Wafers na Silicon Carbide SiC mai inci 6 150mm 4H-N don Binciken Samarwa na MOS ko SBD da kuma matakin Dummy

Wafers na Silicon Carbide SiC mai inci 6 150mm 4H-N don Binciken Samarwa na MOS ko SBD da kuma darajar Dummy Hoton da aka nuna

Takaitaccen Bayani:

Tsarin silinda mai inci 6 na silicon carbide abu ne mai matuƙar aiki tare da kyawawan halaye na zahiri da na sinadarai. An ƙera shi daga kayan silinda mai silinda mai yawan tsarki, yana nuna ingantaccen yanayin zafi, kwanciyar hankali na inji, da juriya ga zafin jiki mai yawa. Wannan silinda, wanda aka yi shi da ingantattun hanyoyin kera kayayyaki da kayayyaki masu inganci, ya zama kayan da aka fi so don ƙera na'urorin lantarki masu inganci a fannoni daban-daban.

Aika mana imel

Siffofi

Filayen Aikace-aikace

Tsarin silinda mai inci 6 na silicon carbide yana taka muhimmiyar rawa a masana'antu da dama. Na farko, ana amfani da shi sosai a masana'antar semiconductor don ƙera na'urorin lantarki masu ƙarfi kamar transistor na wutar lantarki, da'irori masu haɗawa, da na'urorin wutar lantarki. Babban ƙarfinsa na zafi da juriya mai zafi yana ba da damar watsa zafi mafi kyau, wanda ke haifar da ingantaccen inganci da aminci. Na biyu, wafers na silicon carbide suna da mahimmanci a fannonin bincike don haɓaka sabbin kayayyaki da na'urori. Bugu da ƙari, wafer ɗin silicon carbide yana samun aikace-aikace masu yawa a fannin optoelectronics, gami da kera LEDs da diodes na laser.

Bayanin Samfura

Tsarin lu'ulu'u mai inci 6 na silicon carbide yana da diamita na inci 6 (kimanin 152.4 mm). Tsananin saman shine Ra < 0.5 nm, kuma kauri shine 600 ± 25 μm. Ana iya keɓance substrate ɗin ta hanyar amfani da nau'in N ko P, bisa ga buƙatun abokin ciniki. Bugu da ƙari, yana nuna kwanciyar hankali na injiniya, wanda ke iya jure matsin lamba da girgiza.

diamita		150±2.0mm(6inci)
Kauri		350 μm±25μm
Hanya		A kan axis: <0001>±0.5°		Kashe axis: 4.0° zuwa 1120±0.5°
Nau'in Polytype		4H
Juriya (Ω · cm)	4H-N	0.015 ~ 0.028 Ω · cm/0.015 ~ 0.025ohm · cm
	4/6H-SI	>1E5
Babban shimfidar wuri mai faɗi		{10-10}±5.0°
Tsawon lebur na farko (mm)		47.5 mm±2.5 mm
Gefen		Chamfer
TTV/Bow/Warp (um)		≤15 /≤40 /≤60
Gaban AFM (Si-face)		Yaren mutanen Poland Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
Bawon lemu/rami/fashewa/gurɓatawa/tabo/tabo		Babu	Babu		Babu
Ɓoye		Babu	Babu		Babu

Tsarin silinda mai inci 6 na silicon carbide abu ne mai matuƙar aiki wanda ake amfani da shi sosai a masana'antar semiconductor, bincike, da kuma masana'antar lantarki. Yana ba da kyakkyawan yanayin zafi, kwanciyar hankali na injiniya, da juriya ga zafin jiki mai yawa, wanda hakan ya sa ya dace da ƙera na'urorin lantarki masu ƙarfi da sabbin bincike na kayan aiki. Muna ba da ƙayyadaddun bayanai daban-daban da zaɓuɓɓukan keɓancewa don biyan buƙatun abokan ciniki daban-daban.Tuntube mu don ƙarin bayani game da wafers ɗin silicon carbide!