2 inch Sic silicon carbide substrate 6H-N Nau'in 0.33mm 0.43mm polishing mai gefe biyu High thermal conductivity low ikon amfani

Takaitaccen Bayani:

Silicon carbide (SiC) wani abu ne mai faɗin rata semiconductor abu tare da kyakkyawan yanayin zafi da kwanciyar hankali. Nau'in nau'in 6H-N yana nuna cewa tsarinsa na crystal yana da hexagonal (6H), kuma "N" yana nuna cewa abu ne na nau'in N-nau'i, wanda yawanci ana samunsa ta hanyar doping nitrogen.
Silicon carbide substrate yana da kyawawan halaye na juriya mai ƙarfi, juriya mai zafi, babban aikin mita, da sauransu. Dangane da sabbin motocin makamashi, silicon carbide na iya taimakawa sabbin motocin makamashi don cimma nauyi da rage hasara, da haɓaka kewayon tuki; A fagen sadarwar 5G, ana iya amfani da shi don kera kayan aiki masu alaƙa; A cikin samar da wutar lantarki na photovoltaic zai iya inganta ingantaccen juzu'i; Filin zirga-zirgar jiragen kasa na iya amfani da yanayin zafinsa da halayen juriya mai tsayi.

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Wadannan su ne halaye na 2inch silicon carbide wafer

1. Taurin: Taurin Mohs kusan 9.2 ne.
2. Crystal tsarin: hexagonal lattice tsarin.
3. High thermal conductivity: thermal conductivity na SiC yana da yawa fiye da na silicon, wanda yake da amfani ga tasiri mai zafi.
4. Wide band rata: band rata na SiC ne game da 3.3eV, dace da high zafin jiki, high mita da kuma high iko aikace-aikace.
5. Rushewar filin lantarki da motsi na lantarki: Babban filin lantarki da kuma motsi na lantarki, wanda ya dace da na'urorin lantarki masu inganci kamar MOSFETs da IGBTs.
6. Chemical kwanciyar hankali da radiation juriya: dace da matsananci yanayi kamar sararin samaniya da kuma kasa tsaro. Kyakkyawan juriya na sinadarai, acid, alkali da sauran kaushi na sinadarai.
7. Babban ƙarfin injiniya: Ƙarfin ƙarfin injiniya mai kyau a ƙarƙashin yanayin zafi mai zafi da yanayin matsa lamba.
Ana iya amfani dashi a ko'ina cikin babban iko, babban mita da kayan aikin lantarki mai zafin jiki, irin su ultraviolet photodetectors, inverters photovoltaic, PCUs motar lantarki, da sauransu.

2inch silicon carbide wafer yana da aikace-aikace da yawa.

1.Power na'urorin lantarki: ana amfani da su don samar da wutar lantarki mai girma MOSFET, IGBT da sauran na'urori, ana amfani da su sosai a cikin wutar lantarki da motocin lantarki.

2.Rf na'urorin: A cikin kayan aikin sadarwa, ana iya amfani da SiC a cikin masu haɓakawa mai girma da kuma RF mai ƙarfi.

3.Photoelectric na'urorin: irin su SIC-tushen leds, musamman a blue da ultraviolet aikace-aikace.

4.Sensors: Saboda yawan zafin jiki da kuma juriya na sinadarai, ana iya amfani da simintin SiC don kera manyan firikwensin zafin jiki da sauran aikace-aikacen firikwensin.

5.Soja da sararin samaniya: saboda yawan zafin jiki na zafin jiki da kuma halayen ƙarfin ƙarfi, dace da amfani a cikin matsanancin yanayi.

Babban filayen aikace-aikacen nau'in 6H-N nau'in 2 "SIC substrate sun haɗa da sabbin motocin makamashi, watsa wutar lantarki mai ƙarfi da tashoshi masu canzawa, fararen kaya, manyan jiragen ƙasa masu sauri, injina, inverter photovoltaic, wadatar wutar lantarki da sauransu.

Ana iya daidaita XKH tare da kauri daban-daban bisa ga buƙatun abokin ciniki. Daban-daban na rashin ƙarfi da jiyya na goge goge suna samuwa. Ana tallafawa nau'ikan doping daban-daban (kamar nitrogen doping). Daidaitaccen lokacin isarwa shine makonni 2-4, ya danganta da gyare-gyare. Yi amfani da kayan marufi na anti-static da kumfa na anti-seismic don tabbatar da amincin ma'ajin. Zaɓuɓɓukan jigilar kaya iri-iri suna samuwa, kuma abokan ciniki za su iya duba matsayin kayan aiki a ainihin lokacin ta hanyar lambar bin diddigin da aka bayar. Bayar da goyon bayan fasaha da sabis na shawarwari don tabbatar da cewa abokan ciniki zasu iya magance matsaloli a cikin tsarin amfani.