p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD

p-type 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Sifili MPD Featured Image

Takaitaccen Bayani:

Nau'in P-nau'in 4H/6H-P 3C-N nau'in SiC substrate, 4-inch tare da 〈111〉± 0.5° fuskantarwa da Zero MPD (Micro Pipe Defect) sa, babban aikin semiconductor abu ne wanda aka tsara don na'urar lantarki ta ci gaba. masana'antu. An san shi don kyakkyawan ƙarfin wutar lantarki, babban ƙarfin rushewa, da juriya mai ƙarfi ga yanayin zafi da lalata, wannan madaidaicin shine manufa don kayan lantarki da aikace-aikacen RF. Makin MPD na Zero yana ba da garantin ƙarancin lahani, yana tabbatar da aminci da kwanciyar hankali a cikin manyan na'urori masu aiki. Madaidaicin 〈111〉± 0.5° yana ba da damar daidaita daidaituwa yayin ƙirƙira, yana sa ya dace da manyan matakan masana'antu. Ana amfani da wannan madaidaicin a ko'ina a cikin matsanancin zafi, ƙarfin lantarki, da na'urorin lantarki masu ƙarfi, kamar masu canza wuta, inverters, da abubuwan RF.

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Cikakken Bayani

Tags samfurin

4H/6H-P Nau'in SiC Combosite Substrates Common siga tebur

4 inch diamita SiliconCarbide (SiC) Substrate Ƙayyadaddun bayanai

Daraja			Zero MPD Production Darasi (Z Daraja)	Standard Production Darasi (P Daraja)	Dummy Grade (D Daraja)
Diamita			99.5mm ~ 100.0 mm
Kauri			350 μm ± 25 μm
Wafer Orientation			Kashe axis: 2.0°-4.0°zuwa [112(-)0] ± 0.5° don 4H/6H-P, On axis:〈111〉± 0.5° don 3C-N
Maƙarƙashiya Maɗaukaki			0 cm - 2
Resistivity	p-nau'in 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-nau'in 3C-N		≤0.8 mΩ cm		≤1 m Ωꞏcm
Hannun Filayen Firamare		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Tsawon Fitowa na Farko			32.5 mm ± 2.0 mm
Tsawon Lantarki na Sakandare			18.0 mm ± 2.0 mm
Gabatarwar Flat na Sakandare			Fuskar Silicon: 90° CW. daga Prime flat±5.0°
Ƙarƙashin Ƙarfi			3 mm ku		6 mm ku
LTV/TTV/Baka/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Tashin hankali			Yaren mutanen Poland Ra≤1 nm
			CMP Ra≤0.2 nm		≤0.5 nm
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara			Babu		Tsayin tarawa ≤ 10 mm, tsayi ɗaya≤2 mm
Hex Plates Ta Babban Haske mai ƙarfi			Tarin yanki ≤0.05%		Tarin yanki ≤0.1%
Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi			Babu		Tarin yanki≤3%
Haɗin Carbon Na gani			Tarin yanki ≤0.05%		Tarin yanki ≤3%
Silicon Surface Scratches By High Intensity Light			Babu		Tsayin tarawa≤1× diamita wafer
Edge Chips High By Intensity Light			Babu wanda aka halatta ≥0.2mm nisa da zurfinsa		5 izini, ≤1 mm kowanne
Gurɓatar Silicon Surface Ta Babban Ƙarfi			Babu
Marufi			Cassette mai yawa-wafer ko kwantena wafer guda ɗaya

Bayanan kula:

※ Iyakoki na lahani sun shafi gaba dayan farfajiyar wafer ban da wurin keɓe gefen. # Ya kamata a duba karce a fuskar Si kawai.

Nau'in P-nau'in 4H/6H-P 3C-N nau'in 4-inch SiC substrate tare da 〈111〉± 0.5° fuskantarwa da Zero MPD grade ana amfani da ko'ina a high-yi lantarki aikace-aikace. Kyakkyawan ƙarfin wutar lantarki da ƙarfin rushewar wutar lantarki ya sa ya dace da na'urorin lantarki, irin su manyan wutar lantarki, masu juyawa, da masu canza wuta, suna aiki a cikin matsanancin yanayi. Bugu da ƙari, juriya na substrate ga babban yanayin zafi da lalata yana tabbatar da ingantaccen aiki a cikin yanayi mara kyau. Madaidaicin 〈111〉± 0.5° yana haɓaka daidaiton masana'anta, yana sa ya dace da na'urorin RF da aikace-aikacen mitoci masu girma, kamar tsarin radar da kayan sadarwar mara waya.

Fa'idodin nau'in N-type SiC composite substrates sun haɗa da:

1. Haske mai zafi: ingantaccen zafi, sanya shi dace da mahimmin-zazzabi da aikace-aikacen babban aiki.
2. Babban fashewa da wutar lantarki: Tabbatar da aikin aminci a cikin aikace-aikacen babban ƙarfin lantarki kamar masu sauya masu canzawa da kuma masu sauya.
3. Zero MPD (Micro Pipe Defect) Matsayi: Yana ba da garantin ƙarancin lahani, samar da kwanciyar hankali da babban aminci a cikin na'urorin lantarki masu mahimmanci.
4. Juriya na Lalata: Mai dorewa a cikin yanayi mai tsauri, tabbatar da aiki na dogon lokaci a cikin yanayi mai buƙata.
5. Madaidaicin 〈111〉± 0.5° Gabatarwa: Yana ba da damar daidaitattun daidaituwa yayin masana'anta, haɓaka aikin na'urar a cikin mitoci da aikace-aikacen RF.

Gabaɗaya, nau'in P-nau'in 4H/6H-P 3C-N nau'in 4-inch SiC substrate tare da 〈111〉± 0.5° fuskantarwa da Zero MPD grade shine babban kayan aiki da ya dace don aikace-aikacen lantarki na ci gaba. Kyakkyawan ƙarfin wutar lantarki mai ƙarfi da ƙarfin rushewar wutar lantarki ya sa ya zama cikakke ga na'urorin lantarki kamar manyan wutan lantarki, masu juyawa, da masu juyawa. Makin MPD na Zero yana tabbatar da ƙarancin lahani, yana ba da aminci da kwanciyar hankali a cikin na'urori masu mahimmanci. Bugu da ƙari, juriya na substrate ga lalata da yanayin zafi yana tabbatar da dorewa a cikin yanayi mara kyau. Madaidaicin 〈111〉± 0.5° yana ba da damar daidaitaccen daidaitawa yayin masana'anta, yana mai da shi dacewa sosai ga na'urorin RF da aikace-aikacen mitoci masu girma.