HPSI SiC Wafer ≥90% Matsayi na gani na watsawa don Gilashin AI/AR

HPSI SiC Wafer ≥90% Matsayin Na'urar Canjawa don Gilashin AI/AR

Takaitaccen Bayani:

Siga	Daraja	4-inch Substrate	6-Inci Substrate
Diamita	Z Grade / D darajar	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Poly-type	Z Grade / D darajar	4H	4H
Kauri	Babban darajar Z	500 μm ± 15 μm	500 μm ± 15 μm
Kauri	D darajar	500 μm ± 25 μm	500 μm ± 25 μm
Wafer Orientation	Z Grade / D darajar	Kan axis: <0001> ± 0.5°	Kan axis: <0001> ± 0.5°
Micropipe Density	Babban darajar Z	≤ 1 cm²	≤ 1 cm²
Micropipe Density	D darajar	≤ 15 cm²	≤ 15 cm²
Resistivity	Babban darajar Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Resistivity	D darajar	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm

Aika mana imel

Siffofin

Babban Gabatarwa: Matsayin HPSI SiC Wafers a cikin Gilashin AI/AR

HPSI (High-Purity Semi-Insulating) Silicon Carbide wafers ƙwararrun wafers ne waɗanda ke da babban juriya (> 10⁹ Ω · cm) da ƙarancin ƙarancin lahani. A cikin gilashin AI / AR, da farko suna aiki a matsayin ainihin kayan aikin don ruwan tabarau mai ban sha'awa na gani, magance kwalabe masu alaƙa da kayan gani na gargajiya dangane da nau'ikan nau'ikan bakin ciki-da-haske, ɓarkewar zafi, da aikin gani. Misali, gilashin AR da ke amfani da ruwan tabarau na SiC waveguide na iya cimma babban filin kallo (FOV) na 70 ° – 80°, yayin da rage kaurin ruwan ruwan tabarau zuwa kawai 0.55mm da nauyi zuwa 2.7g kawai, yana haɓaka sawa ta'aziyya da nutsewar gani.

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Halayen Maɓalli: Yadda SiC Material ke Ƙarfafa Ƙirar Gilashin AI/AR

Babban Fihirisar Refractive da Inganta Ayyukan gani

SiC's refractive index (2.6-2.7) ya kusan 50% sama da na gilashin gargajiya (1.8-2.0). Wannan yana ba da damar mafi ƙaranci kuma mafi inganci tsarin jagorar wave, yana faɗaɗa FOV sosai. Babban fihirisar refractive kuma yana taimakawa kashe “tasirin bakan gizo” gama gari a cikin jagororin raƙuman raƙuman ruwa, inganta tsabtar hoto.

Ƙwararrun Ƙwararrun Ƙwararrun Ƙwararrun Ƙwararru

Tare da haɓakar thermal kamar 490 W / m · K (kusa da na jan karfe), SiC na iya watsar da zafi da sauri ta hanyar ƙirar nunin Micro-LED. Wannan yana hana lalacewar aiki ko tsufa na na'ura saboda yanayin zafi mai girma, yana tabbatar da tsawon rayuwar batir da babban kwanciyar hankali.

Ƙarfin Injini da Dorewa

SiC yana da taurin Mohs na 9.5 (na biyu kawai zuwa lu'u-lu'u), yana ba da juriya na musamman, yana mai da shi manufa don gilashin mabukaci akai-akai. Za'a iya sarrafa ƙarancin yanayin sa zuwa Ra <0.5 nm, yana tabbatar da ƙarancin hasara da watsa haske iri ɗaya a cikin jagororin raƙuman ruwa.

Dacewar Kayan Lantarki

Resistance HPSI SiC (> 10⁹ Ω · cm) yana taimakawa hana tsangwama sigina. Hakanan yana iya aiki azaman ingantaccen kayan na'urar wuta, yana haɓaka samfuran sarrafa wutar lantarki a cikin gilashin AR.

Jagoran Aikace-aikacen Farko

Abubuwan Haɓaka Na gani don AI/AR Glasses ba

Diffractive Waveguide Lenses: Ana amfani da sinadarai na SiC don ƙirƙirar jagororin raƙuman ruwa masu bakin ciki masu goyan bayan manyan FOV da kawar da tasirin bakan gizo.
Faranti na taga da Prisms: Ta hanyar yankan da aka keɓance da gogewa, ana iya sarrafa SiC cikin tagogi masu kariya ko prisms na gilashin AR, haɓaka watsa haske da juriya.

Extended Applications in Other Fields

Lantarki na Wuta: Ana amfani da shi a cikin mitoci mai ƙarfi, yanayin yanayi mai ƙarfi kamar sabbin injin injin kuzari da sarrafa injin masana'antu.
Quantum Optics: Yana aiki a matsayin mai masaukin baki don cibiyoyin launi, ana amfani da su a cikin abubuwan da ake amfani da su don sadarwa ta ƙididdigewa da na'urori masu ji.

