Wafer SiC mai inci 6 Sifili mai matakin MPD na samarwa.
Nau'in 4H/6H-P SiC Composite Substrates Teburin sigogi na gama gari
6 Silinda mai diamita inci (SiC) Substrate Ƙayyadewa
| Matsayi | Sifili Samar da MPDMaki (Z) maki) | Tsarin Samarwa na DaidaitacceMaki (P) maki) | Daraja ta Karya (D maki) | ||
| diamita | 145.5 mm ~ 150.0 mm | ||||
| Kauri | 350 μm ± 25 μm | ||||
| Tsarin Wafer | -Offaxis: 2.0°-4.0°zuwa [1120] ± 0.5° don 4H/6H-P, A kan axis: 〈111〉± 0.5° don 3C-N | ||||
| Yawan bututun micropipe | 0 cm-2 | ||||
| Juriya | nau'in p-type 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-type 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Babban Tsarin Faɗi | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Babban Tsawon Lebur | 32.5 mm ± 2.0 mm | ||||
| Tsawon Lebur na Biyu | 18.0 mm ± 2.0 mm | ||||
| Tsarin Faɗi na Biyu | Fuskar silicon sama: 90° CW. daga Prime flat ± 5.0° | ||||
| Keɓewa a Gefen | 3 mm | 6 mm | |||
| LTV/TTV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Taurin kai | Yaren mutanen Poland Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Fashewar Gefen Ta Hanyar Haske Mai Tsanani | Babu | Tsawon jimilla ≤ 10 mm, tsawonsa ɗaya ≤ 2 mm | |||
| Faranti na Hex ta Haske Mai Tsanani | Yankin da aka tara ≤0.05% | Yankin da aka tara ≤0.1% | |||
| Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi | Babu | Yankin da aka tara≤3% | |||
| Abubuwan da ke tattare da Carbon na gani | Yankin da aka tara ≤0.05% | Yankin da aka tara ≤3% | |||
| Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani | Babu | Tsawon jimla ≤1 × diamita na wafer | |||
| Ƙwayoyin Gefen Suna da Haske Mai Tsanani | Babu wanda aka yarda da faɗin da zurfin ≥0.2mm | An yarda da 5, ≤1 mm kowanne | |||
| Gurɓatar Fuskar Silicon Ta Hanyar Ƙarfi Mai Girma | Babu | ||||
| Marufi | Akwatin Wafer Mai Yawa ko Akwatin Wafer Guda ɗaya | ||||
Bayanan kula:
※ Iyakokin lahani sun shafi dukkan saman wafer sai dai yankin da aka ware gefen. # Ya kamata a duba ƙyallen a fuskar Si o
Wafer SiC mai inci 6 mai nau'in 4H/6H-P tare da matakin Zero MPD da samarwa ko matakin dummy ana amfani da shi sosai a cikin aikace-aikacen lantarki na zamani. Kyakkyawan watsa wutar lantarki mai zafi, ƙarfin lantarki mai ƙarfi, da juriya ga yanayi mai tsauri sun sa ya dace da na'urorin lantarki masu ƙarfi, kamar masu sauya wutar lantarki mai ƙarfi da inverters. Matsayin Zero MPD yana tabbatar da ƙarancin lahani, yana da mahimmanci ga na'urori masu aminci. Ana amfani da wafers masu inganci a cikin manyan masana'antun na'urorin wutar lantarki da aikace-aikacen RF, inda aiki da daidaito suke da mahimmanci. A gefe guda, ana amfani da wafers masu inganci don daidaita tsari, gwajin kayan aiki, da kuma yin samfuri, wanda ke ba da damar daidaita inganci a cikin yanayin samar da semiconductor.
Fa'idodin abubuwan haɗin gwiwa na N-type SiC sun haɗa da
- Babban Tsarin Zafin Jiki: Wafer ɗin 4H/6H-P SiC yana wargaza zafi yadda ya kamata, wanda hakan ya sa ya dace da amfani da na'urorin lantarki masu zafi da ƙarfi sosai.
- Babban Wutar Lantarki Mai Rushewa: Ikonsa na sarrafa manyan ƙarfin lantarki ba tare da gazawa ba ya sa ya dace da amfani da na'urorin lantarki masu ƙarfi da kuma amfani da manyan ƙarfin lantarki.
- Sifili MPD (Matsalar Bututu Mai Ƙaramin Jini): Ƙarancin lahani yana tabbatar da inganci da aiki mai kyau, wanda yake da mahimmanci ga na'urorin lantarki masu buƙata.
- Matsayin Samarwa don Masana'antu Mai Yawa: Ya dace da manyan na'urori masu amfani da semiconductor masu inganci tare da ƙa'idodi masu tsauri.
- Daraja ta Dummy don Gwaji da Daidaitawa: Yana ba da damar inganta tsari, gwajin kayan aiki, da kuma yin samfuri ba tare da amfani da wafers masu tsadar samarwa ba.
Gabaɗaya, wafers ɗin SiC mai inci 6 na 4H/6H-P tare da matakin Zero MPD, matakin samarwa, da matakin dummy suna ba da fa'idodi masu mahimmanci ga haɓaka na'urorin lantarki masu aiki mai girma. Waɗannan wafers ɗin suna da amfani musamman a aikace-aikacen da ke buƙatar aiki mai zafi, yawan ƙarfi, da ingantaccen canjin wutar lantarki. Matsayin Zero MPD yana tabbatar da ƙarancin lahani don ingantaccen aikin na'ura, yayin da wafers ɗin da ke samar da kayayyaki suna tallafawa manyan masana'antu tare da tsauraran matakan sarrafawa. Wafers ɗin da ke samar da kayayyaki masu inganci suna ba da mafita mai inganci don inganta tsari da daidaita kayan aiki, wanda hakan ke sa su zama dole don ƙera semiconductor mai inganci.
Cikakken Zane
