Kayayyaki
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p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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SiC substrate P-nau'in 4H/6H-P 3C-N 4inch tare da kauri na 350um Production sa Dummy sa
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4H/6H-P 6inch SiC wafer Zero matakin MPD Samar da Grade Dummy Grade
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P-nau'in SiC wafer 4H/6H-P 3C-N 6inch kauri 350 μm tare da Farko Flat Orientation
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Alumina yumbu hannu al'ada Ceramic robotic hannu
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Hanyar Sapphire tube KY duk abin da za'a iya gyarawa
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Al2O3 99.999% sapphire al'ada ruwan wukake m lalacewa 38 × 4.5 × 0.3mmt
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Za a iya keɓance dashen gashin sapphire don dalilai na likita
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Lilac YAG albarkatun kasa foda purple a hannun jari
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Tsarin TVG akan quartz sapphire BF33 wafer Gilashin wafer naushi
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Single Crystal Silicon Wafer Si Substrate Nau'in N/P Zaɓaɓɓen Silicon Carbide Wafer
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N-Nau'in SiC Composite Substrates Dia6inch Babban ingancin monocrystaline da ƙarancin inganci.