8 inch SiC silicon carbide wafer 4H-N nau'in 0.5mm samar da matakin bincike na al'ada mai gogewa

8 inch SiC silicon carbide wafer 4H-N nau'in nau'in 0.5mm samar da matakin bincike na al'ada mai gogewa Hoto

Takaitaccen Bayani:

Silicon carbide (SiC), kuma aka sani da silicon carbide, semiconductor ne mai ɗauke da silicon da carbon tare da tsarin sinadarai SiC. Ana amfani da SiC a cikin na'urorin lantarki na semiconductor waɗanda ke aiki a yanayin zafi ko babban matsi, ko duka biyun. SiC kuma yana ɗaya daga cikin mahimman abubuwan haɗin LED, yanki ne na yau da kullun don haɓaka na'urorin GaN, kuma ana iya amfani da shi azaman nutse mai zafi don manyan LEDs.
8-inch silicon carbide substrate wani muhimmin sashi ne na ƙarni na uku na kayan aikin semiconductor, wanda ke da halaye na ƙarfin fashewar filin, babban ƙarfin zafin jiki, ƙimar jikewar wutar lantarki, da sauransu, kuma ya dace da yin babban zafin jiki, high-voltage, da kuma manyan na'urorin lantarki. Babban filayen aikace-aikacensa sun haɗa da motocin lantarki, zirga-zirgar jiragen ƙasa, watsa wutar lantarki mai ƙarfi da canji, hotuna, sadarwar 5G, ajiyar makamashi, sararin samaniya, da cibiyoyin bayanan wutar lantarki na AI core.

Aika mana imel

Cikakken Bayani

Tags samfurin

Babban fasalulluka na nau'in nau'in silicon carbide substrate 8-inch 4H-N sun haɗa da:

1. Microtubule yawa: ≤ 0.1/cm² ko žasa, kamar microtubule yawa an rage muhimmanci zuwa kasa da 0.05/cm² a wasu kayayyakin.
2. Crystal form rabo: 4H-SiC crystal form rabo ya kai 100%.
3. Resistivity: 0.014 ~ 0.028 Ω · cm, ko mafi barga tsakanin 0.015-0.025 Ω · cm.
4. Tashin hankali: CMP Si Face Ra≤0.12nm.
5. Kauri: Yawancin lokaci 500.0 ± 25μm ko 350.0 ± 25μm.
6. Chamfering kusurwa: 25 ± 5 ° ko 30 ± 5 ° don A1 / A2 dangane da kauri.
7. Jimlar yawan raguwa: ≤3000/cm².
8. Ƙarfe na sama: ≤1E+11 atom/cm².
9. Lankwasawa da warpage: ≤ 20μm da ≤2μm, bi da bi.
Waɗannan halayen suna yin 8-inch silicon carbide substrates suna da mahimman ƙimar aikace-aikacen a cikin kera na'urorin lantarki masu zafi, mai ƙarfi da ƙarfi.

8inch silicon carbide wafer yana da aikace-aikace da yawa.

1. Na'urorin wutar lantarki: SiC wafers ana amfani da su sosai a cikin kera na'urorin lantarki na lantarki kamar wutar lantarki MOSFETs (metal-oxide-semiconductor field-effect transistor), Schottky diodes, da kuma haɗin haɗin wutar lantarki. Saboda babban ƙarfin wutar lantarki, babban ƙarfin rugujewa, da kuma babban motsi na lantarki na SiC, waɗannan na'urori za su iya cimma ingantacciyar jujjuyawar wutar lantarki mai ƙarfi a cikin yanayin zafi mai ƙarfi, ƙarfin wutar lantarki, da yanayin mitoci.

2. Optoelectronic na'urorin: SiC wafers suna taka muhimmiyar rawa a cikin na'urorin optoelectronic, ana amfani da su don kera masu gano hoto, diodes laser, tushen ultraviolet, da dai sauransu. Silicon carbide's maɗaukakin gani da kayan lantarki ya sa ya zama kayan zaɓi, musamman a aikace-aikacen da ke buƙatar yanayin zafi mai zafi. manyan mitoci, da manyan matakan iko.

3. Mitar Rediyo (RF) Na'urori: Hakanan ana amfani da guntuwar SiC don kera na'urorin RF irin su amplifiers na RF, manyan juzu'i, firikwensin RF, da ƙari. Babban kwanciyar hankali na SiC, halayen mitoci masu girma, da ƙarancin asara sun sa ya dace don aikace-aikacen RF kamar sadarwa mara waya da tsarin radar.

4.High-temperature Electronics: Saboda girman kwanciyar hankali na thermal da zafin jiki na zafin jiki, ana amfani da wafers na SiC don samar da kayan lantarki da aka tsara don yin aiki a cikin yanayin zafi mai zafi, ciki har da wutar lantarki mai zafi mai zafi, na'urori masu auna sigina, da masu sarrafawa.

Babban hanyoyin aikace-aikacen 8-inch silicon carbide substrate 4H-N nau'in sun haɗa da kera na'urori masu zafin jiki, mai ƙarfi, da na'urorin lantarki masu ƙarfi, musamman a fannonin na'urorin lantarki na kera motoci, makamashin hasken rana, ƙarfin iska, wutar lantarki. locomotives, sabobin, kayan aikin gida, da motocin lantarki. Bugu da ƙari, na'urori irin su SiC MOSFETs da Schottky diodes sun nuna kyakkyawan aiki a cikin sauyawa mitoci, gwaje-gwaje na gajeren lokaci, da aikace-aikacen inverter, suna amfani da su a cikin wutar lantarki.

Ana iya daidaita XKH tare da kauri daban-daban bisa ga buƙatun abokin ciniki. Daban-daban na rashin ƙarfi da jiyya na goge goge suna samuwa. Ana tallafawa nau'ikan doping daban-daban (kamar nitrogen doping). XKH na iya ba da tallafin fasaha da sabis na shawarwari don tabbatar da cewa abokan ciniki zasu iya magance matsaloli a cikin tsarin amfani. Matsakaicin 8-inch silicon carbide substrate yana da fa'idodi masu mahimmanci dangane da raguwar farashi da haɓaka iya aiki, wanda zai iya rage farashin guntu naúrar da kusan 50% idan aka kwatanta da madaidaicin inch 6. Bugu da ƙari, ƙãra kauri na ƙwanƙwasa 8-inch yana taimakawa rage karkatar da juzu'i da warping a gefen mashin ɗin, don haka inganta yawan amfanin ƙasa.