Wafer na HPSI SiC ≥90% Matsayin Canja wurin gani don Gilashin AI/AR

Wafer HPSI SiC ≥90% Matsayin Canzawa na gani don Gilashin AI/AR Hoton da aka Fito

Takaitaccen Bayani:

Sigogi	Matsayi	Substrate mai inci 4	Ƙasa mai inci 6
Diamita	Aji Z / Aji D	99.5 mm – 100.0 mm	149.5 mm – 150.0 mm
Nau'in Poly	Aji Z / Aji D	4H	4H
Kauri	Matsayin Z	500 μm ± 15 μm	500 μm ± 15 μm
Kauri	Daraja ta D	500 μm ± 25 μm	500 μm ± 25 μm
Hanyar Wafer	Aji Z / Aji D	A kan axis: <0001> ± 0.5°	A kan axis: <0001> ± 0.5°
Yawan Micropipe	Matsayin Z	≤ 1 cm²	≤ 1 cm²
Yawan Micropipe	Daraja ta D	≤ 15 cm²	≤ 15 cm²
Resistiveness	Matsayin Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Resistiveness	Daraja ta D	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

Aika mana imel

Siffofi

Babban Gabatarwa: Matsayin Wafers na HPSI SiC a cikin Gilashin AI/AR

Wafers ɗin Silicon Carbide na HPSI (High-Purity Semi-Insulating) Wafers ne na musamman waɗanda aka siffanta su da juriya mai yawa (>10⁹ Ω·cm) da ƙarancin lahani. A cikin gilashin AI/AR, galibi suna aiki azaman babban kayan substrate don ruwan tabarau na jagora mai haske, suna magance matsalolin da ke da alaƙa da kayan gani na gargajiya dangane da sirara da haske, wargaza zafi, da aikin gani. Misali, gilashin AR da ke amfani da ruwan tabarau na jagora na SiC na iya cimma filin gani mai faɗi (FOV) na 70°–80°, yayin da rage kauri na layin ruwan tabarau ɗaya zuwa 0.55mm kawai da nauyi zuwa 2.7g kawai, wanda ke ƙara jin daɗin sakawa da nutsewa a gani sosai.

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Muhimman Halaye: Yadda Kayan SiC ke Ƙarfafa Tsarin Gilashin AI/AR

Babban Ingancin Haske da Ingantaccen Ayyukan gani

Ma'aunin haske na SiC (2.6–2.7) ya kusan kashi 50% sama da na gilashin gargajiya (1.8–2.0). Wannan yana ba da damar tsarin jagorar raƙuman ruwa ya fi siriri kuma mafi inganci, yana faɗaɗa FOV sosai. Babban ma'aunin haske kuma yana taimakawa wajen danne "tasirin bakan gizo" wanda aka saba gani a cikin jagororin raƙuman ruwa masu canzawa, yana inganta tsarkin hoto.

Ƙarfin Gudanar da Zafin Jiki na Musamman

Tare da ƙarfin wutar lantarki mai ƙarfi har zuwa 490 W/m·K (kusa da na jan ƙarfe), SiC na iya wargaza zafi da aka samar da shi ta hanyar na'urorin nuni na Micro-LED cikin sauri. Wannan yana hana lalacewar aiki ko tsufa na na'urar saboda yawan zafin jiki, yana tabbatar da tsawon rayuwar baturi da kwanciyar hankali mai yawa.

Ƙarfin Inji da Dorewa

SiC yana da taurin Mohs na 9.5 (na biyu bayan lu'u-lu'u), yana ba da juriya ta musamman ga karce, wanda hakan ya sa ya dace da gilashin da ake yawan amfani da su. Ana iya sarrafa taurin saman sa zuwa Ra < 0.5 nm, wanda ke tabbatar da ƙarancin asara da kuma watsa haske iri ɗaya a cikin jagororin raƙuman ruwa.

Daidaita Kadarorin Wutar Lantarki

Tsarin juriya na HPSI SiC (>10⁹ Ω·cm) yana taimakawa wajen hana tsangwama ga sigina. Hakanan yana iya zama kayan aikin wutar lantarki mai inganci, yana inganta kayan sarrafa wutar lantarki a cikin gilashin AR.

Umarnin Aikace-aikacen Farko

Babban Abubuwan gani na gani don Gilashin AI/ARs

Ruwan tabarau na Jagoran Waveguide mai bambanci: Ana amfani da ƙananan SiC don ƙirƙirar jagororin raƙuman gani masu siriri waɗanda ke tallafawa manyan FOV da kawar da tasirin bakan gizo.
Faranti da Prisms na Tagogi: Ta hanyar yankewa da gogewa na musamman, ana iya sarrafa SiC zuwa tagogi masu kariya ko prism na gani don gilashin AR, yana haɓaka watsa haske da juriya ga lalacewa.

Aikace-aikacen da aka faɗaɗa a wasu fannoni

Lantarki Mai Lantarki: Ana amfani da shi a cikin yanayi mai yawan mita da ƙarfi kamar sabbin inverters na motocin makamashi da sarrafa motocin masana'antu.
Na'urorin hangen nesa na Quantum: Yana aiki azaman mai masaukin cibiyoyin launi, ana amfani da shi a cikin abubuwan da aka yi amfani da su don sadarwa ta kwantum da na'urorin ji.

