50.8mm 2inch GaN akan wafer sapphire Epi-Layer wafer
Aikace-aikacen gallium nitride GaN epitaxial takardar
Dangane da aikin gallium nitride, gallium nitride epitaxial chips sun fi dacewa da babban iko, babban mitar, da ƙananan aikace-aikacen wutar lantarki.
Yana nunawa a cikin:
1) Babban bandgap: Babban bandgap yana haɓaka matakin ƙarfin lantarki na na'urorin gallium nitride kuma yana iya fitar da ƙarfi sama da na'urorin gallium arsenide, wanda ya dace musamman ga tashoshin sadarwa na 5G, radar soja da sauran fannoni;
2) Babban ƙarfin jujjuyawa: juriya ga na'urorin lantarki na gallium nitride na canza wutar lantarki shine umarni 3 na girma ƙasa da na na'urorin silicon, wanda zai iya rage asarar kan-canzawa;
3) Matsayi na Highery Highler: Babban aikin Helikal nitride ya sa ya kasance suna da babban iko dilces aiki, dace da samar da babban iko, babban-zazzabi da sauran filayen na'urori;
4) Rushe ƙarfin filin lantarki: Ko da yake rushewar ƙarfin filin lantarki na gallium nitride yana kusa da na silicon nitride, saboda tsarin semiconductor, rashin daidaituwa na kayan abu da sauran dalilai, haƙurin ƙarfin lantarki na na'urorin gallium nitride yawanci kusan 1000V, kuma aminci amfani ƙarfin lantarki yawanci kasa 650V.
| Abu | GaN-TCU-C50 | GaN-TCN-C50 | GaN-TCP-C50 |
| Girma | e 50.8mm ± 0.1mm | ||
| Kauri | 4.5 ± 0.5 um | 4.5 ± 0.5um | |
| Gabatarwa | C-jirgin sama (0001) ± 0.5° | ||
| Nau'in Gudanarwa | Nau'in N (Ba a kwance ba) | N-type (Si-doped) | Nau'in P (Mg-doped) |
| Juriya (3O0K) | <0.5Q・cm | <0.05 Q・cm | ~ 10 q da cm |
| Tattaunawar Mai ɗaukar kaya | <5x1017cm-3 | > 1 x1018cm-3 | > 6 x 1016 cm-3 |
| Motsi | ~ 300 cm2/Vs | ~ 200 cm2/Vs | ~ 10 cm2/Vs |
| Yawan Ragewa | Kasa da 5x108cm-2(ƙididdige ta FWHMs na XRD) | ||
| Tsarin substrate | GaN akan Sapphire (Misali: Zaɓin SSP: DSP) | ||
| Wurin Sama Mai Amfani | > 90% | ||
| Kunshin | Kunshe a cikin ɗaki mai tsabta na aji 100, a cikin kaset na 25pcs ko kwantena wafer guda ɗaya, ƙarƙashin yanayin nitrogen. | ||
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