6inch 150mm Silicon Carbide SiC Wafers 4H-N nau'in don MOS ko SBD Production Research da Dummy grade

6inch 150mm Silicon Carbide SiC Wafers 4H-N nau'in don MOS ko Binciken Samar da SBD da Hoton da aka Haɓaka.

Takaitaccen Bayani:

6-inch silicon carbide guda crystal substrate abu ne mai girma mai aiki tare da kyawawan kaddarorin jiki da sinadarai.An ƙera shi daga babban siliki carbide kristal guda ɗaya mai tsafta, yana nuna ingantaccen ƙarfin zafi, kwanciyar hankali na inji, da juriya mai zafi.Wannan sinadari, wanda aka yi tare da ingantattun hanyoyin masana'antu da kayan aiki masu inganci, ya zama abin da aka fi so don kera na'urorin lantarki masu inganci a fannoni daban-daban.

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6-inch silicon carbide guda crystal substrate yana taka muhimmiyar rawa a cikin masana'antu da yawa.Da fari dai, ana amfani da shi sosai a masana'antar semiconductor don ƙirƙira na'urorin lantarki masu ƙarfi kamar transistor, haɗaɗɗun da'irori, da na'urori masu ƙarfi.Matsayinsa mai girma na thermal da juriya mai zafi yana ba da damar mafi kyawun zubar da zafi, yana haifar da ingantaccen inganci da aminci.Na biyu, siliki carbide wafers suna da mahimmanci a fagen bincike don haɓaka sabbin kayayyaki da na'urori.Bugu da ƙari, siliki carbide wafer yana samun aikace-aikace masu yawa a fagen optoelectronics, gami da kera LEDs da diodes na laser.

Ƙayyadaddun samfur

6-inch silicon carbide guda crystal substrate yana da diamita na 6 inci (kimanin 152.4 mm).Ƙwararren ƙasa shine Ra <0.5 nm, kuma kauri shine 600 ± 25 μm.Za'a iya keɓance ma'auni tare da nau'in N-type ko nau'in nau'in P, dangane da buƙatun abokin ciniki.Haka kuma, yana nuna nagartaccen kwanciyar hankali na inji, mai iya jure matsi da girgiza.

Diamita		150 ± 2.0mm (6 inch)
Kauri		350 μm± 25μm
Gabatarwa		Kan axis: <0001>±0.5°		Kashe axis: 4.0 ° zuwa 1120 ± 0.5 °
Polytype		4H
Resistivity (Ω·cm)	4 H-N	0.015 ~ 0.028 Ω · cm/0.015 ~ 0.025ohm · cm
	4/6H-SI	> 1 E5
Matsakaicin matakin farko		{10-10}±5.0°
Tsawon lebur na farko (mm)		47.5 mm± 2.5 mm
Gefen		Chamfer
TTV/Baka/Warp (um)		≤15 /≤40/≤60
AFM Front (Si-face)		Yaren mutanen Poland Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm (10mm*10mm)	≤5μm (10mm*10mm)		≤10μm (10mm*10mm)
TTV		≤5 μm	≤10 μm		≤15 μm
Bawon lemu/ramuka/karas/ gurbacewa/tabo/tabo		Babu	Babu		Babu
indents		Babu	Babu		Babu

6-inch silicon carbide guda crystal substrate abu ne mai girma da aka yi amfani da shi sosai a cikin masana'antar semiconductor, bincike, da masana'antar optoelectronics.Yana ba da kyakkyawan yanayin zafi, kwanciyar hankali na inji, da juriya mai zafi, yana sa ya dace da ƙirƙira na'urorin lantarki masu ƙarfi da sababbin kayan bincike.Muna ba da ƙayyadaddun bayanai daban-daban da zaɓuɓɓukan keɓancewa don biyan buƙatun abokin ciniki iri-iri.Tuntube mu don ƙarin cikakkun bayanai akan wafers na siliki carbide!