Wafers na Silicon Carbide SiC mai inci 8 200mm 4H-N nau'in samarwa Kauri 500um

Wafers na Silicon Carbide SiC mai inci 8 200mm 4H-N nau'in samarwa mai kauri 500um. Hoton da aka nuna

Takaitaccen Bayani:

Shanghai Xinkehui Tech. Co., Ltd tana ba da mafi kyawun zaɓi da farashi don wafers masu inganci na silicon carbide da substrates har zuwa diamita inci 8 tare da nau'ikan N- da semi-insulating. Ƙananan da manyan kamfanonin na'urorin semiconductor da dakunan gwaje-gwaje na bincike a duk duniya suna amfani da wafers ɗin silicon carbide ɗinmu kuma suna dogara da su.

Aika mana imel

Siffofi

Bayanin SiC Substrate na 200mm 8inch

Girman: inci 8;

Diamita: 200mm±0.2;

Kauri: 500um±25;

Tsarin Fuskar Sama: 4 zuwa [11-20]±0.5°;

Daidaiton ginshiƙi:[1-100]±1°；

Zurfin rami: 1±0.25mm

Babban bututu: <1cm2;

Faranti na Hex: Babu wanda aka yarda;

Juriya: 0.015~0.028Ω;

EPD: <8000cm2;

TED: <6000cm2

BPD: <2000cm2

TSD: <1000cm2

SF: yanki <1%

TTV≤15um；

Warp≤40um；

Bow≤25um；

Yankunan Poly: ≤5%;

Karce: <5 da Tsawon Tarawa < 1 Diamita na Wafer;

Kwakwalwa/Mai Haɗewa: Babu wanda ya yarda da faɗin D>0.5mm da zurfinsa;

Fashewa: Babu;

Tabo: Babu

Gefen Wafer: Chamfer;

Ƙarshen saman: Gilashin gefe biyu, Si Face CMP;

Kunshin: Kaset ɗin Wafer Mai Yawa Ko Akwatin Wafer Guda ɗaya;

Matsalolin da ake fuskanta a yanzu wajen shirya lu'ulu'u masu girman 200mm 4H-SiC

1) Shirye-shiryen lu'ulu'u iri masu inganci na 200mm 4H-SiC;

2) Babban girman filin zafin jiki mara daidaito da sarrafa tsarin nucleation;

3) Ingancin sufuri da juyin halittar abubuwan da ke cikin iskar gas a cikin manyan tsarin girma na lu'ulu'u;

4) Fashewar lu'ulu'u da kuma yaduwar lahani sakamakon babban matsin lamba na zafi yana ƙaruwa.

Don shawo kan waɗannan ƙalubalen da kuma samun mafita masu inganci na 200mm SiC, ana ba da shawarar:

Dangane da shirye-shiryen kristal iri na 200mm, an yi nazari kuma an tsara filin kwararar zafin jiki mai dacewa, da kuma haɗakar faɗaɗawa don la'akari da ingancin kristal da girman faɗaɗawa; Farawa da kristal SiC se:d 150mm, gudanar da maimaita kristal iri don faɗaɗa crystasize na SiC a hankali har sai ya kai 200mm; Ta hanyar girma da tsari da yawa na kristal, a hankali inganta ingancin kristal a yankin faɗaɗa kristal, kuma inganta ingancin kristal iri na 200mm.

Dangane da shirye-shiryen lu'ulu'u masu sarrafa kansu da substrate na 200mm, bincike ya inganta tsarin zafin jiki da kuma kwararar filin don girman lu'ulu'u mai girma, yana gudanar da girman lu'ulu'u na SiC mai sarrafa kansa 200mm, da kuma sarrafa daidaiton doping. Bayan sarrafawa da siffanta lu'ulu'u, an sami ingot mai sarrafa wutar lantarki 4H-SiC mai inci 8 mai sarrafa wutar lantarki tare da diamita na yau da kullun. Bayan yankewa, niƙa, gogewa, da sarrafawa don samun wafers na SiC 200mm tare da kauri na 525um ko makamancin haka.