SiC Ingot Growth Furnace don Manyan Diamita SiC Crystal TSSG/LPE Hanyoyi

SiC Ingot Growth Furnace don Babban Diamita SiC Crystal TSSG/LPE Hannun Hoto

Takaitaccen Bayani:

XKH's ruwa-lokaci silicon carbide ingot girma tanderu ma'aikata TSSG-manyan duniya (Top-Seeded Magani Growth) da LPE (Liquid Phase Epitaxy), musamman tsara don high quality-SiC guda crystal girma. Hanyar TSSG tana ba da damar haɓaka 4-8 inch babban diamita 4H/6H-SiC ingots ta daidaitaccen yanayin zafin jiki da sarrafa saurin ɗaga iri, yayin da hanyar LPE ke sauƙaƙe haɓakar haɓakar matakan SiC epitaxial a ƙananan yanayin zafi, musamman dacewa da ƙarancin ƙarancin ƙarancin ƙarancin epitaxial yadudduka. An samu nasarar amfani da wannan tsarin haɓakar siliki carbide na ruwa-lokaci a cikin samar da masana'antu daban-daban na lu'ulu'u na SiC ciki har da nau'in 4H / 6H-N da nau'in insulating na 4H / 6H-SEMI, yana ba da cikakkiyar mafita daga kayan aiki zuwa matakai.

Aika mana imel

Siffofin

Ƙa'idar Aiki

Babban ka'idar ci gaban silicon carbide ingot na ruwa-lokaci ya haɗa da narkar da albarkatun SiC masu tsabta a cikin narkakken karafa (misali, Si, Cr) a 1800-2100 ° C don samar da cikakkun mafita, wanda ke biye da haɓakar jagorar ci gaban SiC guda lu'ulu'u akan lu'ulu'u iri ta madaidaiciyar yanayin zafin jiki da ka'idojin supersaturation. Wannan fasaha ta dace musamman don samar da tsafta mai tsafta (> 99.9995%) 4H/6H-SiC lu'ulu'u guda ɗaya tare da ƙarancin ƙarancin lahani (<100/cm²), saduwa da ƙaƙƙarfan buƙatun don kayan lantarki da na'urorin RF. Tsarin girma na ruwa-lokaci yana ba da damar sarrafa daidaitaccen nau'in kristal (nau'in N/P) da tsayayya ta hanyar ingantaccen abun da ke tattare da bayani da sigogin girma.

Abubuwan Mahimmanci

1. Tsarin Crucible na Musamman: High-tsaftataccen graphite / tantalum composite crucible, zazzabi juriya> 2200 ° C, resistant zuwa SiC narke lalata.

2. Multi-zone Heating System: Haɗewar juriya / ƙaddamar da dumama tare da daidaiton zafin jiki na ± 0.5 ° C (1800-2100 ° C kewayon).

3. Daidaitaccen Tsarin Motsi: Dual rufaffiyar madauki iko don juyawa iri (0-50rpm) da ɗagawa (0.1-10mm / h).

4. Tsarin Kula da Yanayin yanayi: Tsabtataccen argon / kariyar nitrogen, daidaitacce matsa lamba (0.1-1atm).

5. Intelligent Control System: PLC + masana'antu PC m iko tare da real-lokaci girma dubawa dubawa.

6. Ingantacciyar Tsarin Kulawa: Tsarin sanyaya ruwa mai ƙima yana tabbatar da kwanciyar hankali na dogon lokaci.

TSSG vs. Kwatanta LPE

Halaye	Hanyar TSSG	Hanyar LPE
Girman Girma	2000-2100 ° C	1500-1800 ° C
Yawan Girma	0.2-1mm/h	5-50μm/h
Girman Crystal	4-8 inch ingots	50-500μm epi-Layer
Babban Aikace-aikacen	Substrate shiri	Na'urar wutar lantarki epi-layers
Lalacewar Yawa	<500/cm²	<100/cm²
Dace da Polytypes	4H/6H-SiC	4H/3C-SiC

Maɓallin Aikace-aikace

1. Power Electronics: 6-inch 4H-SiC substrates don 1200V+ MOSFETs / diodes.

2. 5G RF Na'urorin: Semi-insulating SiC substrates don tushe tashar PAs.

