Sapphire Crystal Growth Furnace KY Kyropoulos Hanyar don Sapphire Wafer da Samar da Tagar gani

Takaitaccen Bayani:

Wannan kayan haɓaka kristal na sapphire yana amfani da hanyar Kyropoulos (KY) mai jagora na duniya, wanda aka kera musamman don manyan diamita, haɓakar sapphire guda-crystal mara ƙarancin lahani. Hanyar KY tana ba da damar sarrafa daidaitaccen jan kristal iri, saurin juyi, da yanayin zafin jiki, yana ba da damar haɓaka lu'ulu'u na sapphire har zuwa inci 12 (300 mm) a diamita a yanayin zafi (2000-2200°C). Ana amfani da tsarin KY na XKH a cikin samar da masana'antu na 2-12-inch C/A-plane wafers da tagogin gani, suna samun fitowar raka'a 20 kowane wata. Kayan aiki suna tallafawa tsarin doping (misali, Cr³⁰ doping don haɗin ruby) kuma yana ba da ingancin crystal tare da:

Girman ƙaura <100/cm²

Canjawa > 85% @ 400-5500 nm

Aika mana imel

Siffofin

Ƙa'idar Aiki

Babban ka'idar hanyar KY ta ƙunshi narkar da albarkatun Al₂O₃ masu tsafta a cikin tungsten/molybdenum crucible a 2050°C. Ana saukar da crystal iri a cikin narke, biye da cirewar sarrafawa (0.5-10 mm/h) da juyawa (0.5-20 rpm) don cimma ci gaban jagora na α-Al₂O₃ lu'ulu'u ɗaya. Babban fasali sun haɗa da:

• Manyan lu'ulu'u masu girma (max. Φ400 mm × 500 mm)
• Sapphire mai ƙarancin danniya (hargitsin gaban igiyar ruwa <λ/8 @ 633 nm)
• Lu'ulu'u masu ɗorewa (misali, Ti³⁰ doping don tauraron sapphire)

Abubuwan Tsarin Mahimmanci

1. Tsarin narkewar zafin jiki
• Tungsten-molybdenum hadadden crucible (max. Temp. 2300°C)
• Multi-zone graphite hita (±0.5°C kula da zafin jiki)

2. Crystal Growth System
• Injin jan da aka yi amfani da shi (± 0.01 mm daidaici)
• Hatimin jujjuya ruwa na Magnetic (0-30 rpm ƙa'idodin saurin stepless)

3. Kula da filin thermal
• Kula da zafin jiki mai zaman kansa na yanki 5 (1800-2200°C)
• Garkuwar zafi daidaitacce (± 2°C/cm gradient)
• Matsakaici & Tsarin yanayi
• 10⁻ Pa high vacuum
• Ar/N₂/H₂ gauraye sarrafa gas

4. Kulawa da hankali
• CCD real-lokaci crystal diamita saka idanu
• Gano matakin narkewa da yawa

Kwatanta Hanyar KY vs. CZ

Parameter	Hanyar KY	Hanyar CZ
Max. Girman Crystal	Φ400 mm	Φ200 mm
Yawan Girma	5-15 mm / h	20-50 mm / h
Lalacewar Yawa	<100/cm²	500-1000/cm²
Amfanin Makamashi	80-120 kWh/kg	50-80 kWh/kg
Aikace-aikace na yau da kullun	Gilashin gani/manyan wafers	LED substrates / kayan ado

Maɓallin Aikace-aikace

1. Windows Optoelectronic
• Sojoji IR domes (watsawa>85%@3-5 μm)
• UV Laser tagogi (juye da 200 W/cm² ikon yawa)

2. Semiconductor Substrates
• GaN epitaxial wafers (2-8 inch, TTV <10 μm)
• Soi substrates (ƙananan saman <0.2 nm)

3. Masu amfani da Electronics
• Gilashin murfin kyamarar wayar hannu (Mohs hardness 9)
• Nuni na Smartwatch (10× haɓaka juriya)

4. Na Musamman Materials
• Babban-tsarki IR na gani (sharwar ƙima <10⁻³ cm⁻¹)
• Gilashin kallon makamashin nukiliya (haƙurin radiyo: 10¹⁶ n/cm²)

Amfanin Kyropoulos (KY) Sapphire Crystal Growth Equipment

Hanyar Kyropoulos (KY) na tushen sapphire crystal girma kayan aiki yana ba da fa'idodin fasaha mara misaltuwa, sanya shi a matsayin mafita mai yanke hukunci don samar da masana'antu. Babban fa'idodin sun haɗa da:

1. Babban Diameter Capability: Mai ikon girma lu'ulu'u sapphire har zuwa inci 12 (300 mm) a diamita, yana ba da damar samar da yawan amfanin ƙasa na wafers da kayan aikin gani don aikace-aikacen ci-gaba irin su GaN epitaxy da windows-aji na soja.

2. Ultra-ƙarancin ƙarancin ƙarancin haske: Ya sami damar dannawa da yawa <100 / cm² ta hanyar ingantaccen yanayin yanayin zafi da kuma ingantaccen yanayin yanayin zafin jiki.

3. High-Quality Optical Performance: Isar da watsawa> 85% fadin ganuwa zuwa infrared spectra (400-5500 nm), m ga UV Laser windows da infrared optics.

4. Na ci gaba Automation: Yana da fasali na servo-kore ja injuna (±0.01 mm daidaici) da Magnetic ruwa rotary like (0-30 rpm stepless iko), rage girman sa hannun mutum da kuma inganta daidaito.

5. Zaɓuɓɓukan Doping masu sauƙi

6. Ƙarfafa Ƙarfafa : Ƙaƙwalwar thermal insulation (tungsten-molybdenum crucible) yana rage yawan amfani da makamashi zuwa 80-120 kWh / kg, gasa tare da madadin hanyoyin haɓaka.

7. Scalable Production
;
8. Ƙarfafa Darajin Soja
Waɗannan sabbin sabbin abubuwa suna ƙarfafa hanyar KY azaman ma'aunin zinare don samar da lu'ulu'u na sapphire masu inganci, haɓaka haɓakawa a cikin sadarwar 5G, ƙididdigar ƙididdiga, da fasahar tsaro.

Ayyukan XKH

XKH yana ba da cikakkiyar mafita don tsarin haɓaka kristal na sapphire, wanda ya ƙunshi shigarwa, haɓaka tsari, da horar da ma'aikata don tabbatar da haɗin gwiwar aiki mara kyau. Muna isar da ingantattun girke-girke na haɓaka (50+) waɗanda aka keɓance don buƙatun masana'antu iri-iri, suna rage lokacin R&D ga abokan ciniki. Don ƙwararrun aikace-aikace, ayyukan haɓaka na al'ada suna ba da damar gyare-gyaren rami (Φ200-400 mm) da tsarin doping na ci gaba (Cr/Ti/Ni), masu goyan bayan manyan kayan aikin gani da kayan juriya.

Ayyukan da aka ƙara darajar sun haɗa da sarrafa bayan girma kamar slicing, nika, da goge goge, wanda aka haɗa su da cikakken kewayon samfuran sapphire kamar wafers, tubes, da gemstone blanks. Waɗannan abubuwan sadaukarwa suna kula da sassa daga na'urorin lantarki zuwa sararin samaniya. Taimakon fasahar mu yana ba da garantin watanni 24 da bincike na nisa na ainihi, yana tabbatar da ƙarancin ƙarancin lokaci da ingantaccen samarwa.