SiC
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Silicon Carbide (SiC) Substrate Guda Ɗaya – Wafer 10×10mm
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Wafer ɗin HPSI SiC mai siffar 4H-N 6H-P 3C-N SiC mai siffar 4H-N don MOS ko SBD
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Wafer ɗin Epitaxial na SiC don Na'urorin Wutar Lantarki - 4H-SiC, nau'in N, ƙarancin lahani mai yawa
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4H-N Type SiC Epitaxial Wafer Babban Voltage Mai Yawan Mita Mai Yawan Mota
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Tsarkakken Inci 3 (Ba a taɓa shafa ba) Wafers ɗin Silicon Carbide Semi-Insulating Sic Substrates (HPSl)
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Wafer ɗin SiC mai inci 8 mai siffar 4H-N Silicon Carbide Dummy Research grade 500um kauri
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4H-N/6H-N SiC Wafer Reasearch samar da wani abu mai kama da Dia150mm silicon carbide substrate
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Wafer mai rufi, wafer mai sapphire, wafer mai silicon, wafer mai siC, inci 2, inci 4, kauri mai rufi na zinare 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
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Sic silicon carbide substrate mai inci 2 6H-N Type 0.33mm 0.43mm gogewa mai gefe biyu Babban ƙarfin lantarki mai zafi ƙarancin amfani da wutar lantarki
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SiC substrate 3in 350um kauri nau'in HPSI Prime Grade Dummy grade
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Silicon Carbide SiC Ingot 6inch N Type Dummy/prime grade kauri za a iya keɓance shi musamman