Kayan Aikin Ɗagawa na Laser na Semiconductor Yana Sauya Ingot Thinking

Kayan Aikin Ɗagawa na Laser na Semiconductor Yana Sauya Sigarin Ingot Hoton da Aka Fi So

Takaitaccen Bayani:

Kayan Aikin Lift-Off na Semiconductor Laser wani tsari ne na musamman na masana'antu wanda aka ƙera don rage siraran ingots na semiconductor daidai da rashin taɓawa ta hanyar dabarun ɗagawa da laser ke haifarwa. Wannan tsarin na zamani yana taka muhimmiyar rawa a cikin hanyoyin wafe na semiconductor na zamani, musamman a cikin ƙera wafers masu siriri sosai don na'urorin lantarki masu ƙarfi, LEDs, da na'urorin RF masu aiki mai ƙarfi. Ta hanyar ba da damar raba siraran yadudduka daga manyan ingots ko substrates masu bayarwa, Semiconductor Laser Lift-Off Equipment yana canza siraran ingot ta hanyar kawar da matakan yankewa, niƙa, da sinadarai na injiniya.

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Gabatarwar Samfurin Kayan Aikin Lift-Off Laser na Semiconductor

Simintin ƙarfe na semiconductor na gargajiya, kamar su gallium nitride (GaN), silicon carbide (SiC), da sapphire, galibi yana buƙatar aiki mai yawa, yana ɓatarwa, kuma yana iya haifar da ƙananan fasa ko lalacewar saman. Sabanin haka, Semiconductor Laser Lift-Off Equipment yana ba da madadin da ba ya lalatawa, wanda ke rage asarar abu da damuwar saman yayin da yake ƙara yawan aiki. Yana tallafawa nau'ikan kayan kristal da mahaɗan kuma ana iya haɗa su cikin layukan samarwa na semiconductor na gaba ko na tsakiya.

Tare da tsawon tsayin laser mai daidaitawa, tsarin mayar da hankali mai daidaitawa, da kuma wafer chucks masu jituwa da injin, wannan kayan aikin ya dace musamman don yanke ingot, ƙirƙirar lamella, da kuma cire fim mai siriri sosai don tsarin na'urori na tsaye ko canja wurin Layer heteroepitaxial.

Sigogi na Kayan Aikin Ɗaga Laser na Semiconductor

Tsawon Raƙuman Ruwa	IR/SHG/THG/FHG
Faɗin bugun jini	Nanosecond, Picosecond, Femtosecond
Tsarin Tantancewa	Tsarin gani mai gyara ko tsarin gani na Galvano
Matakin XY	500 mm × 500 mm
Tsarin sarrafawa	160 mm
Gudun Motsi	Matsakaicin 1,000 mm/sec
Maimaitawa	±1 μm ko ƙasa da haka
Daidaiton Matsayi:	±5 μm ko ƙasa da haka
Girman Wafer	Inci 2-6 ko kuma an keɓance shi
Sarrafa	Windows 10, 11 da PLC
Wutar Lantarki ta Wutar Lantarki	AC 200 V ±20 V, Mataki ɗaya, 50/60 kHz
Girman Waje	2400 mm (W) × 1700 mm (D) × 2000 mm (H)
Nauyi	1,000 kg

Ka'idar Aiki ta Semiconductor Kayan Aiki na Lif-Off Laser

Babban tsarin na'urar Semiconductor Laser Lift-Off Equipment ya dogara ne akan narkar da na'urar daukar hoto ko cirewa a wurin da ke tsakanin ingot mai bayarwa da kuma epitaxial ko kuma Layer da aka yi niyya. Ana mayar da hankali kan na'urar daukar hoto mai ƙarfi ta UV (yawanci KrF a 248 nm ko lasers mai ƙarfi na UV kusan 355 nm) ta hanyar kayan bayarwa mai haske ko rabin haske, inda ake sha makamashin a wani zurfin da aka riga aka tsara.

Wannan shaƙar makamashi ta gida yana ƙirƙirar wani matakin iskar gas mai matsin lamba ko kuma matakin faɗaɗa zafi a mahaɗin, wanda ke fara sharewa daga saman wafer ko layin na'urar daga tushen ingot. Ana daidaita tsarin sosai ta hanyar daidaita sigogi kamar faɗin bugun jini, tasirin laser, saurin scanning, da zurfin focal na z-axis. Sakamakon shine yanki mai siriri sosai - sau da yawa a cikin kewayon 10 zuwa 50 µm - wanda aka raba shi da kyau daga ingot na iyaye ba tare da gogewa na inji ba.

Wannan hanyar cire laser don rage girman ingot tana guje wa asarar kerf da lalacewar saman da ke tattare da yanke waya ta lu'u-lu'u ko lapping na inji. Hakanan yana kiyaye ingancin lu'u-lu'u kuma yana rage buƙatun gogewa, wanda hakan ya sa Semiconductor Laser Lift-Off Equipment kayan aiki ne mai canza wasa don samar da wafer na zamani.

Kayan Aikin Ɗagawa na Laser na Semiconductor yana Sauya Ingot Thinning 2

Aikace-aikacen Kayan Aikin Lift-Off na Semiconductor Laser

Kayan Aikin Lift-Off na Laser na Semiconductor yana samun fa'ida sosai a cikin siraran ingot a cikin nau'ikan kayan aiki da nau'ikan na'urori, gami da:

Na'urorin Wutar Lantarki na GaN da GaAs
Yana ba da damar ƙirƙirar siraran wafer don transistors da diodes masu ƙarfi da ƙarfi, masu ƙarancin juriya.

