4H/6H-P 6inch SiC wafer Zero matakin MPD Samar da Grade Dummy Grade

Takaitaccen Bayani:

4H / 6H-P nau'in 6-inch SiC wafer wani abu ne na semiconductor da aka yi amfani da shi a cikin masana'antar na'urar lantarki, wanda aka sani don kyakkyawan yanayin zafi, babban ƙarfin rushewa, da juriya ga yanayin zafi da lalata. Matsayin samarwa da Zero MPD (Micro Pipe Defect) sa yana tabbatar da amincinsa da kwanciyar hankali a cikin kayan lantarki mai ƙarfi. Ana amfani da wafer-sa wafers don kera manyan na'urori tare da ingantacciyar kulawa mai inganci, yayin da ake amfani da wafers-grades da farko don aiwatar da debugging da gwajin kayan aiki. Fitattun kaddarorin na SiC sun sanya shi yin amfani da shi sosai a cikin matsanancin zafi, ƙarfin lantarki, da manyan na'urorin lantarki, kamar na'urorin wuta da na'urorin RF.

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Tags samfurin

4H/6H-P Nau'in SiC Combosite Substrates Common siga tebur

6 inch diamita Silicon Carbide (SiC) Substrate Ƙayyadaddun bayanai

Daraja			Zero MPD ProductionDarasi (Z Daraja)	Standard ProductionDarasi (P Daraja)	Dummy Grade (D Daraja)
Diamita			145.5mm ~ 150.0 mm
Kauri			350 μm ± 25 μm
Wafer Orientation			-Offaxis: 2.0 ° -4.0 ° zuwa [1120] ± 0.5 ° don 4H/6H-P, A kan axis: 〈111〉± 0.5° don 3C-N
Maƙarƙashiya Maɗaukaki			0 cm - 2
Resistivity	p-nau'in 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-nau'in 3C-N		≤0.8 mΩ cm		≤1 m Ωꞏcm
Hanyar Farko ta Flat		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Tsawon Lantarki na Farko			32.5 mm ± 2.0 mm
Tsawon Lantarki na Sakandare			18.0 mm ± 2.0 mm
Gabatarwar Flat na Sakandare			Fuskar Silicon: 90° CW. daga Firayim lebur ± 5.0°
Ƙarƙashin Ƙarfi			3 mm ku		6 mm ku
LTV/TTV/Baka/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Tashin hankali			Yaren mutanen Poland Ra≤1 nm
			CMP Ra≤0.2 nm		≤0.5 nm
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara			Babu		Tsayin tarawa ≤ 10 mm, tsayi ɗaya≤2 mm
Hex Plates Ta Babban Haske mai ƙarfi			Tarin yanki ≤0.05%		Tarin yanki ≤0.1%
Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi			Babu		Tarin yanki≤3%
Haɗin Carbon Na gani			Tarin yanki ≤0.05%		Tarin yanki ≤3%
Silicon Surface Scratches By High Intensity Light			Babu		Tsayin tarawa≤1× diamita wafer
Edge Chips High By Intensity Light			Babu wanda aka halatta ≥0.2mm nisa da zurfinsa		5 izini, ≤1 mm kowanne
Gurɓatar Silicon Surface Ta Babban Ƙarfi			Babu
Marufi			Cassette mai yawa-wafer ko kwantena wafer guda ɗaya

Bayanan kula:

※ Iyakoki na lahani sun shafi gaba dayan farfajiyar wafer ban da yankin keɓe gefen. # Ya kamata a duba karce akan Si face o

Nau'in 4H/6H-P nau'in 6-inch SiC wafer tare da darajar MPD Zero da samarwa ko ƙimar dummy ana amfani dashi sosai a cikin aikace-aikacen lantarki na ci gaba. Kyawawan yanayin zafinsa, babban ƙarfin rugujewa, da juriya ga mahalli masu tsauri sun sa ya dace da na'urorin lantarki, irin su na'urori masu ƙarfin lantarki da inverters. Makin MPD na Zero yana tabbatar da ƙarancin lahani, mai mahimmanci ga manyan na'urori masu dogaro. Ana amfani da wafers masu daraja a cikin manyan masana'anta na na'urorin wuta da aikace-aikacen RF, inda aiki da daidaito ke da mahimmanci. Dummy-grade wafers, a gefe guda, ana amfani da su don daidaita tsari, gwajin kayan aiki, da samfuri, yana ba da damar ingantaccen kulawar inganci a cikin yanayin samar da semiconductor.

Fa'idodin nau'in nau'in SiC mai haɗaka sun haɗa da

High thermal Conductivity: 4H / 6H-P SiC wafer da kyau yana watsar da zafi, yana sa ya dace da yanayin zafi da aikace-aikacen lantarki mai ƙarfi.
High Breakdown Voltage: Ƙarfinsa don ɗaukar manyan ƙarfin lantarki ba tare da gazawa ba ya sa ya dace da kayan aiki na lantarki da aikace-aikacen sauya wutar lantarki.
Zero MPD (Micro Pipe Defect) Matsayi: Ƙananan ƙarancin ƙarancin ƙima yana tabbatar da babban aminci da aiki, mai mahimmanci ga buƙatar na'urorin lantarki.
Ƙirƙirar-Mai daraja don Masana'antar taro: Ya dace da samar da manyan sikelin na'urorin semiconductor masu aiki tare da tsauraran matakan inganci.
Dummy-Grade don Gwaji da daidaitawa: Yana ba da damar haɓaka aiki, gwajin kayan aiki, da samfuri ba tare da yin amfani da wafers ɗin samarwa masu tsada ba.

Gabaɗaya, 4H/6H-P 6-inch SiC wafers tare da Zero MPD grade, samarwa sa, da dummy grade suna ba da fa'idodi masu mahimmanci don haɓaka na'urorin lantarki masu inganci. Waɗannan wafers suna da fa'ida musamman a aikace-aikacen da ke buƙatar aiki mai zafi, ƙarfin ƙarfin ƙarfi, da ingantaccen jujjuyawar wutar lantarki. Matsayin MPD na Zero yana tabbatar da ƙarancin lahani don ingantaccen aiki da kwanciyar hankali na na'ura, yayin da wafers ɗin samarwa suna goyan bayan manyan masana'antu tare da ingantattun kulawar inganci. Dummy-grade wafers suna ba da mafita mai inganci don haɓaka tsari da daidaita kayan aiki, yana mai da su maƙasudi don ƙirƙira madaidaicin semiconductor.