Layer na Epitaxial
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200mm 8inci GaN akan sapphire Epi-layer wafer substrate
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Na'urorin RF Acoustic masu Aiki Mai Kyau (LNOSiC)
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GaN akan Gilashin Inci 4: Zaɓuɓɓukan Gilashin da Za a iya Keɓancewa gami da JGS1, JGS2, BF33, da Ordinary Quartz
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Wafer na AlN-on-NPSS: Layer na Aluminum Nitride Mai Aiki Mai Kyau akan Substrate ɗin Sapphire mara gogewa don Amfani da Zafin Jiki Mai Kyau, Mai Ƙarfi Mai Kyau, da RF
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Wafers na Epitaxial na GaN-on-SiC na Musamman (100mm, 150mm) – Zaɓuɓɓukan Substrate na SiC da yawa (4H-N, HPSI, 4H/6H-P)
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Wafers ɗin GaN-on-Diamond mai inci 4 da inci 6 Jimlar kauri na epi (micron) 0.6 ~ 2.5 ko an keɓance shi don aikace-aikacen Mita Mai Yawa
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GaAs babban ƙarfin epitaxial wafer substrate gallium arsenide wafer wafer ikon laser tsawon rai 905nm don maganin laser
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Ana iya amfani da jerin na'urorin gano hoto na InGaAs epitaxial wafer substrate PD Array don LiDAR.
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Na'urar gano haske ta APD mai inci 2, inci 3, inci 4, mai gano haske ta APD don sadarwa ta fiber optic ko LiDAR
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6inch SiC Epitaxiy wafer N/P nau'in yarda da musamman
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Wafer ɗin SiC Epi mai inci 4 don MOS ko SBD
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Substrate na Silicon-On-Insulator SOI ya ƙunshi layuka uku na Microelectronics da Mitar Rediyo