Wafer SiC silicon carbide mai inci 8 4H-N nau'in 0.5mm na matakin samarwa na bincike na musamman wanda aka goge shi da kyau

Wafer SiC silicon carbide mai inci 8, nau'in 4H-N, matakin bincike na musamman, wanda aka goge shi da kyau, an nuna shi Hoton da aka nuna

Takaitaccen Bayani:

Silicon carbide (SiC), wanda aka fi sani da silicon carbide, wani sinadari ne mai dauke da silicon da carbon tare da dabarar sinadarai ta SiC. Ana amfani da SiC a cikin na'urorin lantarki na semiconductor waɗanda ke aiki a yanayin zafi mai yawa ko matsin lamba mai yawa, ko duka biyun. SiC kuma yana ɗaya daga cikin mahimman abubuwan LED, abu ne da aka saba amfani da shi don haɓaka na'urorin GaN, kuma ana iya amfani da shi azaman wurin nutsewa mai zafi don LEDs masu ƙarfi.
Substrate na silicon carbide mai inci 8 muhimmin ɓangare ne na ƙarni na uku na kayan semiconductor, wanda ke da halaye na ƙarfin filin fashewa mai yawa, ƙarfin watsa zafi mai yawa, ƙimar jikewar electrons mai yawa, da sauransu, kuma ya dace da yin na'urorin lantarki masu zafi mai yawa, ƙarfin lantarki mai yawa, da ƙarfin lantarki mai yawa. Manyan fannonin aikace-aikacensa sun haɗa da motocin lantarki, jigilar jirgin ƙasa, watsa wutar lantarki mai ƙarfi da canji, hasken rana, sadarwa ta 5G, ajiyar makamashi, cibiyoyin bayanai na sararin samaniya, da cibiyoyin bayanai na makamashin AI.

Aika mana imel

Siffofi

Babban fasalulluka na nau'in silicon carbide mai inci 8 mai siffar 4H-N sun haɗa da:

1. Yawan ƙwayoyin microtubule: ≤ 0.1/cm² ko ƙasa da haka, kamar yawan ƙwayoyin microtubule ya ragu sosai zuwa ƙasa da 0.05/cm² a wasu samfura.
2. Rabon siffar lu'ulu'u: Rabon siffar lu'ulu'u na 4H-SiC ya kai 100%.
3. Juriya: 0.014 ~ 0.028 Ω·cm, ko kuma ya fi karko tsakanin 0.015-0.025 Ω·cm.
4. Tsananin saman: CMP Si Face Ra≤0.12nm.
5. Kauri: Yawanci 500.0±25μm ko 350.0±25μm.
6. Kusurwar Chamfering: 25±5° ko 30±5° don A1/A2 ya danganta da kauri.
7. Jimillar yawan tarkace: ≤3000/cm².
8. Gurɓatar ƙarfe a saman ƙasa: ≤1E+11 atoms/cm².
9. Lanƙwasawa da warpage: ≤ 20μm da ≤2μm, bi da bi.
Waɗannan halaye suna sa substrates na silicon carbide mai inci 8 su sami mahimmancin amfani wajen ƙera na'urorin lantarki masu zafi, mita mai yawa, da kuma ƙarfin lantarki mai yawa.

Wafer ɗin silicon carbide mai inci 8 yana da amfani da yawa.

1. Na'urorin Wutar Lantarki: Ana amfani da wafers na SiC sosai wajen kera na'urorin lantarki masu ƙarfi kamar su MOSFETs masu ƙarfi (transistors na ƙarfe-oxide-semiconductor field-effect), Schottky diodes, da kuma kayan haɗin wutar lantarki. Saboda yawan ƙarfin wutar lantarki, ƙarfin lantarki mai ƙarfi, da kuma ƙarfin lantarki mai ƙarfi na SiC, waɗannan na'urorin za su iya cimma ingantaccen juyar da wutar lantarki mai ƙarfi a cikin yanayin zafi mai yawa, ƙarfin lantarki mai ƙarfi, da kuma yanayin mita mai yawa.

2. Na'urorin Optoelectronic: Wafers na SiC suna taka muhimmiyar rawa a cikin na'urorin optoelectronic, waɗanda ake amfani da su don ƙera na'urorin gano hotuna, diodes na laser, tushen ultraviolet, da sauransu. Manyan halayen gani da na lantarki na silicon carbide sun sa ya zama abin da ake so, musamman a aikace-aikacen da ke buƙatar yanayin zafi mai yawa, mita mai yawa, da matakan ƙarfi mai yawa.

3. Na'urorin Mitar Rediyo (RF): Ana amfani da guntu na SiC don ƙera na'urorin RF kamar su amplifiers na wutar lantarki na RF, maɓallan mita masu yawa, na'urori masu auna RF, da ƙari. Babban kwanciyar hankali na zafi na SiC, halayen mita masu yawa, da ƙarancin asara sun sa ya dace da aikace-aikacen RF kamar sadarwa mara waya da tsarin radar.

4. Na'urorin lantarki masu yawan zafin jiki: Saboda yawan kwanciyar hankali da kuma sassaucin zafin jiki, ana amfani da wafers na SiC don samar da kayayyakin lantarki da aka tsara don aiki a cikin yanayin zafi mai yawa, gami da na'urorin lantarki masu ƙarfin zafi mai yawa, na'urori masu auna firikwensin, da masu sarrafawa.

Manyan hanyoyin amfani da nau'in silicon carbide mai inci 8 4H-N sun haɗa da ƙera na'urorin lantarki masu zafi, mita mai yawa, da kuma masu ƙarfi, musamman a fannoni na lantarki na mota, makamashin rana, samar da wutar lantarki ta iska, jiragen sama na lantarki, sabar, kayan aikin gida, da motocin lantarki. Bugu da ƙari, na'urori kamar SiC MOSFETs da Schottky diodes sun nuna kyakkyawan aiki a cikin mitoci masu sauyawa, gwaje-gwajen da aka yi a cikin gajeren lokaci, da aikace-aikacen inverter, suna haifar da amfani da su a cikin na'urorin lantarki masu ƙarfi.

Ana iya keɓance XKH da kauri daban-daban bisa ga buƙatun abokin ciniki. Akwai nau'ikan tsatsa da kuma hanyoyin gogewa daban-daban. Ana tallafawa nau'ikan hanyoyin gogewa daban-daban (kamar su nitrogen doping). XKH na iya samar da tallafin fasaha da ayyukan ba da shawara don tabbatar da cewa abokan ciniki za su iya magance matsaloli yayin amfani. Tsarin silicon carbide mai inci 8 yana da fa'idodi masu mahimmanci dangane da rage farashi da ƙaruwar ƙarfin aiki, wanda zai iya rage farashin guntu naúrar da kusan kashi 50% idan aka kwatanta da substrate mai inci 6. Bugu da ƙari, ƙaruwar kauri na substrate mai inci 8 yana taimakawa rage karkacewar geometric da karkatar da gefuna yayin injin, ta haka yana inganta yawan amfanin ƙasa.