SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High tsafta Semi-Insulating) 4H/6H-P 3C -n nau'in 2 3 4 6 8inch samuwa

SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (Maɗaukakin Tsabtace Semi-Insulating) 4H/6H-P 3C -n nau'in 2 3 4 6 8inch akwai Hoton da aka Bayyana

Takaitaccen Bayani:

Muna ba da zaɓi daban-daban na wafers SiC (Silicon Carbide), tare da mai da hankali kan nau'in N-type 4H-N da 6H-N wafers, waɗanda suka dace don aikace-aikace a cikin ci-gaba na optoelectronics, na'urorin wuta, da yanayin zafi mai zafi. . Waɗannan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan sun san su da yanayin yanayin zafi, ingantaccen kwanciyar hankali na lantarki, da tsayin daka mai ban mamaki, yana mai da su cikakke don aikace-aikacen manyan ayyuka kamar na'urorin lantarki, na'urorin tuki na lantarki, injin inverters masu sabuntawa, da samar da wutar lantarki na masana'antu. Bugu da ƙari ga nau'in N-nau'in mu, muna kuma samar da nau'in P-type 4H/6H-P da 3C SiC wafers don buƙatu na musamman, ciki har da na'urori masu girma da RF, da kuma aikace-aikacen photonic. Wafers ɗinmu suna samuwa a cikin masu girma dabam daga inci 2 zuwa inci 8, kuma muna samar da hanyoyin da aka keɓance don biyan takamaiman buƙatun sassan masana'antu daban-daban. Don ƙarin bayani ko tambayoyi, da fatan za a iya tuntuɓar mu.

Aika mana imel

Cikakken Bayani

Tags samfurin

Kayayyaki

4H-N da 6H-N (Nau'in SiC Wafers)

Aikace-aikace:Ana amfani da shi da farko a cikin kayan lantarki, optoelectronics, da aikace-aikace masu zafi.

Tsawon Diamita:50.8 mm zuwa 200 mm.

Kauri:350 μm ± 25 μm, tare da kauri na zaɓi na 500 μm ± 25 μm.

Juriya:N-type 4H/6H-P: ≤ 0.1 Ω · cm (Z-grade), ≤ 0.3 Ω · cm (P-grade); N-nau'in 3C-N: ≤ 0.8 mΩ · cm (Z-grade), ≤ 1 mΩ · cm (P-grade).

Tashin hankali:Ra ≤ 0.2 nm (CMP ko MP).

Maɗaukakin Bututu (MPD):<1 ea/cm².

TTV: ≤ 10 μm ga duk diamita.

Warp: ≤ 30 μm (≤ 45 μm don wafers 8-inch).

Keɓewar Gefen:3 mm zuwa 6 mm dangane da nau'in wafer.

Marufi:Cassette mai yawa-wafer ko kwandon wafer guda ɗaya.

Otter samuwa girman 3inch 4inch 6inch 8inch

HPSI (Maɗaukakin Tsabtace SiC Wafers Semi-Insulating)

Aikace-aikace:Ana amfani da shi don na'urori masu buƙatar juriya mai ƙarfi da aiki mai ƙarfi, kamar na'urorin RF, aikace-aikacen hoto, da na'urori masu auna firikwensin.

Tsawon Diamita:50.8 mm zuwa 200 mm.

Kauri:Daidaitaccen kauri na 350 μm ± 25 μm tare da zaɓuɓɓuka don wafers mai kauri har zuwa 500 μm.

Tashin hankali:Ra ≤ 0.2 nm.

Maɗaukakin Bututu (MPD): ≤ 1 ea/cm².

Juriya:Babban juriya, yawanci ana amfani da shi a aikace-aikacen saɓo-hannun.

Warp: ≤ 30 μm (don ƙananan masu girma dabam), ≤ 45 μm don manyan diamita.

TTV: ≤ 10 μm.

Otter samuwa girman 3inch 4inch 6inch 8inch

4H-P,6 H-P&3C SiC wafer(P-type SiC Wafers)

Aikace-aikace:Da farko don wutar lantarki da na'urori masu ƙarfi.

Tsawon Diamita:50.8 mm zuwa 200 mm.

Kauri:350 μm ± 25 μm ko na musamman zažužžukan.

Juriya:Nau'in P-4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω · cm (P-grade).

Tashin hankali:Ra ≤ 0.2 nm (CMP ko MP).

Maɗaukakin Bututu (MPD):<1 ea/cm².

TTV: ≤ 10 μm.

Keɓewar Gefen:3 mm zuwa 6 mm.

Warp: ≤ 30 μm don ƙananan masu girma dabam, ≤ 45 μm don girma girma.

