Inci 2 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Kauri 350um 430um 500um
Bayyanar da hanyoyi daban-daban
| Hanya | C(0001)-Axis | R(1-102)-Axis | M(10-10) -Axis | A(11-20)-Axis | ||
| Kayayyakin zahiri | Axis ɗin C yana da hasken lu'ulu'u, sauran axis kuma suna da haske mai kama da na taba. Axis ɗin C yana da faɗi, zai fi kyau a yanke shi. | R-plane ya fi A ƙarfi kaɗan. | M plane yana da matakai masu tsayi, ba shi da sauƙin yankewa, mai sauƙin yankewa. | Taurin jirgin sama na A ya fi na C-plane ƙarfi, wanda ke bayyana a cikin juriyar lalacewa, juriyar karce da kuma tsananin tauri; Side A-plane jirgi ne mai siffar zigzag, wanda yake da sauƙin yankewa; | ||
| Aikace-aikace | Ana amfani da ƙananan sapphires masu tushen C don shuka fina-finan da aka ajiye a cikin III-V da II-VI, kamar gallium nitride, waɗanda zasu iya samar da samfuran LED masu launin shuɗi, diodes na laser, da aikace-aikacen na'urar gano infrared. | Girman substrate na nau'ikan silicon extrastals daban-daban da aka ajiye, waɗanda ake amfani da su a cikin da'irori masu haɗaka na microelectronics. | Ana amfani da shi galibi don shuka fina-finan GaN epitaxial marasa polar/semi-polar don inganta ingantaccen haske. | A-daidaitacce ga substrate yana samar da daidaito/matsakaici iri ɗaya, kuma ana amfani da babban matakin rufi a cikin fasahar microelectronics masu haɗaka. Ana iya samar da superconductors masu zafi mai yawa daga lu'ulu'u masu tsayi na A-base. | ||
| Ƙarfin sarrafawa | Tsarin Sapphire Substrate (PSS): A cikin nau'in Girma ko Etching, an tsara kuma an yi samfuran tsarin nanoscale na yau da kullun akan sapphire substrate don sarrafa nau'in hasken LED, da rage lahani daban-daban tsakanin GaN da ke girma akan sapphire substrate, inganta ingancin epitaxy, da haɓaka ingancin quantum na ciki na LED da kuma ƙara ingancin cire haske. Bugu da ƙari, ana iya keɓance sapphire prism, madubi, ruwan tabarau, rami, mazugi da sauran sassan tsarin bisa ga buƙatun abokin ciniki. | |||||
| Sanarwar kadarori | Yawan yawa | Tauri | wurin narkewa | Fihirisar haske (wanda ake iya gani da kuma infrared) | Canja wurin (DSP) | Dielectric constant |
| 3.98g/cm3 | 9 (masu) | 2053℃ | 1.762~1.770 | ≥85% | 11.58@300K a axis C (9.4 a axis A) | |
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