Wafer ɗin SiC mai inci 8 mai siffar 4H-N Silicon Carbide Dummy Research grade 500um kauri
Ta Yaya Za Ku Zabi Wafers na Silicon Carbide da SiC Substrates?
Lokacin zabar wafers da substrates na silicon carbide (SiC), akwai abubuwa da yawa da za a yi la'akari da su. Ga wasu muhimman sharudda:
Nau'in Kayan Aiki: Kayyade nau'in kayan SiC da ya dace da aikace-aikacenka, kamar 4H-SiC ko 6H-SiC. Tsarin lu'ulu'u da aka fi amfani da shi shine 4H-SiC.
Nau'in Magungunan Doping: Ka yanke shawara ko kana buƙatar sinadarin SiC da aka yi amfani da shi ko wanda ba a yi amfani da shi ba. Nau'in Magungunan Doping da aka fi amfani da shi sune nau'in N (n-doped) ko nau'in P (p-doped), ya danganta da takamaiman buƙatunka.
Ingancin Lu'ulu'u: Kimanta ingancin lu'ulu'u na wafers ko substrates na SiC. Ana ƙayyade ingancin da ake so ta hanyar sigogi kamar adadin lahani, yanayin lu'ulu'u, da kuma ƙaiƙayin saman.
Diamita na Wafer: Zaɓi girman wafer ɗin da ya dace bisa ga aikace-aikacenku. Girman da aka saba amfani da shi sun haɗa da inci 2, inci 3, inci 4, da inci 6. Girman diamita, yawan amfanin da za ku iya samu a kowace wafer.
Kauri: Yi la'akari da kauri da ake so na wafers ko substrates na SiC. Zaɓuɓɓukan kauri na yau da kullun sun kama daga ƙananan micrometers zuwa ɗaruruwan micrometers.
Hanya: Kayyade yanayin lu'ulu'u wanda ya dace da buƙatun aikace-aikacenka. Hanya ta gama gari ta haɗa da (0001) don 4H-SiC da (0001) ko (0001̅) don 6H-SiC.
Kammalawar Sama: Kimanta ƙarshen saman wafers ko substrates na SiC. Ya kamata saman ya kasance mai santsi, mai gogewa, kuma babu ƙazantar ko gurɓatawa.
Suna ga Mai Kaya: Zaɓi mai kaya mai suna wanda ke da ƙwarewa sosai wajen samar da wafers masu inganci na SiC da substrates. Yi la'akari da abubuwa kamar ƙarfin masana'antu, kula da inganci, da kuma sake dubawa ga abokan ciniki.
Kudin: Yi la'akari da tasirin farashin, gami da farashin kowace wafer ko substrate da duk wani ƙarin kuɗaɗen gyare-gyare.
Yana da mahimmanci a yi nazari sosai kan waɗannan abubuwan kuma a tuntuɓi ƙwararrun masana'antu ko masu samar da kayayyaki don tabbatar da cewa wafers da substrates ɗin SiC da aka zaɓa sun cika takamaiman buƙatun aikace-aikacenku.


