200mm 8inch GaN akan sapphire Epi-Layer wafer substrate
Gabatarwar samfur
Tushen GaN-on-Sapphire mai inci 8 wani ingantaccen abu ne mai inganci wanda ya ƙunshi Layer Gallium Nitride (GaN) wanda ke tsiro da sapphire substrate. Wannan kayan yana ba da kyawawan kaddarorin sufuri na lantarki kuma yana da kyau don ƙirƙira manyan na'urorin semiconductor masu ƙarfi da mitar mitoci.
Hanyar sarrafawa
Tsarin masana'antu ya haɗa da haɓakar epitaxial na Layer GaN akan ma'aunin Sapphire ta amfani da ingantattun dabaru kamar ƙarfe-kwakwalwar sinadari na tururi (MOCVD) ko molecular beam epitaxy (MBE). Ana aiwatar da ƙaddamarwa a ƙarƙashin yanayin sarrafawa don tabbatar da ingancin kristal mai girma da daidaiton fim.
Aikace-aikace
Tsarin GaN-on-Sapphire mai inch 8 yana samun aikace-aikace masu yawa a fannoni daban-daban da suka haɗa da sadarwar microwave, radar, fasaha mara waya, da optoelectronics. Wasu daga cikin aikace-aikacen gama gari sun haɗa da:
1. RF ikon amplifiers
2. LED lighting masana'antu
3. Na'urorin sadarwar sadarwar mara waya
4. Na'urorin lantarki don yanayin zafi mai zafi
5. Ona'urorin ptoelectronic
Ƙayyadaddun samfur
-Dimension: Girman substrate shine inci 8 (200 mm) a diamita.
- Ingancin saman: An goge saman zuwa babban matakin santsi kuma yana nuna kyakkyawan ingancin madubi.
- Kauri: Za'a iya keɓance kauri na Layer GaN dangane da takamaiman buƙatu.
- Marufi: A hankali an shirya madaidaicin a cikin kayan anti-static don hana lalacewa yayin tafiya.
- Flat daidaitawa: Substrate ɗin yana da ƙayyadaddun shimfidar wuri don taimakawa cikin daidaitawar wafer da sarrafawa yayin aikin ƙirƙira na'urar.
- Sauran sigogi: ƙayyadaddun ƙayyadaddun kauri, tsayayya, da maida hankali na dopant ana iya keɓance su gwargwadon buƙatun abokin ciniki.
Tare da ingantattun kaddarorin kayan sa da aikace-aikace iri-iri, 8-inch GaN-on-Sapphire substrate zaɓi ne abin dogaro don haɓaka manyan na'urorin semiconductor a masana'antu daban-daban.
Sai dai GaN-On-Sapphire, mu ma za mu iya bayarwa a fagen aikace-aikacen na'urar wutar lantarki, dangin samfurin sun haɗa da 8-inch AlGaN/GaN-on-Si epitaxial wafers da 8-inch P-cap AlGaN/GaN-on-Si epitaxial wafers. A lokaci guda, mun ƙirƙira aikace-aikacen fasahar Epitaxy na 8-inch ta nata a cikin filin microwave, kuma mun haɓaka 8-inch AlGaN / GAN-on-HR Si epitaxy wafer wanda ya haɗu da babban aiki tare da babban girman, ƙarancin farashi. kuma mai jituwa tare da daidaitaccen sarrafa na'urar inci 8. Baya ga gallium nitride na tushen silicon, muna kuma da layin samfur na AlGaN/GaN-on-SiC epitaxial wafers don biyan buƙatun abokan ciniki don kayan gallium nitride epitaxial na tushen silicon.
Cikakken zane