Otter samuwa girman 3inch 4inch 6inch5×5 10×10

Teburin Ma'aunin Bayanai na Bangaren

Dukiya	2 inci		3 inci		4 inci	6 inci	8 inci
Nau'in	4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI/ 6H-N/4H/6H-P/3C;		4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI//4H/6H-P/3C;	4H-N/HPSI/4H-SEMI
Diamita	50.8 ± 0.3 mm		76.2 ± 0.3mm		100 ± 0.3mm	150± 0.3mm	200 ± 0.3 mm
Kauri	330 ± 25 um		350 ± 25 ku		350 ± 25 ku	350 ± 25 ku	350 ± 25 ku
	350± 25um;		500± 25um		500± 25um	500± 25um	500± 25um
	ko kuma na musamman		ko kuma na musamman		ko kuma na musamman	ko kuma na musamman	ko kuma na musamman
Tashin hankali	Ra ≤ 0.2nm		Ra ≤ 0.2nm		Ra ≤ 0.2nm	Ra ≤ 0.2nm	Ra ≤ 0.2nm
Warp	≤30 ku		≤30 ku		≤30 ku	≤30 ku	≤45 ku
TTV	≤ 10 um		≤ 10 um		≤ 10 um	≤ 10 um	≤ 10 um
Scratch/Dige	CMP/MP
MPD	<1ea/cm-2	<1ea/cm-2		<1ea/cm-2		<1ea/cm-2		<1ea/cm-2
Siffar	Zagaye, Flat 16mm; Tsawon 22mm; NA Tsawon 30/32.5mm; NA Tsawon 47.5mm; KYAUTA; KYAUTA;
Bevel	45°, SEMI Spec; C siffar
Daraja	Matsayin samarwa don MOS & SBD; Matsayin bincike; Dummy grade, Seed wafer Grade
Jawabi	Diamita, kauri, fuskantarwa, ƙayyadaddun bayanai na sama ana iya keɓance su akan buƙatar ku

Aikace-aikace

·Kayan Wutar Lantarki

N irin SiC wafers suna da mahimmanci a cikin na'urorin lantarki masu ƙarfi saboda iyawarsu don ɗaukar babban ƙarfin lantarki da babban halin yanzu. Ana amfani da su da yawa a cikin masu canza wuta, masu juyawa, da tuƙi don masana'antu kamar makamashi mai sabuntawa, motocin lantarki, da sarrafa kansa na masana'antu.

· Optoelectronics
N nau'in SiC kayan, musamman don aikace-aikacen optoelectronic, ana amfani da su a cikin na'urori kamar diodes masu haske (LEDs) da diodes na laser. Maɗaukakin yanayin zafinsu da faffadan bandgap ya sa su dace don manyan na'urorin optoelectronic.

·Aikace-aikace Masu Zazzabi
4H-N 6H-N SiC wafers sun dace da yanayin zafi mai zafi, irin su na'urori masu auna firikwensin da na'urorin wutar lantarki da aka yi amfani da su a cikin sararin samaniya, motoci, da aikace-aikacen masana'antu inda zafin zafi da kwanciyar hankali a yanayin zafi mai girma yana da mahimmanci.

·Na'urorin RF
4H-N 6H-N SiC wafers ana amfani da su a cikin na'urorin mitar rediyo (RF) waɗanda ke aiki a cikin manyan mitoci. Ana amfani da su a cikin tsarin sadarwa, fasahar radar, da sadarwar tauraron dan adam, inda ake buƙatar ingantaccen ƙarfin lantarki da aiki.

·Aikace-aikacen Photonic
A cikin hotunan hoto, ana amfani da wafers na SiC don na'urori kamar masu gano hoto da masu daidaitawa. Abubuwan musamman na kayan suna ba shi damar yin tasiri a cikin samar da haske, daidaitawa, da ganowa a cikin tsarin sadarwa na gani da na'urorin hoto.

·Sensors
Ana amfani da wafers na SiC a cikin aikace-aikacen firikwensin iri-iri, musamman a wurare masu tsauri inda sauran kayan zasu iya kasawa. Waɗannan sun haɗa da zafin jiki, matsa lamba, da na'urori masu auna sinadarai, waɗanda ke da mahimmanci a fannoni kamar motoci, mai & iskar gas, da sa ido kan muhalli.

·Lantarki Motocin Tuƙi
Fasahar SiC tana taka muhimmiyar rawa a cikin motocin lantarki ta hanyar haɓaka inganci da aikin tsarin tuƙi. Tare da na'urori masu sarrafa wutar lantarki na SiC, motocin lantarki na iya samun mafi kyawun rayuwar batir, lokutan caji da sauri, da ingantaccen ƙarfin kuzari.

·Advanced Sensors da Photonic Converter
A cikin fasahar firikwensin ci gaba, ana amfani da wafers na SiC don ƙirƙirar ingantattun na'urori masu auna firikwensin don aikace-aikace a cikin injiniyoyi, na'urorin likitanci, da sa ido kan muhalli. A cikin masu canza hoto, ana amfani da kaddarorin SiC don ba da damar ingantacciyar jujjuyawar makamashin lantarki zuwa siginar gani, wanda ke da mahimmanci a cikin hanyoyin sadarwa da abubuwan haɗin Intanet mai sauri.

Tambaya&A

Q： Menene 4H a cikin 4H SiC?
A："4H" a cikin 4H SiC yana nufin tsarin crystal na silicon carbide, musamman nau'i mai hexagonal tare da yadudduka huɗu (H). "H" yana nuna nau'in nau'in polytype mai hexagonal, yana bambanta shi da sauran nau'ikan SiC kamar 6H ko 3C.

QMenene thermal conductivity na 4H-SiC?
A: Thermal watsin na 4H-SiC (Silicon Carbide) ne kamar 490-500 W / m · K a dakin zafin jiki. Wannan babban ƙarfin wutar lantarki yana sa ya zama manufa don aikace-aikace a cikin wutar lantarki da kuma yanayin zafi mai zafi, inda ingantaccen zafi yana da mahimmanci.

Na baya: Sapphire tube madaidaicin masana'anta m bututu Al2O3 crystal lalacewa-resistant high taurin EFG / KY daban-daban diamita polishing al'ada

Na gaba:

Ku rubuta sakonku anan ku aiko mana