Substrate
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Indium Antimonide (InSb) wafers N nau'in P nau'in Epi shirye unndoped Te doped ko Ge doped 2inch 3inch 4inch kauri Indium Antimonide (InSb) wafers
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SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
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Sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY Hanyar da za a iya daidaitawa
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GaAs high-power epitaxial wafer substrate gallium arsenide wafer ikon Laser tsayin tsayin 905nm don maganin likitancin Laser
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GaAs Laser epitaxial wafer 4 inch 6 inch VCSEL tsaye ramin filaye watsi Laser zangon 940nm guda ɗaya
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2inch 3inch 4inch InP epitaxial wafer substrate APD mai gano haske don sadarwar fiber optic ko LiDAR
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zoben sapphire da aka yi da kayan sapphire na roba Mai haske da taurin Mohs na musamman na 9
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2 inch Sic silicon carbide substrate 6H-N Nau'in 0.33mm 0.43mm polishing mai gefe biyu High thermal conductivity low ikon amfani
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zoben sapphire zoben duk-sapphire gabaɗaya an ƙera shi daga sapphire kayan aikin sapphire na zahiri.
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Sapphire ingot dia 4inch × 80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens Babban bayyanannen Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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SiC substrate 3inch 350um kauri HPSI nau'in Firayim Grade dummmy grade