Substrate
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InSb wafer mai inci 2 mai inci 3 wanda ba a taɓa yin amfani da shi ba, nau'in Ntype P 111 100 don Masu Gano Infrared
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Wafers na Indium Antimonide (InSb) nau'in N nau'in P Epi wanda aka shirya ba tare da an cire shi ba Te wanda aka yi wa allura ko Ge wanda aka yi wa allura mai inci 2, inci 3, kauri inci 4 Indium Antimonide (InSb)
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SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
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sapphire ingot 3in 4in 6in Hanyar Monocrystal CZ KY Mai iya gyarawa
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Sic silicon carbide substrate mai inci 2 6H-N Type 0.33mm 0.43mm gogewa mai gefe biyu Babban ƙarfin lantarki mai zafi ƙarancin amfani da wutar lantarki
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GaAs babban ƙarfin epitaxial wafer substrate gallium arsenide wafer wafer ikon laser tsawon rai 905nm don maganin laser
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Wafer ɗin laser na GaAs mai inci 4, inci 6, VCSEL mai tsayi, tsawon hasken laser mai tsayi 940nm mahaɗin guda ɗaya
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Na'urar gano haske ta APD mai inci 2, inci 3, inci 4, mai gano haske ta APD don sadarwa ta fiber optic ko LiDAR
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Zoben sapphire da aka yi da kayan sapphire na roba Mai haske kuma mai iya daidaitawa Taurin Mohs na 9
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Zoben sapphire mai launin shuɗi mai haske an yi shi da saffir, an yi shi da saffir, kayan sapphire masu haske da aka yi da dakin gwaje-gwaje.
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Ingot dia 4inch × 80mm Monocrystalline Al2O3 99.999% Crystal Guda ɗaya
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Ruwan tabarau na Sapphire Prism Babban haske Al2O3 BK7 JGS1 JGS2 Kayan gani na gani