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SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch

SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch Featured Image
  • SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
  • SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch

Takaitaccen Bayani:

Muna bayar da zaɓi iri-iri na wafers masu inganci na SiC (Silicon Carbide), tare da mai da hankali kan wafers na N-type 4H-N da 6H-N, waɗanda suka dace da aikace-aikace a cikin na'urorin lantarki na zamani, na'urorin wutar lantarki, da yanayin zafi mai yawa. Waɗannan wafers na nau'in N an san su da kyawun tasirin zafi, kwanciyar hankali na lantarki mai kyau, da kuma juriya mai ban mamaki, wanda hakan ya sa suka dace da aikace-aikacen da ke da inganci kamar na'urorin lantarki masu ƙarfi, tsarin tuƙi na motocin lantarki, inverters na makamashi mai sabuntawa, da kayayyakin wutar lantarki na masana'antu. Baya ga abubuwan da muke samarwa na nau'in N, muna kuma samar da wafers na P-type 4H/6H-P da 3C SiC don buƙatu na musamman, gami da na'urorin RF masu yawa da na'urori masu amfani da wutar lantarki, da kuma aikace-aikacen photonic. Wafers ɗinmu suna samuwa a girma dabam-dabam daga inci 2 zuwa inci 8, kuma muna samar da mafita na musamman don biyan takamaiman buƙatun sassa daban-daban na masana'antu. Don ƙarin bayani ko tambayoyi, da fatan za a iya tuntuɓar mu.


Siffofi

Kadarorin

4H-N da 6H-N (Wafers SiC na nau'in N-N)

Aikace-aikace:Ana amfani da shi sosai a fannin lantarki, optoelectronics, da kuma amfani da shi a yanayin zafi mai yawa.

Nisan diamita:Daga 50.8 zuwa 200 mm.

Kauri:350 μm ± 25 μm, tare da kauri na zaɓi na 500 μm ± 25 μm.

Juriya:Nau'in N-nau'i 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade); Nau'in N-nau'i 3C-N: ≤ 0.8 mΩ·cm (Z-grade), ≤ 1 mΩ·cm (P-grade).

Taurin kai:Ra ≤ 0.2 nm (CMP ko MP).

Yawan Bututun Micro (MPD):< 1 kw/cm².

Tashar Talabijin ta TTV: ≤ 10 μm ga dukkan diamita.

Warp: ≤ 30 μm (≤ 45 μm ga wafers masu inci 8).

Keɓancewa na Gefen:Girman daga 3 mm zuwa 6 mm ya danganta da nau'in wafer.

Marufi:Kaset ɗin wafer mai yawa ko akwati mai wafer guda ɗaya.

Girman da ake da shi na Ohter inci 3, inci 4, inci 6, inci 8

HPSI (Mai Tsarkakewa Mai Tsabta Mai Tsabta Semi-Insulating SiC Wafers)

Aikace-aikace:Ana amfani da shi don na'urori masu buƙatar juriya mai ƙarfi da aiki mai karko, kamar na'urorin RF, aikace-aikacen photonic, da firikwensin.

Nisan diamita:Daga 50.8 zuwa 200 mm.

Kauri:Kauri na yau da kullun na 350 μm ± 25 μm tare da zaɓuɓɓuka don wafers masu kauri har zuwa 500 μm.

Taurin kai:Ra ≤ 0.2 nm.

Yawan Bututun Micro (MPD): ≤ 1 e/cm².

Juriya:Babban juriya, wanda aka saba amfani da shi a aikace-aikacen semi-insulating.

Warp: ≤ 30 μm (ga ƙananan girma), ≤ 45 μm ga manyan diamita.

Tashar Talabijin ta TTV: ≤ 10 μm.

Girman da ake da shi na Ohter inci 3, inci 4, inci 6, inci 8

4H-P、6H-P&3C Wafer ɗin SiC(Wafers na SiC na nau'in P)

Aikace-aikace:Musamman ga na'urori masu amfani da wutar lantarki da kuma na'urori masu yawan mita.

Nisan diamita:Daga 50.8 zuwa 200 mm.

Kauri:350 μm ± 25 μm ko zaɓuɓɓukan da aka keɓance.

Juriya:Nau'in P-4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade).

Taurin kai:Ra ≤ 0.2 nm (CMP ko MP).

Yawan Bututun Micro (MPD):< 1 kw/cm².

Tashar Talabijin ta TTV: ≤ 10 μm.

Keɓancewa na Gefen:Daga 3 zuwa 6 mm.

Warp: ≤ 30 μm ga ƙananan girma, ≤ 45 μm ga manyan girma.

