a keɓance shi |
| Tsarin girman kayan aiki | Inci 4, 6, 8, 10, 12 na silicon carbide |
| Tsaurin saman | Ra≤0.3u |
| Matsakaicin saurin yankewa | 0.3mm/min |
| Nauyi | 5.5t |
| Matakan saita tsarin yankewa | Matakai ≤30 |
| Hayaniyar kayan aiki | ≤80 dB |
| Tashin hankali na waya na ƙarfe | 0~110N(Tsinkayar waya 0.25N ne) |
| Gudun wayar ƙarfe | 0~30m/S |
| Jimlar ƙarfi | 50kw |
| Diamita na waya mai lu'u-lu'u | ≥0.18mm |
| Ƙarshen layi | ≤0.05mm |
| Yankewa da karyewa | ≤1% (sai dai dalilan ɗan adam, kayan silicon, layi, kulawa da sauran dalilai) |
Ayyukan XKH:
XKH tana ba da dukkan ayyukan sarrafa waya na silicon carbide, gami da zaɓin kayan aiki (daidaitawa tsakanin waya/gudun waya), haɓaka tsari (inganta sigogin yankewa), samar da abubuwan amfani (wayar lu'u-lu'u, ƙafafun jagora) da tallafin bayan siyarwa (gyaran kayan aiki, nazarin ingancin yankewa), don taimakawa abokan ciniki su cimma babban yawan amfanin ƙasa (>95%), samar da wafer mai rahusa na SiC. Hakanan yana ba da haɓakawa na musamman (kamar yankewa mai siriri sosai, lodawa ta atomatik da sauke kaya) tare da lokacin jagoranci na makonni 4-8.
Cikakken Zane





