Kayan Aikin Rage Wafer don Sarrafa Wafers Mai Inci 4-12 na Sapphire/SiC/Si

Takaitaccen Bayani:

Kayan Aikin Rage Tsami na Wafer kayan aiki ne mai mahimmanci a masana'antar semiconductor don rage kauri na wafer don inganta sarrafa zafi, aikin lantarki, da ingancin marufi. Wannan kayan aikin yana amfani da fasahar niƙa na injiniya, goge injinan sinadarai (CMP), da fasahar etching busasshe/daji don cimma daidaitaccen iko na kauri (±0.1 μm) da kuma dacewa da wafers na inci 4-12. Tsarinmu yana tallafawa yanayin C/A-plane kuma an tsara shi don aikace-aikace na ci gaba kamar 3D ICs, na'urorin wutar lantarki (IGBT/MOSFETs), da firikwensin MEMS.

XKH tana samar da mafita mai cikakken tsari, gami da kayan aiki na musamman (sarrafawa na wafer inci 2-12), inganta tsari (yawan lahani <100/cm²), da kuma horar da fasaha.

Aika mana imel

Siffofi

Ka'idar Aiki

Tsarin rage kiba yana aiki ta matakai uku:
Niƙa Mai Tauri: Tayar lu'u-lu'u (girman grit 200–500 μm) tana cire μm 50–150 a rpm 3000–5000 don rage kauri cikin sauri.
Niƙa Mai Kyau: Tayar da ta fi ƙanƙanta (girth size 1–50 μm) tana rage kauri zuwa 20–50 μm a <1 μm/s don rage lalacewar ƙasa.
Gogewa (CMP): Ruwan sinadarai da na injiniya yana kawar da ragowar lalacewa, yana cimma Ra <0.1 nm.

Kayan da suka dace

Silicon (Si): Daidaitacce ga wafers na CMOS, wanda aka rage shi zuwa 25 μm don tara abubuwa ta hanyar 3D.
Silicon Carbide (SiC): Yana buƙatar tayoyin lu'u-lu'u na musamman (kashi 80% na yawan lu'u-lu'u) don kwanciyar hankali na zafi.
Sapphire (Al₂O₃): An rage girmansa zuwa 50 μm don amfani da hasken UV LED.

Babban Kayan Tsarin

1. Tsarin Nika
Injin Niƙa Mai Sau Biyu: Yana haɗa niƙa mai kauri/mai laushi a cikin dandamali ɗaya, yana rage lokacin zagayowar da kashi 40%.
Sandar Iska Mai Tsanani: Matsakaicin gudu na 0–6000 rpm tare da <0.5 μm radial runout.

2. Tsarin Gudanar da Wafer
Vacuum Chuck: >50 N ƙarfin riƙewa tare da daidaiton matsayi na ±0.1 μm.
Hannun Robot: Yana jigilar wafers mai inci 4–12 a 100 mm/s.

3. Tsarin Kulawa
Tsarin Laser Interferometry: Kula da kauri na ainihin lokaci (ƙuduri 0.01 μm).
AI-Driven Feedforward: Yana hasashen lalacewar ƙafafun kuma yana daidaita sigogi ta atomatik.

4. Sanyaya da Tsaftacewa
Tsaftace Ultrasonic: Yana cire ƙwayoyin da suka wuce 0.5 μm tare da inganci 99.9%.
Ruwan da aka cire daga jiki: Yana sanyaya ruwan wafer zuwa ƙasa da digiri 5 na Celsius sama da yanayin da ake ciki.

Babban Amfanin

1. Daidaito Mai Girma: TTV (Bambancin Kauri Jimillar) <0.5 μm, WTW (Bambancin Kauri Cikin Wafer) <1 μm.

2. Haɗin Tsarin Aiki da yawa: Yana haɗa niƙa, CMP, da kuma etching na plasma a cikin injin ɗaya.

3. Dacewar Kayan Aiki:
Silicon: Rage kauri daga 775 μm zuwa 25 μm.
SiC: Yana cimma sama da 2 μm TTV don aikace-aikacen RF.
Wafers ɗin da aka Doped: Wafers ɗin da aka Doped da Phosphorus tare da raguwar juriyar ƙasa da kashi 5%.