4 inch & 6 inch HPSI SiC Kwatanta Ƙayyadaddun Ƙididdigar Substrate

Siga	Daraja	4-inch Substrate	6-Inci Substrate
Diamita	Z Grade / D darajar	99.5 mm - 100.0 mm	149.5 mm - 150.0 mm
Poly-type	Z Grade / D darajar	4H	4H
Kauri	Babban darajar Z	500 μm ± 15 μm	500 μm ± 15 μm
Kauri	D darajar	500 μm ± 25 μm	500 μm ± 25 μm
Wafer Orientation	Z Grade / D darajar	Kan axis: <0001> ± 0.5°	Kan axis: <0001> ± 0.5°
Micropipe Density	Babban darajar Z	≤ 1 cm²	≤ 1 cm²
Micropipe Density	D darajar	≤ 15 cm²	≤ 15 cm²
Resistivity	Babban darajar Z	≥ 1E10 Ω·cm	≥ 1E10 Ω·cm
Resistivity	D darajar	≥ 1E5 Ω·cm	≥ 1E5 Ω·cm
Matsayin Farko na Flat	Z Grade / D darajar	(10-10) ± 5.0°	(10-10) ± 5.0°
Tsawon Lantarki na Farko	Z Grade / D darajar	32.5 mm ± 2.0 mm	Daraja
Tsawon Lantarki na Sakandare	Z Grade / D darajar	18.0 mm ± 2.0 mm	-
Exclusion na Edge	Z Grade / D darajar	3 mm ku	3 mm ku
LTV / TTV / Baka / Warp	Babban darajar Z	≤ 2.5 μm / ≤ 5 μm / ≤ 15 μm / ≤ 30 μm	2.5 μm / ≤ 6 μm / ≤ 25 μm / ≤ 35 μm
LTV / TTV / Baka / Warp	D darajar	≤ 10 μm / ≤ 15 μm / ≤ 25 μm / ≤ 40 μm	≤ 5 μm / ≤ 15 μm / ≤ 40 μm / ≤ 80 μm
Rashin hankali	Babban darajar Z	Yaren mutanen Poland Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Yaren mutanen Poland Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
Rashin hankali	D darajar	Yaren mutanen Poland Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Yaren mutanen Poland Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Edge Cracks	D darajar	Tarin yanki ≤ 0.1%	Tsayin tarawa ≤ 20 mm, guda ≤ 2 mm
Yankunan Polytype	D darajar	Tarin yanki ≤ 0.3%	Tarin yanki ≤ 3%
Abubuwan Haɗin Carbon Na gani	Babban darajar Z	Tarin yanki ≤ 0.05%	Tarin yanki ≤ 0.05%
Abubuwan Haɗin Carbon Na gani	D darajar	Tarin yanki ≤ 0.3%	Tarin yanki ≤ 3%
Silicon Surface Scratches	D darajar	5 an yarda, kowane ≤1mm	Tsayin tarawa ≤ 1 x diamita
Edge Chips	Babban darajar Z	Babu wanda aka halatta (nisa da zurfin ≥0.2mm)	Babu wanda aka halatta (nisa da zurfin ≥0.2mm)
Edge Chips	D darajar	7 an yarda, kowane ≤1mm	7 an yarda, kowane ≤1mm
Rushewar Threading Screw Dislocation	Babban darajar Z	-	≤ 500 cm²
Packing	Z Grade / D darajar	Cassette mai yawa-wafer ko kwantena wafer guda ɗaya	Cassette mai yawa-wafer ko kwantena wafer guda ɗaya

Ayyukan XKH: Ƙirƙirar Ƙirƙirar Ƙarfafawa da Ƙarfafa Ƙarfafawa

Kamfanin XKH yana da damar haɗin kai tsaye daga albarkatun ƙasa zuwa gama wafers, wanda ke rufe dukkan sarkar ci gaban SiC, slicing, polishing, da sarrafa al'ada. Babban fa'idodin sabis sun haɗa da:

Diversity na Material:Zamu iya samar da nau'ikan wafer iri-iri kamar nau'in 4H-N, nau'in 4H-HPSI, nau'in 4H/6H-P, da nau'in 3C-N. Ana iya daidaita juriya, kauri, da daidaitawa bisa ga buƙatu.
;Ƙimar Girma Mai Sauƙi:Muna goyan bayan sarrafa wafer daga diamita 2-inch zuwa 12-inch, kuma muna iya aiwatar da sifofi na musamman kamar murabba'i guda (misali, 5x5mm, 10x10mm) da prisms marasa tsari.
Ikon Madaidaicin Matsayi:Wafer Total kauri Bambanci (TTV) za a iya kiyaye a <1μm, da kuma surface roughness a Ra <0.3 nm, saduwa da nano-matakin flatness bukatun ga waveguide na'urorin.
Martanin Kasuwa Mai Sauri:Samfurin kasuwancin da aka haɗa yana tabbatar da ingantaccen canji daga R&D zuwa samarwa da yawa, yana tallafawa komai daga ƙaramin tabbatarwa zuwa jigilar kaya mai girma (lokacin jagora yawanci kwanaki 15-40).

FAQ na HPSI SiC Wafer

Q1: Me yasa ake ɗaukar HPSI SiC a matsayin ingantaccen abu don ruwan tabarau na AR waveguide?
A1: Babban ma'aunin refractive (2.6-2.7) yana ba da damar siriri, ingantacciyar tsarin tsarin raƙuman ruwa wanda ke goyan bayan fage mafi girma (misali, 70°-80°) yayin da yake kawar da "tasirin bakan gizo".
Q2: Ta yaya HPSI SiC ke haɓaka sarrafa zafi a cikin gilashin AI / AR?
A2: Tare da ƙaddamarwar thermal har zuwa 490 W / m · K (kusa da jan karfe), yana da kyau ya watsar da zafi daga abubuwan da aka gyara kamar Micro-LEDs, yana tabbatar da kwanciyar hankali da kuma tsawon rayuwar na'urar.
Q3: Wadanne fa'idodin dorewa ne HPSI SiC ke bayarwa don gilashin sawa?
A3: Ƙarfin sa na musamman (Mohs 9.5) yana ba da juriya mafi girma, yana mai da shi mai dorewa don amfanin yau da kullun a cikin gilashin AR-mabukaci.