Nau'in p-type 4H/6H-P 3C-N TYPE SIC substrate 4in 〈111〉± 0.5°Sifili MPD
Nau'in 4H/6H-P SiC Composite Substrates Teburin sigogi na gama gari
4 diamita inci na siliconSubstrate na Carbide (SiC) Ƙayyadewa
| Matsayi | Sifili Samar da MPD Maki (Z) maki) | Tsarin Samarwa na Daidaitacce Maki (P) maki) | Daraja ta Karya (D maki) | ||
| diamita | 99.5 mm~100.0 mm | ||||
| Kauri | 350 μm ± 25 μm | ||||
| Tsarin Wafer | A gefen axis: 2.0°-4.0° zuwa [11]20] ± 0.5° don 4H/6H-P, Oaxis na n:〈111〉± 0.5° don 3C-N | ||||
| Yawan bututun micropipe | 0 cm-2 | ||||
| Juriya | nau'in p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Babban Tsarin Faɗi | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Babban Tsawon Lebur | 32.5 mm ± 2.0 mm | ||||
| Tsawon Lebur na Biyu | 18.0 mm ± 2.0 mm | ||||
| Tsarin Faɗi na Biyu | Fuskar silicon sama: 90° CW. daga Prime flat±5.0° | ||||
| Keɓewa a Gefen | 3 mm | 6 mm | |||
| LTV/TTV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Taurin kai | Yaren mutanen Poland Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Fashewar Gefen Ta Hanyar Haske Mai Tsanani | Babu | Tsawon jimilla ≤ 10 mm, tsawonsa ɗaya ≤ 2 mm | |||
| Faranti na Hex ta Haske Mai Tsanani | Yankin da aka tara ≤0.05% | Yankin da aka tara ≤0.1% | |||
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Babu | Yankin da aka tara≤3% | |||
| Abubuwan da ke tattare da Carbon na gani | Yankin da aka tara ≤0.05% | Yankin da aka tara ≤3% | |||
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | Babu | Tsawon jimla ≤1 × diamita na wafer | |||
| Ƙwayoyin Gefen Suna da Haske Mai Tsanani | Babu wanda aka yarda da faɗin da zurfin ≥0.2mm | An yarda da 5, ≤1 mm kowanne | |||
| Gurɓatar Fuskar Silicon Ta Hanyar Ƙarfi Mai Girma | Babu | ||||
| Marufi | Akwatin Wafer Mai Yawa ko Akwatin Wafer Guda ɗaya | ||||
Bayanan kula:
※Iyakan lahani sun shafi dukkan saman wafer sai dai yankin da aka ware gefen. # Ya kamata a duba ƙyallen a fuskar Si kawai.
Ana amfani da nau'in P-type 4H/6H-P 3C-N nau'in SiC mai inci 4 tare da yanayin daidaitawar 〈111〉± 0.5° da kuma matakin Siro MPD a aikace-aikacen lantarki masu aiki sosai. Kyakkyawan yanayin watsa zafi da ƙarfin lantarki mai lalacewa sun sa ya dace da na'urorin lantarki masu amfani da wutar lantarki, kamar masu sauya wutar lantarki masu ƙarfi, inverters, da masu sauya wutar lantarki, suna aiki a cikin yanayi mai tsanani. Bugu da ƙari, juriyar substrate ga yanayin zafi mai yawa da tsatsa yana tabbatar da aiki mai dorewa a cikin yanayi mai wahala. Daidaitaccen yanayin 〈111〉± 0.5° yana haɓaka daidaiton masana'antu, yana mai da shi dacewa da na'urorin RF da aikace-aikacen mita mai yawa, kamar tsarin radar da kayan aikin sadarwa mara waya.
Fa'idodin abubuwan haɗin gwiwa na N-type SiC sun haɗa da:
1. Babban Tsarin Zafi: Ingantaccen watsa zafi, wanda hakan ya sa ya dace da yanayin zafi mai yawa da aikace-aikacen wutar lantarki mai ƙarfi.
2. Babban ƙarfin wutar lantarki mai lalacewa: Yana tabbatar da ingantaccen aiki a cikin aikace-aikacen wutar lantarki mai ƙarfi kamar masu canza wutar lantarki da inverters.
3. Sifili MPD (Ƙaramin Lalacewar Bututu): Yana ba da garantin ƙarancin lahani, yana samar da kwanciyar hankali da aminci mai yawa a cikin na'urorin lantarki masu mahimmanci.
4. Juriyar Tsatsa: Yana da ɗorewa a cikin mawuyacin yanayi, yana tabbatar da aiki na dogon lokaci a cikin yanayi mai wahala.
5. Daidaito 〈111〉± 0.5°: Yana ba da damar daidaita daidaito yayin ƙera, inganta aikin na'ura a cikin aikace-aikacen mita mai yawa da RF.
Gabaɗaya, nau'in P-type 4H/6H-P 3C-N nau'in SiC mai inci 4 tare da yanayin daidaitawar 〈111〉± 0.5° da kuma matakin Zero MPD abu ne mai matuƙar aiki wanda ya dace da aikace-aikacen lantarki na zamani. Kyakkyawan yanayin watsa zafi da ƙarfin lantarki mai ƙarfi sun sa ya zama cikakke ga na'urorin lantarki masu ƙarfi kamar masu sauya wutar lantarki mai ƙarfi, inverters, da masu juyawa. Matsayin Zero MPD yana tabbatar da ƙarancin lahani, yana ba da aminci da kwanciyar hankali a cikin na'urori masu mahimmanci. Bugu da ƙari, juriyar substrate ga tsatsa da yanayin zafi mai yawa yana tabbatar da dorewa a cikin yanayi mai wahala. Daidaitaccen yanayin daidaitawar 〈111〉± 0.5° yana ba da damar daidaitawa daidai yayin ƙera, yana mai da shi ya dace sosai ga na'urorin RF da aikace-aikacen mita mai yawa.
Cikakken Zane
