Substrate
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Wafer mai inci 12 mai girman inci 4H-SiC don gilashin AR
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Kayan Gudanar da Zafin Jiki na Diamond-Copper
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Wafer na HPSI SiC ≥90% Matsayin Canja wurin gani don Gilashin AI/AR
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Gilashin Ar Mai Tsabtace-tsaftace Mai Rufewa Mai Rufe-rufe (SiC)
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Wafers na Epitaxial 4H-SiC don MOSFETs masu ƙarfin lantarki mai matuƙar girma (100–500 μm, inci 6)
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SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon
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Sapphire Wafer Blank High Purity Raw Sapphire Substrate don Sarrafawa
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Crystal Iri Mai Murabba'i na Sapphire - Substrate Mai Daidaita Daidaito Don Girman Sapphire Na Roba
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Silicon Carbide (SiC) Substrate Guda Ɗaya – Wafer 10×10mm
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Wafer ɗin HPSI SiC mai siffar 4H-N 6H-P 3C-N SiC mai siffar 4H-N don MOS ko SBD
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Wafer ɗin Epitaxial na SiC don Na'urorin Wutar Lantarki - 4H-SiC, nau'in N, ƙarancin lahani mai yawa
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4H-N Type SiC Epitaxial Wafer Babban Voltage Mai Yawan Mita Mai Yawan Mota