Tanderu Mai Girma na SiC Ingot don Babban Diamita SiC Crystal Hanyoyin TSSG/LPE

Takaitaccen Bayani:

Injin samar da wutar lantarki mai amfani da silicon carbide ingot ingot ingot na XKH yana amfani da fasahar TSSG (Top-Seeded Solution Growth) da LPE (Liquid Phase Epitaxy) mafi shahara a duniya, waɗanda aka tsara musamman don haɓaka lu'ulu'u guda ɗaya na SiC mai inganci. Hanyar TSSG tana ba da damar haɓaka ingots mai girman inci 4-8 na 4H/6H-SiC ta hanyar daidaitaccen yanayin zafi da kuma sarrafa saurin ɗaga iri, yayin da hanyar LPE ke sauƙaƙe haɓakar yadudduka masu amfani da SiC epitaxial a ƙananan yanayin zafi, musamman ma ya dace da yadudduka masu kauri na epitaxial mai ƙarancin lahani. An yi amfani da wannan tsarin haɓakar ingot na silicon carbide na ruwa-lokaci a cikin samar da lu'ulu'u daban-daban na SiC, gami da nau'in 4H/6H-N da nau'in rufewa na 4H/6H-SEMI, yana ba da cikakkun mafita daga kayan aiki zuwa hanyoyin aiki.

Aika mana imel

Siffofi

Ka'idar Aiki

Babban ƙa'idar girmar ingot na silicon carbide mai ruwa-mataki ya ƙunshi narkar da kayan albarkatun ƙasa na SiC masu tsafta a cikin ƙarfe mai narke (misali, Si, Cr) a 1800-2100°C don samar da mafita mai cikewa, sannan sai a kula da haɓakar alkibla na lu'ulu'u guda ɗaya na SiC akan lu'ulu'u iri ta hanyar daidaitaccen yanayin zafi da daidaita supersaturation. Wannan fasaha ta dace musamman don samar da tsarki mai yawa (>99.9995%) lu'ulu'u guda ɗaya na 4H/6H-SiC tare da ƙarancin lahani (<100/cm²), tare da biyan buƙatun substrate masu tsauri don na'urorin lantarki masu ƙarfi da na'urorin RF. Tsarin girma na ruwa-mataki yana ba da damar sarrafa daidai nau'in watsa wutar lantarki na lu'ulu'u (nau'in N/P) da juriya ta hanyar ingantaccen tsarin samar da mafita da sigogin girma.

Babban Abubuwan da Aka Haɗa

1. Tsarin Crucible na Musamman: Graphite/Tantalum composite crucible mai tsarki, juriyar zafin jiki >2200°C, mai juriya ga lalata narkewar SiC.

2. Tsarin Dumama Yankuna Da Yawa: Haɗakar juriya/dumamawar da aka haɗa tare da daidaiton sarrafa zafin jiki na ±0.5°C (kewayon 1800-2100°C).

3. Tsarin Motsi Mai Daidaito: Ikon rufe madauki biyu don juyawa iri (0-50rpm) da ɗagawa (0.1-10mm/h).

4. Tsarin Kula da Yanayi: Kariyar argon/nitrogen mai tsafta, matsin lamba mai daidaitawa (0.1-1atm).

5. Tsarin Kula da Hankali: PLC+ sarrafa PC mai yawa tare da sa ido kan ci gaban haɗin gwiwa na ainihin lokaci.

6. Tsarin Sanyaya Mai Inganci: Tsarin sanyaya ruwa mai daraja yana tabbatar da dorewar aiki na dogon lokaci.

Kwatanta TSSG da LPE

Halaye	Hanyar TSSG	Hanyar LPE
Yanayin Girman Girma	2000-2100°C	1500-1800°C
Matsayin Girma	0.2-1mm/h	5-50μm/h
Girman Lu'ulu'u	Ingots 4-8 inci	Layer-epi 50-500μm
Babban Aikace-aikacen	Shirye-shiryen substrate	Na'urar lantarki mai suna epi-layer
Yawan Lalacewa	<500/cm²	<100/cm²
Nau'ikan Polytypes Masu Dacewa	4H/6H-SiC	4H/3C-SiC

