Wafer Lithium Niobate Inci 8 LiNbO3 LN
Cikakken Bayani
| diamita | 200±0.2mm |
| babban lanƙwasa | 57.5mm, Girman |
| Hanya | 128Y-Yanke, X-Yanke, Z-Yanke |
| Kauri | 0.5±0.025mm, 1.0±0.025mm |
| saman | DSP da SSP |
| TTV | < 5µm |
| RUWAN BAKI | ± (20µm ~ 40um) |
| Warp | <= 20µm ~ 50µm |
| LTV (5mmx5mm) | <1.5 um |
| PLTV(<0.5um) | ≥98% (5mm*5mm) tare da gefen 2mm da aka cire |
| Ra | Ra<=5A |
| Karce & Tona (S/D) | 20/10, 40/20, 60/40 |
| Gefen | Haɗu da SEMI M1.2@tare da GC800#. na yau da kullun a nau'in C |
Takamaiman bayanai
Diamita: inci 8 (kimanin 200mm)
Kauri: Kauri na yau da kullun ya kama daga 0.5mm zuwa 1mm. Sauran kauri za a iya keɓance su bisa ga takamaiman buƙatu.
Tsarin lu'ulu'u: Babban tsarin lu'ulu'u na gama gari shine tsarin lu'ulu'u mai yankewa 128Y, yanke-Z da yanke-X, kuma ana iya samar da sauran tsarin lu'ulu'u dangane da takamaiman aikace-aikacen.
Fa'idodin Girma: Wafers ɗin serrata carp mai inci 8 suna da fa'idodi da yawa akan ƙananan wafers:
Babban yanki: Idan aka kwatanta da wafers masu inci 6 ko inci 4, wafers masu inci 8 suna samar da babban yanki na saman kuma suna iya ɗaukar ƙarin na'urori da da'irori masu haɗawa, wanda ke haifar da ƙaruwar ingancin samarwa da yawan amfanin ƙasa.
Mafi girman yawa: Ta hanyar amfani da wafers mai inci 8, ana iya samun ƙarin na'urori da abubuwan haɗin gwiwa a cikin yanki ɗaya, wanda ke ƙara haɗin kai da yawan na'urori, wanda hakan ke ƙara haɓaka aikin na'urar.
Ingancin daidaito: Manyan wafers suna da daidaito mafi kyau a tsarin samarwa, wanda ke taimakawa wajen rage bambancin tsarin samarwa da kuma inganta aminci da daidaiton samfur.
Wafers ɗin L da LN masu inci 8 suna da diamita iri ɗaya da wafers ɗin silicon na yau da kullun kuma suna da sauƙin haɗawa. A matsayin kayan "matatar SAW mai haɗin gwiwa" mai aiki mai ƙarfi wanda zai iya ɗaukar madaurin mita mai yawa.
Cikakken Zane





