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SiC Epitaxial Wafer don Na'urorin Wuta - 4H-SiC, Nau'in N, Ƙarƙashin Ƙarfafawa

SiC Epitaxial Wafer don Na'urorin Wuta - 4H-SiC, Nau'in N, Hoton Ƙarfin Ƙarfin Ƙarfafawa
  • SiC Epitaxial Wafer don Na'urorin Wuta - 4H-SiC, Nau'in N, Ƙarƙashin Ƙarfafawa
  • SiC Epitaxial Wafer don Na'urorin Wuta - 4H-SiC, Nau'in N, Ƙarƙashin Ƙarfafawa
  • SiC Epitaxial Wafer don Na'urorin Wuta - 4H-SiC, Nau'in N, Ƙarƙashin Ƙarfafawa

Takaitaccen Bayani:

SiC Epitaxial Wafer yana cikin ainihin na'urori masu mahimmanci na zamani na zamani, musamman waɗanda aka tsara don aiki mai ƙarfi, ƙarami, da kuma yanayin zafi. Gajere don Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer ya ƙunshi babban inganci, siraren SiC epitaxial na bakin ciki wanda ya girma saman babban simin SiC. Amfani da fasaha na SiC Epitaxial Wafer yana haɓaka cikin sauri a cikin motocin lantarki, grids mai wayo, tsarin makamashi mai sabuntawa, da sararin samaniya saboda fifikon halayensa na zahiri da na lantarki idan aka kwatanta da wafers na tushen silicon na al'ada.


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Cikakken zane

SiC Epitaxial Wafer-4
SiC Epitaxial Wafer-6 - 副本

Gabatarwa

SiC Epitaxial Wafer yana cikin ainihin na'urori masu mahimmanci na zamani na zamani, musamman waɗanda aka tsara don aiki mai ƙarfi, ƙarami, da kuma yanayin zafi. Gajere don Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer ya ƙunshi babban inganci, siraren SiC epitaxial na bakin ciki wanda ya girma saman babban simin SiC. Amfani da fasaha na SiC Epitaxial Wafer yana haɓaka cikin sauri a cikin motocin lantarki, grids mai wayo, tsarin makamashi mai sabuntawa, da sararin samaniya saboda fifikon halayensa na zahiri da na lantarki idan aka kwatanta da wafers na tushen silicon na al'ada.

Ka'idodin Ƙirƙirar SiC Epitaxial Wafer

Ƙirƙirar SiC Epitaxial Wafer yana buƙatar tsari mai sarrafa tururi mai ƙarfi (CVD). Layin epitaxial yawanci ana girma akan siC na SiC monocrystalline ta amfani da iskar gas kamar silane (SiH₄), propane (C₃H₈), da hydrogen (H₂) a yanayin zafi sama da 1500°C. Wannan haɓakar haɓakar zafin jiki mai zafi yana tabbatar da kyakkyawan daidaituwar crystalline da ƙarancin lahani tsakanin Layer epitaxial da substrate.

Tsarin ya ƙunshi matakai masu mahimmanci da yawa:

  1. Substrate Shiri: Tushen SiC wafer ana tsabtace kuma an goge shi zuwa santsin atomic.

  2. Ci gaban CVD: A cikin ma'aunin tsafta mai tsafta, iskar gas suna amsawa don saka Layer SiC-crystal-crystal akan ma'aunin.

  3. Kula da Doping: An gabatar da nau'in N-type ko nau'in P-doping yayin epitaxy don cimma abubuwan da ake so na lantarki.

  4. Dubawa da Ma'auni: Ana amfani da microscopy na gani, AFM, da X-ray diffraction don tabbatar da kauri na Layer, maida hankali na doping, da ƙarancin lahani.

Kowane SiC Epitaxial Wafer ana sa ido a hankali don kiyaye juriya cikin kauri iri ɗaya, shimfidar ƙasa, da juriya. Ikon daidaita waɗannan sigogi yana da mahimmanci ga MOSFETs masu ƙarfi, Schottky diodes, da sauran na'urorin wuta.