4. Wayar hannu ta Wayo: Haɗakar MES yana rage kuskuren ɗan adam da kashi 70%.

5. Ingantaccen Amfani da Makamashi: Rage amfani da wutar lantarki da kashi 30% ta hanyar birki mai sabuntawa.

Manhajoji Masu Mahimmanci

1. Marufi Mai Ci Gaba
• 3D ICs: Rage girman wafer yana ba da damar tara kwakwalwan dabaru/ƙwaƙwalwa a tsaye (misali, tarin HBM), cimma babban bandwidth 10× da rage yawan amfani da wutar lantarki da kashi 50% idan aka kwatanta da mafita 2.5D. Kayan aikin suna tallafawa haɗin kai na haɗin gwiwa da haɗin TSV (Through-Silicon Via), wanda yake da mahimmanci ga masu sarrafawa na AI/ML waɗanda ke buƙatar <10 μm haɗin kai. Misali, wafers masu inci 12 waɗanda aka rage girmansu zuwa 25 μm suna ba da damar tara yadudduka 8+ yayin da suke kula da <1.5% warpage, wanda yake da mahimmanci ga tsarin LiDAR na mota.

• Marufi Mai Fitar da Fuskoki: Ta hanyar rage kauri na wafer zuwa 30 μm, tsawon haɗin gwiwa yana raguwa da 50%, yana rage jinkirin sigina (<0.2 ps/mm) kuma yana ba da damar 0.4 mm siririn chiplets don SoCs na hannu. Tsarin yana amfani da algorithms na niƙa mai ramawa don hana warpage (>50 μm sarrafa TTV), yana tabbatar da aminci a cikin aikace-aikacen RF mai yawan mita.

2. Lantarki Mai Lantarki
• Na'urorin IGBT: Rage gudu zuwa 50 μm yana rage juriyar zafi zuwa <0.5°C/W, yana ba da damar 1200V SiC MOSFETs su yi aiki a yanayin zafi na 200°C. Kayan aikinmu suna amfani da niƙa mai matakai da yawa (ƙararrawa: grit 46 μm → fine: grit 4 μm) don kawar da lalacewar ƙasa, cimma zagayowar da ta wuce 10,000 na ingancin zagayowar zafi. Wannan yana da mahimmanci ga inverters na EV, inda wafers na SiC mai kauri 10 μm suna inganta saurin sauyawa da 30%.
• Na'urorin Wutar Lantarki na GaN-on-SiC: Rage girman wafer zuwa 80 μm yana haɓaka motsi na lantarki (μ > 2000 cm²/V·s) don 650V GaN HEMTs, yana rage asarar watsawa da 18%. Tsarin yana amfani da dicing mai taimakon laser don hana tsagewa yayin ragewa, yana cimma nasarar <5 μm na guntuwar gefen don amplifiers na wutar lantarki na RF.

3. Injin lantarki
• LEDs na GaN-on-SiC: Abubuwan da ke cikin sapphire 50 μm suna inganta ingancin fitar da haske (LEE) zuwa 85% (idan aka kwatanta da 65% ga wafers 150 μm) ta hanyar rage tarko na photon. Ikon TTV mai ƙarancin ƙarfi (<0.3 μm) na kayan aikinmu yana tabbatar da fitar da haske iri ɗaya na LED a cikin wafers masu inci 12, wanda yake da mahimmanci ga nunin Micro-LED wanda ke buƙatar <100nm daidaiton tsayi.
• Silicon Photonics: Wafers ɗin silicon mai kauri 25μm suna ba da damar rage asarar yaɗuwa 3 dB/cm a cikin jagororin raƙuman ruwa, wanda yake da mahimmanci ga masu karɓar haske na Tbps 1.6. Tsarin yana haɗa laushin CMP don rage tsatsa a saman zuwa Ra <0.1 nm, yana haɓaka ingancin haɗin gwiwa da 40%.

