4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research aji 500um kauri

Takaitaccen Bayani:

Silicon carbide wafers ana amfani da su a cikin na'urorin lantarki kamar wutar lantarki, MOSFETs, na'urorin microwave masu ƙarfi, da transistor RF, suna ba da damar ingantaccen canjin makamashi da sarrafa wutar lantarki.SiC wafers da substrates kuma suna samun amfani a cikin kayan lantarki na kera motoci, tsarin sararin samaniya, da fasahohin makamashi masu sabuntawa.


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Ta yaya kuke Zaɓi Silicon Carbide Wafers & Substrates SiC?

Lokacin zabar siliki carbide (SiC) wafers da substrates, akwai abubuwa da yawa don la'akari.Ga wasu muhimman sharudda:

Nau'in Material: Ƙayyade nau'in kayan SiC wanda ya dace da aikace-aikacenku, kamar 4H-SiC ko 6H-SiC.Tsarin crystal da aka fi amfani dashi shine 4H-SiC.

Nau'in Doping: Yanke shawarar ko kuna buƙatar abin da aka yi amfani da shi ko kuma wanda ba a kwance SiC ba.Nau'in doping na yau da kullun sune nau'in N-n-doped ko P-type (p-doped), ya danganta da takamaiman buƙatun ku.

Ingancin Crystal: Yi la'akari da ingancin kristal na wafers na SiC.Ana ƙididdige ƙimar da ake so ta sigogi kamar adadin lahani, daidaitawar crystallographic, da rashin ƙarfi na saman.

Diamita Wafer: Zaɓi girman wafer da ya dace dangane da aikace-aikacenku.Girman gama gari sun haɗa da inci 2, inci 3, inci 4, da inci 6.Girman diamita, yawan yawan amfanin ƙasa da za ku iya samu ta kowace wafer.

Kauri: Yi la'akari da kauri da ake so na wafers na SiC ko abubuwan da ake so.Zaɓuɓɓukan kauri na yau da kullun suna kewayo daga ƴan micrometers zuwa ɗari da yawa micrometers.

Gabatarwa: Ƙayyade daidaitawar crystallographic wanda ya dace da buƙatun aikace-aikacen ku.Hanyoyi gama gari sun haɗa da (0001) don 4H-SiC da (0001) ko (0001̅) don 6H-SiC.

Ƙarshen Sama: Ƙimar ƙarewar saman wafers na SiC ko abubuwan da ke ƙasa.Ya kamata saman ya zama santsi, goge, kuma ba shi da karce ko gurɓatawa.

Sunan mai bayarwa: Zaɓi babban mai siyarwa tare da gogewa mai yawa a cikin samar da ingantattun wafers na SiC da abubuwan maye.Yi la'akari da abubuwa kamar iyawar masana'anta, sarrafa inganci, da sake dubawa na abokin ciniki.

Farashi: Yi la'akari da abubuwan farashi, gami da farashin kowace wafer ko ƙasa da kowane ƙarin kuɗaɗen keɓancewa.

Yana da mahimmanci a tantance waɗannan abubuwan a hankali kuma a tuntuɓi ƙwararrun masana'antu ko masu siyarwa don tabbatar da cewa zaɓaɓɓun wafers na SiC da abubuwan maye sun cika takamaiman buƙatun ku.

Cikakken zane

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research aji 500um kauri (1)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research aji 500um kauri (2)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research aji 500um kauri (3)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research aji 500um kauri (4)

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