3. EV Aikace-aikace: Ultra-kauri (> 200μm) epi-yadudduka ga mota-sa kayayyaki.

4. PV Inverters: Ƙananan ƙananan ƙananan ƙwayoyin cuta suna ba da damar> 99% ingantaccen juzu'i.

Babban Amfani

1. Matsayin Fasaha
1.1 Haɗaɗɗen Ƙirar Hanyoyi masu yawa
Wannan tsarin haɓakar ruwa-lokacin SiC ingot yana haɓaka fasahar haɓaka TSSG da LPE. Tsarin TSSG yana ɗaukar haɓakar haɓakar iri-iri tare da daidaitaccen narkewar narkewa da sarrafa yanayin zafin jiki (ΔT≤5 ℃ / cm), yana ba da damar haɓakar ci gaba na 4-8 inch manyan diamita SiC ingots tare da samari guda ɗaya na 15-20kg don lu'ulu'u na 6H/4H-SiC. Tsarin LPE yana amfani da ingantattun abubuwan ƙarfi (Si-Cr alloy tsarin) da kuma iko na supersaturation (± 1%) don girma high quality-kauri epitaxial yadudduka tare da lahani yawa <100/cm² a in mun gwada low yanayin zafi (1500-1800 ℃).

1.2 Tsarin Kula da hankali
An sanye shi da tsarin kula da haɓaka wayo na ƙarni na 4 wanda ke nuna:
• Multi-spectral in-wuri saka idanu (400-2500nm kewayon tsawon zango)
• Gano matakin narkewar tushen Laser (daidaitaccen ± 0.01mm)
• CCD tushen diamita rufaffiyar madauki iko (<± 1mm juyi)
• Haɓaka siginar haɓaka mai ƙarfin AI (15% ceton makamashi)

2. Tsari Ayyukan Amfani
2.1 Hanyar TSSG Ƙarfin Ƙarfi
• Ƙarfin girman girma: Yana goyan bayan girma har zuwa 8-inch crystal girma tare da> 99.5% diamita daidaituwa
• Maɗaukakin crystallinity: Ƙarfafa yawa <500/cm², ƙananan bututu <5/cm²
• Doping uniformity: <8% n-type resistivity bambance-bambancen (wafers 4-inch)
• Ingantaccen ƙimar girma: Daidaitacce 0.3-1.2mm/h, 3-5 × sauri fiye da hanyoyin tururi-lokaci

2.2 Hanyar LPE Ƙarfafa Ƙarfi
• Epitaxy mara-ƙananan lahani: Girman yanayin mu'amala <1×10¹¹cm⁻²·eV⁻¹
• Madaidaicin iko mai kauri: 50-500μm epi-layers tare da bambancin kauri <± 2%
• Ƙarfin zafin jiki: 300-500 ℃ ƙasa da matakan CVD
• Haɓakawa mai rikitarwa: Yana goyan bayan pn junctions, superlatices, da sauransu.

3. Samar da Ingantaccen Amfani
3.1 Kula da Kuɗi
• 85% amfani da albarkatun kasa (vs. 60% na al'ada)
40% rage yawan amfani da makamashi (idan aka kwatanta da HVPE)
• 90% uptime kayan aiki (tsari na yau da kullun yana rage lokacin raguwa)

3.2 Tabbatar da inganci
6σ sarrafa tsari (CPK>1.67)
• Gano lahani na kan layi (ƙudurin 0.1μm)
• Cikakkun bayanan da aka gano (2000+ ainihin-lokaci sigogi)

3.3 Ƙimar ƙima
• Mai dacewa da 4H/6H/3C polytypes
• Ana iya haɓakawa zuwa nau'ikan tsari na 12-inch
• Yana goyan bayan haɗin haɗin SiC/GaN

4. Amfanin Aikace-aikacen Masana'antu
4.1 Na'urorin Wutar Lantarki
• Ƙananan juriya (0.015-0.025Ω · cm) don na'urorin 1200-3300V
• Semi-insulating substrates (>10⁸Ω·cm) don aikace-aikacen RF

4.2 Fasaha masu tasowa
• Sadarwar juzu'i: Ƙaƙƙarfan ƙaramar amo (1/f amo <-120dB)
• Matsanancin mahalli: lu'ulu'u masu jurewa radiation (<5% lalacewa bayan 1 × 10¹⁶n/cm² sakawa a iska mai guba)

Ayyukan XKH

1. Kayan aiki na Musamman: Daidaitaccen tsarin tsarin TSSG / LPE.
2. Tsarin Horarwa: Cikakken shirye-shiryen horo na fasaha.
3. Tallafin bayan-tallace-tallace: 24 / 7 amsawar fasaha da kulawa.
4. Maɓallin Maɓalli: Cikakken sabis na bakan daga shigarwa don aiwatar da ingantaccen aiki.
5. Kayan Kaya: 2-12 inch SiC substrates/epi-wafers akwai.

Babban fa'idodin sun haɗa da:
• Har zuwa 8-inch crystal girma damar.
• Daidaiton juriya <0.5%.
• Lokacin kayan aiki>95%.
• 24/7 goyon bayan fasaha.