Ƙayyadaddun bayanai

Siga Ƙayyadaddun bayanai
Categories Kimiyyar Kayayyakin Kayayyakin Kayayyakin Kayayyakin Kayayyakin Kaya, Rubutun Crystal Single
Polytype 4H
Doping Nau'in N
Diamita 101 mm
Haƙuri na Diamita ± 5%
Kauri 0.35 mm
Hakuri mai kauri ± 5%
Tsawon Lantarki na Farko 22 mm (± 10%)
TTV (Jimlar Bambancin Kauri) ≤10 µm
Warp ≤25µm
FWHM ≤30 Arc-sec
Ƙarshen Sama Rq ≤0.35 nm

Aikace-aikace na SiC Epitaxial Wafer

Kayayyakin SiC Epitaxial Wafer suna da mahimmanci a sassa da yawa:

  • Motocin Lantarki (EVs): SiC Epitaxial na'urori masu tushen Wafer suna haɓaka ƙarfin wutar lantarki da rage nauyi.

  • Makamashi Mai Sabuntawa: Ana amfani dashi a cikin inverters don tsarin wutar lantarki na hasken rana da iska.

  • Kayayyakin wutar lantarki na Masana'antu: Kunna maɗaukaki mai girma, sauyawar zafin jiki tare da ƙananan asara.

  • Aerospace da Tsaro: Mafi dacewa ga mahalli masu tsauri da ke buƙatar na'urori masu ƙarfi.

  • 5G Tushen Tashoshi: Abubuwan SiC Epitaxial Wafer suna goyan bayan mafi girman ƙarfin ƙarfi don aikace-aikacen RF.

SiC Epitaxial Wafer yana ba da ƙarancin ƙira, saurin sauyawa, da ingantaccen canjin makamashi idan aka kwatanta da wafern silicon.

Amfanin SiC Epitaxial Wafer

Fasahar SiC Epitaxial Wafer tana ba da fa'idodi masu mahimmanci:

  1. High Breakdown Voltage: Yana tsayayya da ƙarfin lantarki har sau 10 sama da Si wafers.

  2. Thermal Conductivity: SiC Epitaxial Wafer yana watsar da zafi da sauri, yana barin na'urori suyi aiki mai sanyaya kuma mafi dogaro.

  3. Maɗaukakin Sauya Sauri: Ƙananan asarar hasara na canzawa yana ba da damar haɓaka mafi girma da ƙarami.

  4. Faɗin Bandgap: Yana tabbatar da kwanciyar hankali a mafi girman ƙarfin lantarki da yanayin zafi.

  5. Karfin Abu: SiC ba shi da ƙarfi a cikin sinadarai kuma yana da ƙarfi, manufa don buƙatar aikace-aikacen.

Waɗannan fa'idodin sun sa SiC Epitaxial Wafer ya zama kayan zaɓi don ƙarni na gaba na semiconductor.

FAQ: SiC Epitaxial Wafer

Q1: Menene bambanci tsakanin wafer SiC da SiC Epitaxial Wafer?
A SiC wafer yana nufin babban ma'auni, yayin da SiC Epitaxial Wafer ya haɗa da wani nau'i mai girma na musamman wanda aka yi amfani da shi wajen ƙirƙira na'urar.

Q2: Menene kauri ke samuwa don SiC Epitaxial Wafer layers?
Epitaxial Layer yawanci kewayo daga ƴan micrometers zuwa sama da 100 μm, ya danganta da buƙatun aikace-aikacen.

Q3: Shin SiC Epitaxial Wafer ya dace da yanayin zafi mai zafi?
Ee, SiC Epitaxial Wafer na iya aiki a cikin yanayi sama da 600°C, yana fin silica sosai.

Q4: Me yasa yawan lahani yake da mahimmanci a cikin SiC Epitaxial Wafer?
Ƙarƙashin ƙarancin lahani yana inganta aikin na'urar da yawan amfanin ƙasa, musamman don aikace-aikacen ƙarfin lantarki.

Q5: Shin nau'in N-type da nau'in P-type SiC Epitaxial Wafers duka suna samuwa?
Ee, ana samar da nau'ikan biyu ta amfani da daidaitaccen sarrafa iskar gas na dopant yayin aikin epitaxial.

Q6: Wadanne nau'ikan wafer ne daidaitattun SiC Epitaxial Wafer?
Daidaitaccen diamita sun haɗa da 2-inch, 4-inch, 6-inch, da ƙara 8-inch don masana'anta mai girma.

Q7: Ta yaya SiC Epitaxial Wafer tasiri farashi da inganci?
Duk da yake da farko ya fi tsada fiye da silicon, SiC Epitaxial Wafer yana rage girman tsarin da asarar wutar lantarki, inganta yawan ƙimar farashi a cikin dogon lokaci.

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