4H-N/6H-N SiC Wafer Reasearch samarwa Dummy grade Dia150mm Silicon carbide substrate
6 inch diamita silicon carbide (SiC) takamaiman substrate
Daraja | Zero MPD | Production | Matsayin Bincike | Dummy Grade |
Diamita | 150.0mm 0.25mm | |||
Kauri | 4 H-N | 350um± 25um | ||
4H-SI | 500um± 25um | |||
Wafer Orientation | Kan axis: <0001>±0.5°don 4H-SI | |||
Filayen Firamare | {10-10}±5.0° | |||
Tsawon Fitowa na Farko | 47.5mm ± 2.5mm | |||
Cire gefen | 3 mm | |||
TTV/Baka/Warp | ≤15um/≤40um/≤60um | |||
Maƙarƙashiya Maɗaukaki | ≤1cm-2 | ≤5cm-2 | ≤15cm-2 | ≤50cm-2 |
Resistivity 4H-N 4H-SI | 0.015 ~ 0.028Ω! cm | |||
≥1E5Ω!cm | ||||
Tashin hankali | Yaren mutanen Poland Ra ≤1nm CMP Ra≤0.5nm | |||
# Cracks ta hanyar haske mai ƙarfi | Babu | 1 izini, ≤2mm | Tsayin tarawa ≤10mm, tsayi ɗaya≤2mm | |
* Hex faranti ta babban haske mai ƙarfi | Tarin yanki ≤1% | Yankin tarawa ≤ 2% | Tarin yanki ≤ 5% | |
* Yankunan polytype ta babban haske mai ƙarfi | Babu | Yankin tarawa ≤ 2% | Tarin yanki ≤ 5% | |
*&Sauke da haske mai ƙarfi | 3 karce zuwa diamita na wafer 1 x tsayin tarawa | 5 ya karu zuwa diamita na wafer 1 x tsayin tarawa | 5scratches zuwa diamita na wafer 1 x tsayin tarawa | |
Guntun gefen | Babu | 3 izini, ≤0.5mm kowane | 5 izini, ≤1mm kowane | |
Lalacewa ta wurin babban haske mai ƙarfi | Babu
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Tallace-tallace & Sabis na Abokin Ciniki
Sayen Kayayyaki
Sashen siyan kayan yana da alhakin tattara duk albarkatun da ake buƙata don samar da samfuran ku. Cikakken gano duk samfuran da kayan aiki, gami da nazarin sinadarai da na jiki koyaushe ana samunsu.
inganci
Lokacin da bayan ƙirƙira ko sarrafa samfuran ku, sashin kula da ingancin yana da hannu wajen tabbatar da cewa duk kayan aiki da haƙuri sun hadu ko wuce ƙayyadaddun ku.
Sabis
Muna alfahari da samun ma'aikatan injiniyan tallace-tallace tare da gogewar shekaru 5 a cikin masana'antar semiconductor. An horar da su don amsa tambayoyin fasaha da kuma samar da maganganun da ya dace don bukatun ku.
Muna tare da ku ta kowane lokaci lokacin da kuke da matsala, kuma ku magance shi cikin sa'o'i 10.