200mm 8inci GaN akan sapphire Epi-layer wafer substrate
Gabatarwar samfur
Substrate ɗin GaN-on-Sapphire mai inci 8 kayan semiconductor ne mai inganci wanda aka yi da Layer ɗin Gallium Nitride (GaN) wanda aka noma a kan wani abu mai suna Sapphire substrate. Wannan kayan yana ba da kyawawan halaye na jigilar lantarki kuma ya dace da ƙera na'urori masu ƙarfin lantarki da kuma masu yawan mita.
Hanyar Masana'antu
Tsarin kera shi ya ƙunshi haɓakar epitaxial na Layer GaN akan wani abu mai kama da Sapphire ta amfani da dabarun zamani kamar adana tururin sinadarai na ƙarfe-organic (MOCVD) ko kuma epitaxy na ƙwayoyin halitta (MBE). Ana gudanar da ajiyar a ƙarƙashin yanayi mai sarrafawa don tabbatar da ingancin lu'ulu'u mai yawa da daidaiton fim.
Aikace-aikace
Tsarin GaN-on-Sapphire mai inci 8 yana samun aikace-aikace masu yawa a fannoni daban-daban, ciki har da sadarwa ta microwave, tsarin radar, fasahar mara waya, da kuma optoelectronics. Wasu daga cikin aikace-aikacen da aka saba amfani da su sun haɗa da:
1. Amplifiers na wutar lantarki na RF
2. Masana'antar hasken LED
3. Na'urorin sadarwa na hanyar sadarwa mara waya
4. Na'urorin lantarki don yanayin zafi mai yawa
5. Ona'urorin lantarki na ptoelectronic
Bayanin Samfura
- Girma: Girman substrate shine inci 8 (200 mm) a diamita.
- Ingancin Sama: An goge saman zuwa wani matakin santsi mai yawa kuma yana nuna kyakkyawan inganci kamar madubi.
- Kauri: Ana iya keɓance kauri na GaN bisa ga takamaiman buƙatu.
- Marufi: An naɗe substrate ɗin a hankali a cikin kayan hana lalacewa don hana lalacewa yayin jigilar kaya.
- Faɗin Gabatarwa: Faɗin gaba yana da takamaiman faɗin gaba don taimakawa wajen daidaita wafer da sarrafawa yayin aiwatar da ƙera na'urori.
- Sauran sigogi: Ana iya tsara takamaiman kauri, juriya, da yawan sinadarin da ke cikinsa bisa ga buƙatun abokin ciniki.
Tare da ingantattun kayan aikinsa da aikace-aikacensa masu amfani da yawa, substrate na GaN-on-Sapphire mai inci 8 zaɓi ne mai aminci don haɓaka na'urorin semiconductor masu aiki mai girma a masana'antu daban-daban.
Banda GaN-On-Sapphire, za mu iya bayarwa a fannin aikace-aikacen na'urorin wutar lantarki, dangin samfurin sun haɗa da wafers na epitaxial na AlGaN/GaN-on-Si mai inci 8 da wafers na epitaxial na P-cap na AlGaN/GaN-on-Si mai inci 8. A lokaci guda, mun ƙirƙiri aikace-aikacen fasahar epitaxial na GaN mai inci 8 a cikin filin microwave, kuma mun ƙirƙiri wafer na epitaxy na AlGaN/GAN-on-HR Si mai inci 8 wanda ya haɗu da babban aiki tare da babban girma, ƙarancin farashi kuma ya dace da daidaitaccen sarrafa na'urar inci 8. Baya ga gallium nitride mai tushen silicon, muna kuma da layin samfur na wafers na epitaxial na AlGaN/GaN-on-SiC don biyan buƙatun abokan ciniki don kayan epitaxial na gallium nitride mai tushen silicon.
Cikakken Zane
