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2 inch 50.8mm Sapphire Wafer C-Plane M-jirgin sama R-jirgin sama A-jirgin Kauri 350um 430um 500um

2 inch 50.8mm Sapphire Wafer C-Plane M-jirgin sama R-jirgin sama A-jirgin Kauri 350um 430um 500um Featured Image
  • 2 inch 50.8mm Sapphire Wafer C-Plane M-jirgin sama R-jirgin sama A-jirgin Kauri 350um 430um 500um
  • 2 inch 50.8mm Sapphire Wafer C-Plane M-jirgin sama R-jirgin sama A-jirgin Kauri 350um 430um 500um
  • 2 inch 50.8mm Sapphire Wafer C-Plane M-jirgin sama R-jirgin sama A-jirgin Kauri 350um 430um 500um

Takaitaccen Bayani:

Sapphire wani abu ne na keɓaɓɓen haɗe-haɗe na zahiri, sinadarai da kaddarorin gani, wanda ke sa shi jure yanayin zafi mai zafi, girgizar zafi, yazawar ruwa da yashi, da kuma zazzagewa.


Cikakken Bayani

Tags samfurin

Ƙayyadaddun hanyoyin daidaitawa daban-daban

Gabatarwa

C (0001)-Axis

R (1-102)-Axis

M (10-10) -Axis

A(11-20)-Axis
Dukiyar jiki

C axis yana da haske na crystal, sauran gatura kuma suna da mummunan haske.Jirgin C yana lebur, zai fi dacewa a yanke.

Jirgin saman R ya fi A.

 M jirgin sama an tako serrated, ba sauki yanke, sauki yanke. Taurin A-jirgin yana da mahimmanci fiye da na C-jirgin sama, wanda aka bayyana a cikin juriya na lalacewa, juriya da tsayin daka;Side A-jirgin sama ne na zigzag, wanda yake da sauƙin yanke;
Aikace-aikace

C-daidaitacce sapphire substrates ana amfani da su girma III-V da II-VI ajiya fina-finan, kamar gallium nitride, wanda zai iya samar da blue LED kayayyakin, Laser diodes, da infrared gano aikace-aikace.
Wannan shi ne yafi saboda tsarin ci gaban crystal na sapphire tare da C-axis ya balaga, farashin yana da ƙananan ƙananan, kayan jiki da na sinadarai sun kasance barga, da fasaha na epitaxy a kan jirgin C-plane ya balaga da kwanciyar hankali.

R-daidaitacce girma na daban-daban ajiya na silicon extrasystals, amfani da microelectronics hadedde da'irori.
Bugu da ƙari, za a iya samar da na'urori masu sauri da kuma na'urori masu auna matsa lamba a cikin tsarin samar da fina-finai na ci gaban silicon epitaxial.Hakanan za'a iya amfani da nau'in nau'in nau'in nau'in R a cikin samar da gubar, sauran abubuwan haɓakawa, manyan juriya masu ƙarfi, gallium arsenide.

 Ana amfani da shi galibi don haɓaka fina-finan epitaxial na GaN mara iyaka ko rabin-polar don haɓaka ingantaccen haske. A-daidaitacce zuwa ga substrate yana samar da daidaitaccen izini / matsakaici, kuma ana amfani da babban matakin rufewa a cikin fasahar microelectronics matasan.Za a iya samar da superconductors masu zafi daga A-base elongated lu'ulu'u.
Ƙarfin sarrafawa Samfurin Sapphire Substrate (PSS): A cikin nau'i na Girma ko Etching, nanoscale takamaiman tsarin ƙirar microstructure na yau da kullun an tsara su kuma an yi su akan sapphire substrate don sarrafa nau'in fitowar haske na LED, da rage bambance-bambance tsakanin GaN da ke girma akan sapphire substrate. , haɓaka ingancin epitaxy, da haɓaka ƙimar ƙima na ciki na LED da haɓaka haɓakar haɓakar haske.
Bugu da kari, sapphire prism, madubi, ruwan tabarau, rami, mazugi da sauran sassa na tsarin za a iya musamman bisa ga abokin ciniki bukatun.

Sanarwar dukiya

 Yawan yawa Tauri narke batu Indexididdigar raɗaɗi (na bayyane da infrared) Watsawa (DSP) Dielectric akai-akai
3.98g/cm 3 9 (mohs) 2053 ℃ 1.762 ~ 1.770 ≥85% 11.58@300K a C axis (9.4 a Axis)

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