Rabuwar SiC Substrate da Rabuwar Lamella
Yana ba da damar ɗagawa daga sikelin wafer daga manyan abubuwan SiC don tsarin na'urori a tsaye da sake amfani da wafer.

Yankan Wafer na LED
Yana sauƙaƙa ɗaga yadudduka na GaN daga ingots masu kauri na sapphire don samar da substrates na LED masu siriri sosai.

ƙera Na'urorin RF da Microwave
Yana tallafawa tsarin transistor mai motsi mai ƙarfi (HEMT) mai matuƙar siriri wanda ake buƙata a cikin tsarin 5G da radar.

Canja wurin Layer na Epitaxial
Yana cire yadudduka na epitaxial daidai daga ingots na kristal don sake amfani da su ko haɗa su cikin heterostructures.

Kwayoyin Hasken Rana Masu Siriri da kuma Na'urorin Hasken Rana
Ana amfani da shi don raba siraran yadudduka masu shaye-shaye don ƙwayoyin hasken rana masu sassauƙa ko inganci.

A cikin kowanne daga cikin waɗannan fannoni, Kayan Aikin Lift-Off na Semiconductor Laser yana ba da iko mara misaltuwa akan daidaiton kauri, ingancin saman, da kuma ingancin Layer.

Fa'idodin Sikakken Ingot Mai Tushen Laser

Asarar Kayan Zero-Kerf
Idan aka kwatanta da hanyoyin yanka wafer na gargajiya, tsarin laser yana haifar da kusan amfani da kayan 100%.

Ƙananan Damuwa da Warping
Ɗagawa ba tare da taɓawa ba yana kawar da girgizar injiniya, yana rage girman wafer da samuwar microcrack.

Ajiye Ingancin Fuskar
Ba a buƙatar yin amfani da lap-slipping ko gogewa a lokuta da yawa, domin ɗaga laser yana kiyaye ingancin saman.

Babban Kayan Aiki da Shirye-shiryen Aiki da Kai
Yana iya sarrafa ɗaruruwan substrates a kowane aiki tare da loda/saukewa ta atomatik.

Mai daidaitawa da Kayayyaki da yawa
Mai jituwa da GaN, SiC, sapphire, GaAs, da kayan III-V masu tasowa.

Mafi aminci ga muhalli
Yana rage amfani da sinadarai masu ƙarfi da kuma sinadarai masu ƙarfi waɗanda aka saba amfani da su wajen rage radadi ta hanyar amfani da slurry.

Sake Amfani da Substrate
Ana iya sake yin amfani da ingots na masu ba da gudummawa don zagayowar ɗagawa da yawa, wanda hakan ke rage farashin kayan aiki sosai.

Tambayoyin da Ake Yawan Yi (Tambayoyin da Ake Yawan Yi) na Kayan Aikin Lif-Off na Laser Semiconductor

T1: Wane irin kauri ne Kayan aikin ɗagawa na Laser Semiconductor zai iya cimmawa don yanka wafer?
A1:Kauri na yanka yawanci yana daga 10 µm zuwa 100 µm dangane da kayan da tsari.

T2: Za a iya amfani da wannan kayan aikin don rage ƙurajen da aka yi da kayan da ba a iya gani kamar SiC ba?
A2:Eh. Ta hanyar daidaita tsawon laser da kuma inganta injiniyan haɗin gwiwa (misali, layukan haɗin kai na hadaya), har ma kayan da ba su da wani haske za a iya sarrafa su.

T3: Ta yaya ake daidaita substrate ɗin mai bayarwa kafin a ɗaga laser?
A3:Tsarin yana amfani da na'urorin daidaitawa na sub-micron-vision-based tare da ra'ayoyin daga alamun aminci da kuma na'urorin duba yanayin saman.

T4: Menene lokacin da ake tsammanin za a yi amfani da shi wajen ɗaga laser sau ɗaya?
A4:Dangane da girman wafer da kauri, zagayowar da aka saba yi tana ɗaukar daga minti 2 zuwa 10.

T5: Shin tsarin yana buƙatar muhallin tsaftace ɗaki?
A5:Duk da cewa ba dole ba ne, ana ba da shawarar haɗa ɗakunan tsaftacewa don kiyaye tsabtar substrate da yawan amfani da na'urori yayin aiki mai inganci.

game da Mu

XKH ta ƙware a fannin haɓaka fasaha, samarwa, da kuma sayar da gilashin gani na musamman da sabbin kayan lu'ulu'u. Kayayyakinmu suna ba da kayan lantarki na gani, na'urorin lantarki na masu amfani, da kuma sojoji. Muna ba da kayan gani na Sapphire, murfin ruwan tabarau na wayar hannu, yumbu, LT, Silicon Carbide SIC, Quartz, da wafers na lu'ulu'u na semiconductor. Tare da ƙwarewa mai ƙwarewa da kayan aiki na zamani, mun yi fice a fannin sarrafa samfura marasa tsari, da nufin zama babban kamfanin fasahar zamani na kayan lantarki na optoelectronic.