8inch 200mm Silicon Carbide SiC Wafers 4H-N nau'in Samar da darajar 500um kauri

8inch 200mm Silicon Carbide SiC Wafers 4H-N nau'in samarwa nau'in 500um kauri Featured Hoton

Takaitaccen Bayani:

Shanghai Xinkehui Tech.Co., Ltd yana ba da mafi kyawun zaɓi da farashi don madaidaicin siliki carbide wafers da madaidaitan madauri har zuwa diamita 8inch tare da nau'ikan N- da Semi-insulating iri.Kamfanonin na'urori na kanana da manya da dakunan gwaje-gwaje a duk duniya suna amfani da dogaro da wafers carbide na silicone.

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200mm 8inch SiC Ƙayyadaddun Ƙirar Maɗaukaki

Girma: 8 inch;

Diamita: 200mm± 0.2;

Kauri: 500um± 25;

Fuskar Fuska: 4 zuwa [11-20] ± 0.5 °;

Matsakaicin daraja: [1-100]±1°;

Zurfin daraja: 1 ± 0.25mm;

Bututu: <1cm2;

Hex Plates: Babu Wanda Ya Halatta;

Juriya: 0.015 ~ 0.028Ω;

EPD: <8000cm2;

TED: <6000cm2

BPD: <2000cm2

TSD: <1000cm2

SF: yanki <1%

TTV≤15um;

Warp≤40um;

Baka ≤25um;

Yankunan poly: ≤5%;

Tsare-tsare: <5 da Tsawon Taruwa< 1 Diamita na Wafer;

Chips/Indents: Babu wani izini D>0.5mm Nisa da Zurfin;

Karas: Babu;

Tabo: Babu

Wafer baki: Chamfer;

Ƙarshen farfajiya: Biyu Side Polish, Si Face CMP;

Shiryawa: Cassette Multi-wafer Ko Akwatin Wafer guda ɗaya;

Matsalolin yanzu a cikin shirye-shiryen 200mm 4H-SiC lu'ulu'u mainl

1) A shirye-shiryen na high quality 200mm 4H-SiC iri lu'ulu'u;

2) Babban girman filin zafin jiki mara daidaituwa da sarrafa tsarin nucleation;

3) Ingantaccen sufuri da juyin halitta na abubuwan da aka gyara na gaseous a cikin tsarin girma na crystal;

4) Crystal fatattaka da lahani yaduwa lalacewa ta hanyar babban size thermal danniya karuwa.

Don shawo kan waɗannan ƙalubalen da samun ingantacciyar 200mm SiC waferssolutions ana ba da shawarar:

Dangane da shirye-shiryen kristal iri na 200mm, filin kwararar zafin jiki mai dacewa, da haɓaka taro an yi nazarin kuma an tsara su don ɗaukar ingancin kristal da girman faɗaɗa;An fara da 150mm SiC se:d crystal, aiwatar da nau'in kristal iri don faɗaɗa a hankali SiC cristasize har sai ya kai 200mm;Ta hanyar haɓakar kristal da yawa da aiwatarwa, sannu a hankali haɓaka ingancin kristal a cikin yanki na faɗaɗa kristal, da haɓaka ingancin lu'ulu'u na iri 200mm.

Dangane da 200mm kristal conductive crystal da substrate shirye-shirye, bincike ya inganta yanayin zafin jiki feld da kwarara filin zane don babban girman crystalgrowth, gudanar 200mm conductive SiC crystal girma, da kuma sarrafa doping uniformity.Bayan m aiki da siffata na crystal, an samu 8-inchelectrically conductive 4H-SiC ingot tare da daidaitaccen diamita.Bayan yankan, niƙa, gogewa, sarrafawa don samun wafers na SiC 200mm tare da kauri na 525um ko makamancin haka.