Kwatanta Takamaiman Bayanin Substrate na HPSI SiC Inci 4 & Inci 6

Sigogi	Matsayi	Substrate mai inci 4	Ƙasa mai inci 6
Diamita	Aji Z / Aji D	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Nau'in Poly	Aji Z / Aji D	4H	4H
Kauri	Matsayin Z	500 μm ± 15 μm	500 μm ± 15 μm
Kauri	Daraja ta D	500 μm ± 25 μm	500 μm ± 25 μm
Hanyar Wafer	Aji Z / Aji D	A kan axis: <0001> ± 0.5°	A kan axis: <0001> ± 0.5°
Yawan Micropipe	Matsayin Z	≤ 1 cm²	≤ 1 cm²
Yawan Micropipe	Daraja ta D	≤ 15 cm²	≤ 15 cm²
Resistiveness	Matsayin Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Resistiveness	Daraja ta D	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
Tsarin Farko na Falo	Aji Z / Aji D	(10-10) ± 5.0°	(10-10) ± 5.0°
Tsawon Babba Mai Lebur	Aji Z / Aji D	32.5 mm ± 2.0 mm	Notch
Tsawon Lebur na Biyu	Aji Z / Aji D	18.0 mm ± 2.0 mm	-
Keɓewa a Gefen	Aji Z / Aji D	3 mm	3 mm
LTV / TTV / Bow / Warp	Matsayin Z	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
LTV / TTV / Bow / Warp	Daraja ta D	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
Rashin hankali	Matsayin Z	Ra na Poland ≤ 1 nm / CMP Ra ≤ 0.2 nm	Ra na Poland ≤ 1 nm / CMP Ra ≤ 0.2 nm
Rashin hankali	Daraja ta D	Ra na Poland ≤ 1 nm / CMP Ra ≤ 0.2 nm	Ra na Poland ≤ 1 nm / CMP Ra ≤ 0.5 nm
Fashewar Edge	Daraja ta D	Yankin da aka tara ≤ 0.1%	Tsawon jimilla ≤ 20 mm, guda ɗaya ≤ 2 mm
Yankunan da aka yi da polytype	Daraja ta D	Yankin da aka tara ≤ 0.3%	Yankin da aka tara ≤ 3%
Abubuwan da ke cikin Carbon na gani	Matsayin Z	Yankin da aka tara ≤ 0.05%	Yankin da aka tara ≤ 0.05%
Abubuwan da ke cikin Carbon na gani	Daraja ta D	Yankin da aka tara ≤ 0.3%	Yankin da aka tara ≤ 3%
Karce-karcen saman silicon	Daraja ta D	An yarda da 5, kowanne ≤1mm	Tsawon jimilla ≤ 1 x diamita
Edge Chips	Matsayin Z	Ba a yarda da shi ba (faɗi da zurfin ≥0.2mm)	Ba a yarda da shi ba (faɗi da zurfin ≥0.2mm)
Edge Chips	Daraja ta D	An yarda da 7, kowanne ≤1mm	An yarda da 7, kowanne ≤1mm
Rushewar Sukurori na Zaren	Matsayin Z	-	≤ 500 cm²
Marufi	Aji Z / Aji D	Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya	Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya

Ayyukan XKH: Haɗaɗɗen Kayan Aiki da Ƙarfin Keɓancewa

Kamfanin XKH yana da damar haɗa kai tsaye daga kayan aiki zuwa wafers da aka gama, wanda ya ƙunshi dukkan sarkar girma na SiC substrate, yankewa, gogewa, da sarrafa su na musamman. Manyan fa'idodin sabis sun haɗa da:

Bambancin Kayan Aiki:Za mu iya samar da nau'ikan wafer iri-iri kamar nau'in 4H-N, nau'in 4H-HPSI, nau'in 4H/6H-P, da nau'in 3C-N. Ana iya daidaita juriya, kauri, da yanayin daidaitawa bisa ga buƙatu.
;Gyara Girman Mai Sauƙi:Muna tallafawa sarrafa wafer daga diamita na inci 2 zuwa inci 12, kuma muna iya sarrafa tsare-tsare na musamman kamar murabba'i (misali, 5x5mm, 10x10mm) da kuma prism marasa tsari.
Sarrafa Daidaiton Inganci na gani:Ana iya kiyaye bambancin kauri na Wafer (TTV) a <1μm, da kuma rashin kauri a saman Ra < 0.3 nm, wanda zai cika buƙatun matakin nano-level na na'urorin jagorar raƙuman ruwa.
Martanin Kasuwa Mai Sauri:Tsarin kasuwanci mai haɗaka yana tabbatar da ingantaccen sauyi daga bincike da ci gaba zuwa samar da kayayyaki da yawa, yana tallafawa komai daga tabbatar da ƙananan kayayyaki zuwa jigilar kayayyaki masu yawa (lokacin jagora yawanci kwanaki 15-40).

Tambayoyin da ake yawan yi game da Wafer na HPSI SiC

T1: Me yasa HPSI SiC ake ɗaukarsa a matsayin kayan da ya dace don ruwan tabarau na AR?
A1: Babban ma'aunin haskensa (2.6–2.7) yana ba da damar sirara da ingantaccen tsarin jagorar raƙuman ruwa waɗanda ke tallafawa babban filin gani (misali, 70°–80°) yayin da yake kawar da "tasirin bakan gizo".
T2: Ta yaya HPSI SiC ke inganta sarrafa zafi a cikin gilashin AI/AR?
A2: Tare da ƙarfin wutar lantarki mai zafi har zuwa 490 W/m·K (kusa da jan ƙarfe), yana kawar da zafi daga abubuwa kamar Micro-LEDs yadda ya kamata, yana tabbatar da aiki mai kyau da tsawon rai na na'urar.
T3: Waɗanne fa'idodi ne na dorewa HPSI SiC ke bayarwa ga gilashin da ake iya sawa?
A3: Taurinsa na musamman (Mohs 9.5) yana ba da juriya mai kyau ga karce, wanda hakan ya sa ya daɗe sosai don amfani da shi a kowace rana a cikin gilashin AR na masu amfani.