50.8mm/100mm AlN Samfurin akan samfurin NPSS/FSS AlN akan sapphire

50.8mm/100mm AlN Samfurin akan samfurin NPSS/FSS AlN akan Hoton Sapphire Feat

Takaitaccen Bayani:

AlN-On-Sapphire yana nufin haɗuwa da kayan da ake girma a cikin fina-finan nitride na aluminum akan sapphire substrates. A cikin wannan tsari, za a iya girma fim ɗin nitride mai inganci ta hanyar sinadarai mai tururi (CVD) ko organometrical chemical vapor deposition (MOCVD), wanda ke sa fim ɗin nitride na aluminum da sapphire substrate suna da kyakkyawar haɗuwa. Fa'idodin wannan tsarin shine cewa aluminum nitride yana da haɓakar haɓakar thermal, babban kwanciyar hankali na sinadarai da kyawawan kaddarorin gani, yayin da sapphire substrate yana da kyawawan kaddarorin inji da thermal da bayyana gaskiya.

Aika mana imel

Siffofin

AlN-On-Sapphire

Ana iya amfani da AlN-On-Sapphire don kera na'urorin lantarki iri-iri, kamar:
1. LED kwakwalwan kwamfuta: LED kwakwalwan kwamfuta yawanci yi da aluminum nitride fina-finai da sauran kayan. Ana iya inganta inganci da kwanciyar hankali na LEDs ta amfani da wafers na AlN-On-Sapphire azaman madaidaicin kwakwalwan LED.
2. Lasers: AlN-On-Sapphire wafers kuma za a iya amfani da su a matsayin substrates ga Laser, wanda aka saba amfani da magani, sadarwa, da kayan sarrafa.
3. Kwayoyin Rana: Samar da ƙwayoyin hasken rana na buƙatar amfani da kayan aiki kamar aluminum nitride. AlN-On-Sapphire a matsayin substrate na iya inganta inganci da rayuwar ƙwayoyin rana.
4. Sauran na'urorin optoelectronic: AlN-On-Sapphire wafers kuma za a iya amfani da su don kera masu gano hoto, na'urorin optoelectronic, da sauran na'urorin optoelectronic.

A ƙarshe, AlN-On-Sapphire wafers ana amfani da su sosai a cikin filin opto-electrical saboda yawan zafin wutar lantarki, babban kwanciyar hankali na sinadarai, ƙananan hasara da kyawawan kaddarorin gani.

50.8mm/100mm AlN Samfura akan NPSS/FSS

Abu	Jawabi
Bayani	Samfurin AlN-on-NPSS	Samfurin AlN-on-FSS
Wafer diamita	50.8mm, 100mm
Substrate	c-jirgin sama NPSS	C-plane Planar Sapphire (FSS)
Kauri Substrate	50.8mm, 100mmc-jirgin Planar Sapphire (FSS) 100mm: 650 um
Kauri na AIN epi-Layer	3 ~ 4 um (manufa: 3.3um)
Gudanarwa	Insulating
Surface	Kamar yadda girma
	RMS <1nm	RMS <2nm
Bayan baya	Nika
FWHM(002)XRC	< 150 kashi	< 150 kashi
FWHM(102)XRC	< 300 sak	< 300 sak
Ƙarƙashin Ƙarfi	<2mm	<3mm
Matsakaicin matakin farko	jirgin sama +0.1°
Tsawon lebur na farko	50.8mm: 16+/-1 mm 100mm: 30+/-1 mm
Kunshin	Kunshe a cikin akwatin jigilar kaya ko kwandon wafer guda ɗaya