Substrate
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6 a cikin Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
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SiC Ingot 4H nau'in Dia 4inch 6inch Kauri 5-10mm Bincike / Dummy Grade
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6inch sapphire Boule sapphire blank crystal al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Nau'in Babban Taurin Lalacewa Juriya na Firayim Matsayi
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2inch Silicon Carbide Wafer 6H-N Nau'in Babban Matsayin Bincike Grade Dummy Grade 330μm 430μm Kauri
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2inch silicon carbide substrate 6H-N diamita mai gefe biyu mai gogewa 50.8mm matakin bincike na samarwa
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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SiC substrate P-nau'in 4H/6H-P 3C-N 4inch tare da kauri na 350um Production sa Dummy sa
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4H/6H-P 6inch SiC wafer Zero matakin MPD Samar da Grade Dummy Grade
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P-nau'in SiC wafer 4H/6H-P 3C-N 6inch kauri 350 μm tare da Farko Flat Orientation
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Tsarin TVG akan quartz sapphire BF33 wafer Gilashin wafer naushi
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Single Crystal Silicon Wafer Si Substrate Nau'in N/P Zaɓaɓɓen Silicon Carbide Wafer