Sapphire Ingot Growth Equipment Czochralski CZ Hanyar don Samar da 2inch-12inch Sapphire Wafers

Kayayyakin Ci gaban Sapphire Ingot Hanyar Czochralski don Samar da 2inch-12inch Sapphire Wafers Featured Hoton

Takaitaccen Bayani:

Sapphire Ingot Growth Equipment (Hanyar Czochralski) wani tsari ne mai yanke hukunci wanda aka ƙera don tsafta mai ƙarfi, ƙarancin ƙarancin sapphire-crystal girma. Hanyar Czochralski (CZ) tana ba da damar sarrafa daidaitaccen saurin jan kristal iri (0.5-5 mm/h), saurin juyawa (5-30 rpm), da zafin jiki a cikin crucible iridium, yana samar da lu'ulu'u na axisymmetric har zuwa inci 12 (300 mm) a diamita. Wannan kayan aikin yana goyan bayan C/A-jirgin kristal daidaitawa iko, yana ba da damar haɓaka darajar gani, darajar lantarki, da sapphire doped (misali, Cr³⁺ ruby, Ti³⁺ tauraron sapphire).

XKH yana ba da mafita na ƙarshe-zuwa-ƙarshen, gami da gyare-gyaren kayan aiki (2-12-inch wafer samarwa), haɓaka tsari (ƙasa ƙarancin <100/cm²), da horon fasaha, tare da fitowar kowane wata na 5,000+ wafers don aikace-aikace kamar substrates LED, GaN epitaxy, da marufi na semiconductor.

Aika mana imel

Siffofin

Ƙa'idar Aiki

Hanyar CZ tana aiki ta hanyoyi masu zuwa:
1. Narke Raw Materials: High-tsarki Al₂O₃ (tsarki>99.999%) an narke a cikin iridium crucible a 2050-2100 ° C.
2. Gabatarwa Crystal Seed: An saukar da crystal iri a cikin narke, sannan ta biyo baya da sauri don samar da wuyansa (diamita <1 mm) don kawar da raguwa.
3. Ƙirƙirar Hanya da Girman Girma: An rage saurin ja zuwa 0.2-1 mm/h, a hankali yana faɗaɗa diamita crystal zuwa girman da aka yi niyya (misali, 4-12 inci).
4. Annealing da Cooling: An sanyaya crystal a 0.1-0.5 ° C / min don rage yawan damuwa na zafi mai zafi.
5. Nau'in Crystal masu jituwa:
Lantarki Grade: Semiconductor substrates (TTV <5 μm)
Matsayin gani: UV Laser windows (watsawa> 90% @ 200 nm)
Doped Bambance-bambance: Ruby (Cr³⁺ maida hankali 0.01-0.5 wt.%), blue sapphire tubing

Abubuwan Tsarin Mahimmanci

1. Tsarin narkewa
Iridium Crucible: Mai jurewa zuwa 2300C, mai jurewa lalata, mai jituwa tare da manyan narkewa (100-400 kg).
Induction dumama Furnace: Multi-zone mai zaman kansa zazzabi iko (± 0.5°C), ingantattun thermal gradients.

2. Tsarin Juyawa da Juyawa
Babban Madaidaicin Motar Servo: Ƙarfin ja 0.01 mm / h, jujjuyawar juzu'i <0.01 mm.
Hatimin Ruwan Magnetic: Watsawa mara lamba don ci gaba da girma (> 72 hours).

3. Thermal Control System
PID Rufe-Madauki Control: Daidaitawar wutar lantarki na ainihi (50-200 kW) don daidaita filin thermal.
Inert Gas Kariya: Ar / N₂ cakuda (99.999% tsarki) don hana hadawan abu da iskar shaka.

4. Automation da Kulawa
Kula da Diamita na CCD: Amsa na ainihi (daidaita ± 0.01 mm).
Infrared Thermography: Yana sa ido kan ƙwaƙƙwaran ƙirar ƙirar ruwa mai ƙarfi.

Kwatanta Hanyar CZ vs. KY

Parameter	Hanyar CZ	Hanyar KY
Max. Crystal Size	12 inci (300 mm)	400mm (ingot mai siffar pear)
Defect Density	<100/cm²	<50/cm²
Girman Girma	0.5-5 mm / h	0.1-2 mm / h
Amfanin Makamashi	50-80 kWh/kg	80-120 kWh/kg
Aikace-aikace	LED substrates, GaN epitaxy	Gilashin gani, manyan ingots
Farashin	Matsakaici (babban saka hannun jari na kayan aiki)	Babban (tsari mai rikitarwa)

Maɓallin Aikace-aikace

1. Semiconductor masana'antu
GaN Epitaxial Substrates: 2-8-inch wafers (TTV <10 μm) don Micro-LEDs da diodes laser.
SOI Wafers: Ragewar saman <0.2 nm don kwakwalwan kwamfuta-haɗe-haɗe na 3D.

2. Optoelectronics
UV Laser Windows: Tsaya 200 W/cm² ƙarfin ƙarfin ƙarfin lithography na gani.
Abubuwan Infrared: Ƙwararren Ƙwararru <10⁻³ cm⁻¹ don hoton zafi.

3. Masu amfani da Electronics
Rufin Kyamara ta Wayar Waya: Taurin Mohs 9, 10 × haɓaka juriya.
Nunin Smartwatch: Kauri 0.3-0.5 mm, watsawa> 92%.

4. Tsaro da Aerospace
Windows Reactor Nukiliya: Haƙurin Radiation har zuwa 10¹⁶ n/cm².
Madubin Laser Mai Girma: Nakasar thermal <λ/20@1064 nm.

Ayyukan XKH

1. Kayan aiki Customization
Zane-zane na Zane-zane: Φ200-400 mm saiti don samar da wafer na 2-12-inch.
Canjin Doping: Yana goyan bayan ƙarancin duniya (Er/Yb) da ƙarfe-ƙarfe (Ti/Cr) doping don abubuwan da aka keɓance na optoelectronic.

2. Ƙarshe-zuwa-Ƙarshe Taimako
Haɓaka Tsari: Shirye-shiryen da aka riga aka tabbatar (50+) don LED, na'urorin RF, da abubuwan da suka taurare radiation.
Cibiyar Sadarwar Sabis ta Duniya: 24/7 bincike mai nisa da kuma kula da kan layi tare da garanti na watanni 24.

3. Gudanarwa na ƙasa
Ƙirƙirar Wafer: Yanka, niƙa, da gogewa don wafers 2-12-inch (C/A-jirgin sama).
Kayayyakin Ƙarfafa Ƙimar:
Na'urorin gani: UV/IR windows (0.5-50 mm kauri).
Kayan Adon-Grade: Cr³⁺ ruby (GIA-certified), Ti³⁺ tauraron sapphire.

4. Jagorancin Fasaha
Takaddun shaida: Wafers masu dacewa da EMI.
Halayen haƙƙin mallaka: Babban haƙƙin mallaka a cikin sabbin hanyoyin CZ.

Kammalawa

Kayan aikin hanyar CZ yana ba da daidaituwa mai girma, ƙarancin ƙarancin ƙarancin ƙima, da kwanciyar hankali mai girma, yana mai da shi maƙasudin masana'antar don LED, semiconductor, da aikace-aikacen tsaro. XKH yana ba da cikakken goyon baya daga tura kayan aiki zuwa aikin haɓakawa bayan haɓaka, yana bawa abokan ciniki damar cimma farashi mai tsada, samar da kristal sapphire mai girma.