4. Na'urori masu auna MEMS
• Na'urorin auna saurin gudu: Wafers ɗin silicon 25 μm suna cimma SNR >85 dB (idan aka kwatanta da 75 dB ga wafers 50 μm) ta hanyar ƙara yawan ƙarfin motsawar da aka yi. Tsarin niƙa mai kusurwa biyu yana rama yanayin damuwa, yana tabbatar da raguwar <0.5% na ƙarfin motsi sama da -40°C zuwa 125°C. Aikace-aikacen sun haɗa da gano haɗarin mota da bin diddigin motsi na AR/VR.

• Na'urorin auna matsin lamba: Rage gudu zuwa 40 μm yana ba da damar auna ma'aunin sanduna 0-300 tare da <0.1% FS hysteresis. Ta amfani da haɗin gilashi na ɗan lokaci (masu ɗaukar gilashi), tsarin yana hana karyewar wafer yayin sassaka bayan gida, yana cimma juriyar <1 μm ga na'urorin aunawa na IoT na masana'antu.

• Haɗin gwiwa na Fasaha: Kayan aikin rage wafer ɗinmu suna haɗa niƙa na inji, CMP, da kuma etching na plasma don magance ƙalubalen kayan aiki daban-daban (Si, SiC, Sapphire). Misali, GaN-on-SiC yana buƙatar niƙa mai haɗaka (tayoyin lu'u-lu'u + plasma) don daidaita tauri da faɗaɗa zafi, yayin da na'urori masu auna MEMS suna buƙatar ƙaiƙayin saman ƙasa da nm 5 ta hanyar goge CMP.

• Tasirin Masana'antu: Ta hanyar ba da damar wafers masu siriri da inganci, wannan fasaha tana haifar da sabbin abubuwa a cikin kwakwalwan AI, na'urorin 5G mmWave, da na'urorin lantarki masu sassauƙa, tare da juriyar TTV <0.1 μm don nunin da za a iya naɗewa da kuma <0.5 μm don na'urori masu auna firikwensin LiDAR na mota.

Ayyukan XKH

1. Magani na Musamman
Tsarin ɗaki mai girman inci 4-12 tare da loda/saukewa ta atomatik.
Tallafin Magungunan Doping: Girke-girke na musamman don lu'ulu'u masu ɗauke da Er/Yb da wafers ɗin InP/GaAs.

2. Tallafi daga ƙarshe zuwa ƙarshe
Tsarin Ci Gaba: Gwaji kyauta yana gudana tare da ingantawa.
Horarwa ta Duniya: Taron bita na fasaha kowace shekara kan gyara da magance matsaloli.

3. Sarrafa Kayayyaki Da Yawa
SiC: Wafer yana rage gudu zuwa 100 μm tare da Ra <0.1 nm.
Sapphire: Kauri 50μm don tagogi na laser UV (transmittance >92% @ 200 nm).

4. Ayyukan Ƙara Darajar
Kayan Amfani: Tayoyin lu'u-lu'u (2000+ wafers/rai) da slurries na CMP.

Kammalawa

Wannan kayan aikin rage wafer yana ba da daidaito a masana'antu, sauƙin amfani da kayan aiki da yawa, da kuma sarrafa kansa mai wayo, wanda hakan ya sa ya zama dole don haɗakar 3D da na'urorin lantarki masu ƙarfi. Ayyuka masu cikakken tsari na XKH - daga keɓancewa zuwa bayan sarrafawa - tabbatar da cewa abokan ciniki sun sami ingantaccen farashi da kyakkyawan aiki a masana'antar semiconductor.