Silicon carbide lu'u-lu'u yankan na'ura 4/6/8/12 inch SiC ingot aiki

Takaitaccen Bayani:

Silicon carbide Diamond Wire sabon na'ura ne wani nau'i na high-madaidaici aiki kayan aiki sadaukar da silicon carbide (SiC) ingot yanki, ta yin amfani da Diamond Wire Saw fasaha, ta hanyar high-gudun motsi lu'u-lu'u waya (line diamita 0.1 ~ 0.3mm) to SiC ingot Multi-waya yankan, don cimma high-daidaici, low-lalacewa wafer shiri. Ana amfani da kayan aiki da yawa a cikin SiC ikon semiconductor (MOSFET / SBD), na'urar mitar rediyo (GaN-on-SiC) da sarrafa kayan aikin optoelectronic, kayan aiki ne mai mahimmanci a cikin sarkar masana'antar SiC.

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Cikakken Bayani

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Ƙa'idar aiki:

1. Ƙaddamarwa na Ingot: SiC ingot (4H / 6H-SiC) an gyara shi a kan dandalin yankewa ta hanyar daidaitawa don tabbatar da daidaiton matsayi (± 0.02mm).

2. Lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lu'u lumun lumun lumun lumun lumun mbana mbandandan 10 ~ 30m/s.

3. Yanke ciyarwa: ana ciyar da ingot tare da jagorar da aka saita, kuma an yanke layin lu'u-lu'u a lokaci guda tare da layin layi daya (100 ~ 500 Lines) don samar da wafers da yawa.

4. Cooling da cire guntu: Fesa mai sanyaya (ruwan da aka lalata + ƙari) a cikin yanki na yanke don rage lalacewar zafi da cire kwakwalwan kwamfuta.

Mahimmin sigogi:

1. Yanke gudun: 0.2 ~ 1.0mm / min (dangane da jagorancin crystal da kauri na SiC).

2. Line tashin hankali: 20 ~ 50N (ma high sauki karya line, ma low rinjayar yankan daidaito).

3.Wafer kauri: misali 350 ~ 500μm, wafer iya isa 100μm.

Babban fasali:

(1) Yanke daidaito
Haƙuri mai kauri: ± 5μm (@350μm wafer), mafi kyau fiye da yankan turmi na al'ada (± 20μm).

Ƙarƙashin ƙasa: Ra <0.5μm (babu ƙarin niƙa da ake buƙata don rage adadin aiki na gaba).

Warpage: <10μm (rage wahalar gogewa na gaba).

(2) Ingantaccen aiki
Yanke-layi da yawa: yankan 100 ~ 500 guda a lokaci guda, haɓaka ƙarfin samarwa 3 ~ 5 sau (vs. Single line yanke).

Rayuwar layi: Layin lu'u-lu'u na iya yanke 100 ~ 300km SiC (dangane da taurin ingot da ingantaccen tsari).

(3) Ƙananan sarrafa lalacewa
Karyewar gefen: <15μm (yanke na al'ada>50μm), haɓaka yawan amfanin wafer.

Lalacewar ƙasa: <5μm (rage cire goge goge).

(4) Kare muhalli da tattalin arziki
Babu gurɓataccen turmi: Rage farashin zubar da ruwa idan aka kwatanta da yankan turmi.

Amfani da kayan aiki: Rage asarar <100μm/ abun yanka, adana albarkatun SiC.

Tasirin yankewa:

1. Wafer ingancin: babu macroscopic fasa a kan surface, 'yan microscopic lahani (controllable dislocation tsawo). Iya kai tsaye shigar da m polishing mahada, gajarta aiwatar kwarara.

2. Daidaitawa: kauri mai kauri na wafer a cikin tsari shine <± 3%, dace da samarwa ta atomatik.

3.Applicability: Taimakawa 4H / 6H-SiC ingot yankan, mai jituwa tare da nau'in sarrafawa / nau'in nau'i-nau'i.

Ƙayyadaddun fasaha:

Ƙayyadaddun bayanai	Cikakkun bayanai
Girma (L × W × H)	2500x2300x2500 ko siffanta
Girman girman kayan sarrafawa	4, 6, 8, 10, 12 inci na silicon carbide
Ƙunƙarar saman	Ra≤0.3u
Matsakaicin saurin yankewa	0.3mm/min
Nauyi	5,5t
Yanke matakan saitin tsari	≤30 matakai
Hayaniyar kayan aiki	≤80 dB
Karfe waya tashin hankali	0 ~ 110N (0.25 waya tashin hankali ne 45N)
Gudun wayar karfe	0 ~ 30m/S
Jimlar iko	50kw
Diamita na waya na Diamond	0.18mm
Ƙarshen flatness	≤0.05mm
Yankewa da raguwa	≤1% (sai dai dalilai na mutum, kayan silicon, layi, kiyayewa da sauran dalilai)

Ayyukan XKH:

XKH yana ba da sabis na tsarin duka na silicon carbide lu'u-lu'u yankan na'ura, ciki har da zaɓin kayan aiki (waya diamita / madaidaicin saurin waya), haɓaka tsari (yanke ingantaccen siga), wadatar kayan masarufi (wayar lu'u-lu'u, dabaran jagora) da tallafin tallace-tallace (kyauta kayan aiki, yankan ingantaccen bincike), don taimakawa abokan ciniki cimma babban yawan amfanin ƙasa (> 95%), ƙarancin farashi SiC wafer taro samarwa. Hakanan yana ba da abubuwan haɓakawa na musamman (kamar yankan-bakin ciki, lodi ta atomatik da saukewa) tare da lokacin jagorar mako 4-8.