Manhajoji Masu Mahimmanci

1. Lantarki Mai Lantarki: ƙananan inci 6 masu girman 4H-SiC don 1200V+ MOSFETs/diodes.

2. Na'urorin RF na 5G: Abubuwan SiC masu rufi na rabin-rufi don tashoshin tashar tushe.

3. Aikace-aikacen EV: Matakan epi masu kauri sosai (>200μm) don na'urori masu matakin mota.

4. Masu canza PV: Ƙananan ƙananan lahani suna ba da damar yin amfani da canjin da ya wuce kashi 99%.

Babban Amfanin

1. Fifikon Fasaha
1.1 Tsarin Hanyoyi Da Yawa Mai Haɗaka
Wannan tsarin girma na ingot na SiC mai ruwa-mataki yana haɗa fasahar girma ta TSSG da LPE ta hanyar kirkire-kirkire. Tsarin TSSG yana amfani da haɓakar mafita mai tushe tare da daidaitaccen narkewar narkewa da sarrafa saurin zafin jiki (ΔT≤5℃/cm), wanda ke ba da damar haɓaka daidaiton ingot na SiC mai girma-inci 4-8 tare da yawan amfanin ƙasa sau ɗaya na 15-20kg don lu'ulu'u 6H/4H-SiC. Tsarin LPE yana amfani da ingantaccen tsarin narkewa (tsarin gami na Si-Cr) da kuma sarrafa supersaturation (±1%) don haɓaka yadudduka masu kauri masu kauri tare da yawan lahani <100/cm² a yanayin zafi mai ƙarancin gaske (1500-1800℃).

1.2 Tsarin Kulawa Mai Hankali
An sanye shi da tsarin sarrafa ci gaban zamani na ƙarni na 4, wanda ya haɗa da:
• Kulawa da yanayin da ke cikin wurare daban-daban (tsakanin tsawon tsayin 400-2500nm)
• Gano matakin narkewa ta hanyar amfani da laser (±0.01mm daidai)
• Tsarin rufe madauri mai tushen CCD (<±1mm canjin yanayi)
• Inganta sigogin girma masu amfani da fasahar AI (15% na tanadin makamashi)

2. Fa'idodin Aikin Tsarin
2.1 Hanyar TSSG Ƙarfin Jiki
• Babban ƙarfin girma: Yana tallafawa girman lu'ulu'u har zuwa inci 8 tare da daidaiton diamita sama da kashi 99.5%.
• Mafi kyawun lu'ulu'u: Yawan tarwatsewa <500/cm², yawan bututun micro <5/cm²
• Daidaiton shan kwayoyi: <8% bambancin juriya na nau'in n (wafers mai inci 4)
• Ingantaccen ƙimar girma: Ana iya daidaitawa 0.3-1.2mm/h, 3-5× cikin sauri fiye da hanyoyin lokacin tururi

2.2 Hanyar LPE Ƙarfin Jiki
• Epitaxy mai ƙarancin lahani: Yawan yanayin hulɗa <1×10¹¹cm⁻²·eV⁻¹
• Daidaitaccen tsarin kauri: Layer epi-layer 50-500μm tare da bambancin kauri <±2%
• Ingancin ƙarancin zafin jiki: ƙasa da 300-500℃ fiye da hanyoyin CVD
• Ci gaban tsari mai rikitarwa: Yana tallafawa mahaɗar pn, manyan lattices, da sauransu.

3. Fa'idodin Ingantaccen Samarwa
3.1 Kula da Farashi
• Amfani da kayan amfanin gona kashi 85% (idan aka kwatanta da kashi 60% na al'ada)
• Rage amfani da makamashi da kashi 40% (idan aka kwatanta da HVPE)
• Lokacin aiki na kayan aiki kashi 90% (ƙirƙirar zamani tana rage lokacin aiki)

3.2 Tabbatar da Inganci
• 6σ tsarin sarrafawa (CPK>1.67)
• Gano lahani ta yanar gizo (ƙaddamar 0.1μm)
• Cikakken bin diddigin bayanai (ma'auni 2000+ na ainihin lokaci)

3.3 Ƙarfin daidaitawa
• Ya dace da nau'ikan 4H/6H/3C
• Ana iya haɓakawa zuwa kayan aiki na inci 12
• Yana tallafawa haɗin kai tsakanin SiC/GaN

4. Fa'idodin Aikace-aikacen Masana'antu
4.1 Na'urorin Wutar Lantarki
• Ƙananan abubuwan da ke da ƙarfin juriya (0.015-0.025Ω·cm) ga na'urorin 1200-3300V
• Substrates masu rufewa (>10⁸Ω·cm) don aikace-aikacen RF

4.2 Fasaha Mai tasowa
• Sadarwar Kwatancen: Ƙananan amo (1/f hayaniyar <-120dB)
• Muhalli mai matuƙar wahala: Lu'ulu'u masu jure wa radiation (lalacewa <5% bayan 1×10¹⁶n/cm²)

Ayyukan XKH

1. Kayan aiki na musamman: Tsarin tsarin TSSG/LPE da aka keɓance.
2. Horar da Tsari: Cikakkun shirye-shiryen horar da fasaha.
3. Tallafi bayan tallace-tallace: Amsar fasaha da kulawa 24/7.
4. Maganin Turnkey: Cikakken sabis daga shigarwa zuwa tabbatar da tsari.
5. Kayan Aiki: Akwai ƙananan sinadari/wafers na SiC inci 2-12.

Manyan fa'idodi sun haɗa da:
• Har zuwa ƙarfin girma na lu'ulu'u mai inci 8.
• Daidaiton juriya <0.5%.
• Lokacin aiki na kayan aiki >95%.
• Tallafin fasaha na awanni 24/7.