Girman da ake samu na Ohter shine inci 3, inci 4, inci 65×5 10×10

Teburin Sigogi na Bayanai na Wani Bangare

Kadara

Inci 2

inci 3

inci 4

inci 6

inci 8

Nau'i

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

diamita

50.8 ± 0.3 mm

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 mm

Kauri

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um；

500±25um

500±25um

500±25um

500±25um

ko kuma an keɓance shi

ko kuma an keɓance shi

ko kuma an keɓance shi

ko kuma an keɓance shi

ko kuma an keɓance shi

Taurin kai

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Warp

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Karce/Haƙa

CMP/MP

MPD

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

Siffa

Zagaye, Lebur 16mm; Tsawon 22mm; Tsawon 30/32.5mm; Tsawon 47.5mm; KYAUTA; KYAUTA;

Bevel

45°, Semi-Siffofin; Siffar C

 Matsayi

Matsayin samarwa na MOS&SBD; Matsayin bincike; Matsayin karya, Matsayin wafer iri

Bayani

Diamita, Kauri, Gabatarwa, ƙayyadaddun bayanai da ke sama za a iya keɓance su bisa buƙatarku

 

Aikace-aikace

·Lantarki Mai Lantarki

Wafers na SiC na nau'in N suna da matuƙar muhimmanci a cikin na'urorin lantarki masu ƙarfi saboda ikonsu na jure babban ƙarfin lantarki da babban wutar lantarki. Ana amfani da su galibi a cikin masu canza wutar lantarki, inverters, da tuƙi na motoci ga masana'antu kamar makamashi mai sabuntawa, motocin lantarki, da sarrafa kansa na masana'antu.

· Injin lantarki
Ana amfani da kayan N na SiC na nau'in N, musamman don aikace-aikacen optoelectronic, a cikin na'urori kamar diodes masu fitar da haske (LEDs) da diodes na laser. Babban ƙarfin watsa zafi da kuma faɗin bandgip ɗinsu ya sa sun dace da na'urorin optoelectronic masu aiki sosai.

·Aikace-aikacen Zafin Jiki Mai Girma
Wafers ɗin 4H-N 6H-N SiC sun dace sosai da yanayin zafi mai yawa, kamar a cikin na'urori masu auna firikwensin da na'urorin wutar lantarki da ake amfani da su a fannin sararin samaniya, motoci, da aikace-aikacen masana'antu inda zubar da zafi da kwanciyar hankali a yanayin zafi mai yawa suke da mahimmanci.

·Na'urorin RF
Ana amfani da wafers na 4H-N 6H-N SiC a cikin na'urorin mitar rediyo (RF) waɗanda ke aiki a cikin kewayon mitar mai yawa. Ana amfani da su a cikin tsarin sadarwa, fasahar radar, da sadarwa ta tauraron dan adam, inda ake buƙatar ingantaccen aiki da ƙarfi.

·Aikace-aikacen Photonic
A cikin na'urorin photonics, ana amfani da wafers na SiC don na'urori kamar na'urorin gano haske da masu daidaita haske. Sifofin kayan na musamman suna ba shi damar yin tasiri a cikin samar da haske, daidaitawa, da ganowa a cikin tsarin sadarwa na gani da na'urorin daukar hoto.

·Na'urori masu auna sigina
Ana amfani da wafers na SiC a cikin nau'ikan na'urori masu auna firikwensin, musamman a cikin mawuyacin yanayi inda wasu kayan aiki na iya gazawa. Waɗannan sun haɗa da na'urori masu auna zafin jiki, matsin lamba, da sinadarai, waɗanda suke da mahimmanci a fannoni kamar motoci, mai da iskar gas, da kuma sa ido kan muhalli.

·Tsarin Tuki na Motocin Lantarki
Fasahar SiC tana taka muhimmiyar rawa a cikin motocin lantarki ta hanyar inganta inganci da aikin tsarin tuƙi. Tare da na'urorin lantarki na SiC, motocin lantarki za su iya samun ingantaccen rayuwar batir, saurin caji, da kuma ingantaccen amfani da makamashi.

·Na'urori Masu Ci gaba da Masu Canza Photonic
A cikin fasahar firikwensin zamani, ana amfani da wafers na SiC don ƙirƙirar firikwensin masu inganci don aikace-aikace a cikin na'urorin robotic, na'urorin likitanci, da sa ido kan muhalli. A cikin masu canza photonic, ana amfani da kaddarorin SiC don ba da damar canza makamashin lantarki zuwa siginar gani mai inganci, wanda yake da mahimmanci a cikin sadarwa da kayayyakin intanet masu sauri.

Tambaya da Amsa

QMenene 4H a cikin 4H SiC?
A："4H" a cikin 4H SiC yana nufin tsarin lu'ulu'u na silicon carbide, musamman siffar hexagonal mai layuka huɗu (H). "H" yana nuna nau'in polytype hexagonal, yana bambanta shi da sauran polytypes na SiC kamar 6H ko 3C.

QMenene ma'aunin zafin jiki na 4H-SiC?
A:Tsarin wutar lantarki na 4H-SiC (Silicon Carbide) yana da kimanin 490-500 W/m·K a zafin ɗaki. Wannan babban ƙarfin wutar lantarki ya sa ya dace da amfani a cikin na'urorin lantarki masu amfani da wutar lantarki da kuma yanayin zafi mai yawa, inda watsawar zafi mai inganci yake da mahimmanci.

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