100mm 4inch GaN akan Sapphire Epi-Layer wafer Gallium nitride epitaxial wafer

(1) High zafin jiki yin burodi, sapphire substrate aka farko mai tsanani zuwa 1050 ℃ a cikin wani hydrogen yanayi, da manufar shi ne don tsaftace substrate surface;

(2) Lokacin da ma'aunin zafin jiki ya faɗi zuwa 510 ℃, ana ajiye ƙaramin zafin jiki na GaN/AlN mai kauri tare da kauri na 30nm akan saman sapphire substrate;

(3) Zazzabi ya tashi zuwa 10 ℃, ana allurar da iskar gas ammonia, trimethylgallium da silane, bi da bi suna sarrafa ƙimar da ta dace, kuma nau'in silicon-doped N-type GaN na 4um kauri yana girma;

(4) An yi amfani da iskar gas na trimethyl aluminum da trimethyl gallium don shirya silicon-doped N-type A⒑ nahiyoyi tare da kauri na 0.15um;

(5) 50nm Zn-doped InGaN an shirya shi ta hanyar allurar trimethylgallium, trimethylindium, diethylzinc da ammonia a zazzabi na 8O0 ℃ da sarrafa nau'ikan kwarara daban-daban bi da bi;

(6) An ƙara yawan zafin jiki zuwa 1020 ℃, trimethylaluminum, trimethylgallium da bis (cyclopentadienyl) magnesium an allura don shirya 0.15um Mg doped P-type AlGaN da 0.5um Mg doped P-type G glucose jini;

(7) Babban ingancin P-type GaN Sibuyan fim da aka samu ta hanyar annealing a cikin nitrogen yanayi a 700 ℃;

(8) Etching a kan P-type G stasis surface don bayyana N-type G stasis surface;

(9) Fitar da faranti na Ni/Au akan saman p-GANI, fitar da △/Al lamba akan saman ll-GaN don samar da na'urorin lantarki.