Substrate
-
Silicon Carbide SiC Ingot 6inch N nau'in Dummy/prime grade kauri ba zai iya musamman
-
SiC Ingot 4H-N nau'in Dummy 2inch 3inch 4inch 6inch kauri:＞10mm
-
HPSI SiC wafer dia: 3inch kauri: 350um ± 25 µm don Lantarki na Wutar Lantarki
-
3inch High tsafta Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
-
Sic Substrate Silicon Carbide Wafer 4H-N Nau'in Babban Taurin Lalacewa Juriya na Firayim Matsayi
-
2 inch 6H-N Silicon Carbide Substrate Sic Wafer Biyu Goyan bayan Babban Matsayin Matsayi
-
2inch Silicon Carbide Wafer 6H-N Nau'in Babban Matsayin Bincike Grade Dummy Grade 330μm 430μm Kauri
-
2inch silicon carbide substrate 6H-N diamita mai gefe biyu mai gogewa 50.8mm matakin bincike na samarwa
-
p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
-
SiC substrate P-nau'in 4H/6H-P 3C-N 4inch tare da kauri na 350um Production sa Dummy sa
-
4H/6H-P 6inch SiC wafer Zero matakin MPD Samar da Grade Dummy Grade
-
P-nau'in SiC wafer 4H/6H-P 3C-N 6inch kauri 350 μm tare da Farko Flat Orientation