Na'urar gano haske ta APD mai inci 2, inci 3, inci 4, mai gano haske ta APD don sadarwa ta fiber optic ko LiDAR

Na'urar gano haske ta APD mai inci 2 mai inci 3 inci 4 mai inci 3 don sadarwa ta fiber optic ko LiDAR Hoton da aka nuna

Takaitaccen Bayani:

Substrate na epitaxial na InP shine tushen kayan ƙera APD, yawanci kayan semiconductor ne da aka ajiye a kan substrate ta hanyar fasahar haɓaka epitaxial. Kayan da aka saba amfani da su sun haɗa da silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), da sauransu, tare da kyawawan halayen photoelectric. Na'urar gano hoto ta APD wani nau'in na'urar gano hoto ne na musamman wanda ke amfani da tasirin photoelectric na avalanche don haɓaka siginar ganowa. Lokacin da photons suka faru akan APD, ana samar da nau'ikan ramuka na electron-hole. Haɓaka waɗannan masu ɗaukar hoto a ƙarƙashin aikin filin lantarki na iya haifar da ƙirƙirar ƙarin masu ɗaukar hoto, "tasirin avalanche", wanda ke ƙara yawan fitowar wutar lantarki sosai.
Wafers na Epitaxial da MOCvD ke nomawa sune abubuwan da ake amfani da su wajen amfani da diode na gano zaftarewar dusar ƙanƙara. An shirya Layer ɗin sha ta hanyar kayan U-InGaAs tare da yin amfani da doping na baya <5E14. Layer ɗin aiki zai iya amfani da InP ko InAlAslayer. InP epitaxial substrate shine kayan aiki na asali don ƙera APD, wanda ke ƙayyade aikin na'urar gano gani. APD photodetector wani nau'in na'urar gano haske ne mai yawan hankali, wanda ake amfani da shi sosai a fannin sadarwa, ji da kuma ɗaukar hoto.

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Siffofi

Babban fasalulluka na takardar epitaxial na laser InP sun haɗa da:

1. Halayen gibin band: InP yana da kunkuntar gibin band, wanda ya dace da gano hasken infrared mai tsawon zango, musamman a cikin kewayon tsayin tsayi na 1.3μm zuwa 1.5μm.
2. Aikin gani: Fim ɗin epitaxial na InP yana da kyakkyawan aikin gani, kamar ƙarfin haske da ingancin kwantum na waje a tsayin tsayi daban-daban. Misali, a 480 nm, ƙarfin haske da ingancin kwantum na waje sune 11.2% da 98.8%, bi da bi.
3. Tsarin jigilar kaya: InP nanoparticles (NPs) suna nuna halayen ruɓewa mai faɗi biyu yayin haɓakar epitaxial. Lokacin ruɓewa mai sauri ana danganta shi da allurar mai ɗaukar kaya a cikin layin InGaAs, yayin da lokacin ruɓewa mai jinkirin yana da alaƙa da sake haɗa mai ɗaukar kaya a cikin InP NPs.
4. Halayen zafin jiki mai yawa: Kayan rijiyar AlGaInAs/InP quantum yana da kyakkyawan aiki a babban zafin jiki, wanda zai iya hana kwararar ruwa yadda ya kamata da kuma inganta halayen zafin jiki mai yawa na laser.
5. Tsarin ƙera: Ana shuka zanen gado na InP epitaxial akan substrate ta hanyar amfani da fasahar molecular beam epitaxy (MBE) ko fasahar adana tururin ƙarfe-organic chemical deposition (MOCVD) don cimma fina-finai masu inganci.
Waɗannan halaye suna sa wafers ɗin epitaxial na laser na InP su sami mahimman aikace-aikace a cikin sadarwa ta fiber optic, rarraba maɓallin quantum da gano na'urar gani daga nesa.

Babban amfani da Allunan epitaxial na Laser InP sun haɗa da:

1. Photonics: Ana amfani da na'urorin gano haske na InP da na'urorin gano haske sosai a fannin sadarwa ta gani, cibiyoyin bayanai, hoton infrared, na'urorin gano haske, na'urorin gano haske na 3D da kuma LiDAR.

2. Sadarwa: Kayan InP suna da amfani mai mahimmanci wajen haɗa manyan na'urorin laser masu tsayin daka na silicon, musamman a cikin sadarwa ta fiber optic.

3. Na'urorin Laser na Infrared: Amfani da na'urorin Laser na kwantum da aka yi amfani da su a cikin InP a cikin tsakiyar infrared band (kamar microns 4-38), gami da na'urar gano iskar gas, gano fashewa da kuma hoton infrared.

4. Silicon photonics: Ta hanyar fasahar haɗakarwa iri-iri, ana canja wurin InP laser zuwa wani abu da aka yi da silicon don samar da dandamalin haɗakar silicon optoelectronic mai aiki da yawa.

5. Na'urorin Laser masu inganci: Ana amfani da kayan InP don ƙera na'urorin Laser masu aiki sosai, kamar na'urorin Laser transistor na InGaAsP-InP masu tsawon microns 1.5.

XKH tana ba da wafers na musamman na InP epitaxial tare da tsari da kauri daban-daban, wanda ya shafi aikace-aikace iri-iri kamar sadarwa ta gani, na'urori masu auna firikwensin, tashoshin tushe na 4G/5G, da sauransu. Ana ƙera samfuran XKH ta amfani da kayan aikin MOCVD na zamani don tabbatar da babban aiki da aminci. Dangane da dabaru, XKH tana da nau'ikan hanyoyin tushe na ƙasashen duniya daban-daban, tana iya sarrafa adadin oda cikin sauƙi, kuma tana ba da ayyuka masu ƙima kamar rage nauyi, rarrabawa, da sauransu. Ingancin hanyoyin isarwa yana tabbatar da isarwa akan lokaci da kuma biyan buƙatun abokin ciniki don inganci da lokutan isarwa. Bayan isowa, abokan ciniki za su iya samun cikakken tallafin fasaha da sabis bayan siyarwa don tabbatar da cewa an yi amfani da samfurin cikin sauƙi.