Epitaxial Layer
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200mm 8inch GaN akan sapphire Epi-Layer wafer substrate
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GaN akan Gilashin 4-inch: Zaɓuɓɓukan Gilashin da za a iya gyarawa gami da JGS1, JGS2, BF33, da Ma'adini na yau da kullun
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AlN-on-NPSS Wafer: Ƙarfin Aluminum Nitride Layer Ƙaƙƙarfan Ayyuka akan Sapphire Sapphire mara gogewa don Babban Zazzabi, Babban ƙarfi, da Aikace-aikacen RF
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Gallium Nitride akan Silicon wafer 4inch 6 inch Tailored Si Substrate Orientation, Resistivity, and N-type/P-type Options
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Musamman GaN-on-SiC Epitaxial Wafers (100mm, 150mm) - Zaɓuɓɓukan SiC da yawa (4H-N, HPSI, 4H/6H-P)
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GaN-on-Diamond Wafers 4inch 6inch Total epi kauri (micron) 0.6 ~ 2.5 ko kuma na musamman don Manyan Aikace-aikace
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InGaAs epitaxial wafer substrate PD Array photodetector arrays ana iya amfani dashi don LiDAR
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2inch 3inch 4inch InP epitaxial wafer substrate APD mai gano haske don sadarwar fiber optic ko LiDAR
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GaAs high-power epitaxial wafer substrate gallium arsenide wafer ikon Laser tsayin tsayin 905nm don maganin likitancin Laser
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Silicon-On-Insulator Substrate SOI wafer yadudduka uku don Microelectronics da Mitar Rediyo
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SOI wafer insulator akan siliki 8-inch da 6-inch SOI (Silicon-On-Insulator) wafers
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6inch SiC Epitaxyy wafer N/P nau'in karba na musamman