50.8mm/100mm AlN Samfurin akan samfurin NPSS/FSS AlN akan sapphire

Takaitaccen Bayani:

AlN-On-Sapphire yana nufin haɗuwa da kayan da ake girma a cikin fina-finan nitride na aluminum akan sapphire substrates. A cikin wannan tsari, za a iya girma fim ɗin nitride mai inganci ta hanyar sinadarai mai tururi (CVD) ko organometrical chemical vapor deposition (MOCVD), wanda ke sa fim ɗin nitride na aluminum da sapphire substrate suna da kyakkyawar haɗuwa. Fa'idodin wannan tsarin shine cewa aluminum nitride yana da haɓakar haɓakar thermal, babban kwanciyar hankali na sinadarai da kyawawan kaddarorin gani, yayin da sapphire substrate yana da kyawawan kaddarorin inji da thermal da bayyana gaskiya.


Cikakken Bayani

Tags samfurin

AlN-On-Sapphire

Ana iya amfani da AlN-On-Sapphire don kera na'urorin lantarki iri-iri, kamar:
1. LED kwakwalwan kwamfuta: LED kwakwalwan kwamfuta yawanci yi da aluminum nitride fina-finai da sauran kayan. Ana iya inganta inganci da kwanciyar hankali na LEDs ta amfani da wafers na AlN-On-Sapphire azaman madaidaicin kwakwalwan LED.
2. Lasers: AlN-On-Sapphire wafers kuma za a iya amfani da su a matsayin substrates ga Laser, wanda aka saba amfani da magani, sadarwa, da kayan sarrafa.
3. Kwayoyin Rana: Samar da ƙwayoyin hasken rana na buƙatar amfani da kayan aiki kamar aluminum nitride. AlN-On-Sapphire a matsayin substrate na iya inganta inganci da rayuwar ƙwayoyin rana.
4. Sauran na'urorin optoelectronic: Hakanan za'a iya amfani da wafers na AlN-On-Sapphire don kera masu gano hoto, na'urorin optoelectronic, da sauran na'urorin optoelectronic.

A ƙarshe, AlN-On-Sapphire wafers ana amfani da su sosai a cikin filin opto-electrical saboda yawan zafin wutar lantarki, babban kwanciyar hankali na sinadarai, ƙananan hasara da kyawawan kayan gani.

50.8mm/100mm AlN Samfura akan NPSS/FSS

Abu Jawabi
Bayani Samfurin AlN-on-NPSS Samfurin AlN-on-FSS
Wafer diamita 50.8mm, 100mm
Substrate c-jirgin sama NPSS C-plane Planar Sapphire (FSS)
Kauri Substrate 50.8mm, 100mmc-jirgin Planar Sapphire (FSS) 100mm: 650 um
Kauri na AIN epi-Layer 3 ~ 4 um (manufa: 3.3um)
Gudanarwa Insulating

Surface

Kamar yadda girma
RMS <1nm RMS <2nm
Bayan baya Nika
FWHM(002)XRC < 150 kashi < 150 kashi
FWHM(102)XRC < 300 sak < 300 sak
Ƙarƙashin Ƙarfi <2mm <3mm
Matsakaicin matakin farko jirgin sama +0.1°
Tsawon lebur na farko 50.8mm: 16+/-1 mm 100mm: 30+/-1 mm
Kunshin Kunshe cikin akwatin jigilar kaya ko kwandon wafer guda ɗaya

Cikakken zane

Samfurin FSS AlN akan sapphire3
Samfurin FSS AlN akan sapphire4

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