150mm 200mm 6inch 8inch GaN akan Silicon Epi-Layer wafer Gallium nitride epitaxial wafer

Takaitaccen Bayani:

6-inch GaN Epi-Layer wafer babban ingancin semiconductor abu ne wanda ya ƙunshi yadudduka na gallium nitride (GaN) wanda aka girma akan ƙaramin siliki. Kayan yana da kyawawan kaddarorin sufuri na lantarki kuma yana da kyau don kera manyan na'urorin semiconductor masu ƙarfi da mitoci.

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Cikakken Bayani

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Hanyar masana'anta

Tsarin masana'anta ya haɗa da haɓaka yadudduka na GaN akan ma'aunin sapphire ta amfani da ingantattun fasahohi kamar ƙarfe-kwakwalwar sinadari na tururi (MOCVD) ko molecular beam epitaxy (MBE). Ana aiwatar da tsarin ƙaddamarwa a ƙarƙashin yanayin sarrafawa don tabbatar da ingancin kristal da kuma fim ɗin uniform.

6inch GaN-On-Sapphire aikace-aikacen: 6-inch sapphire substrate chips ana amfani da su sosai a cikin sadarwar microwave, tsarin radar, fasaha mara waya da optoelectronics.

Wasu aikace-aikacen gama gari sun haɗa da

1. Rf ikon amplifier

2. LED lighting masana'antu

3. Kayan aikin sadarwa mara waya

4. Na'urorin lantarki a cikin yanayin zafi mai zafi

5. Optoelectronic na'urorin

Bayani dalla-dalla

- Girman: Diamita na substrate shine inci 6 (kimanin mm 150).

- Ingancin saman: An goge saman da kyau don samar da ingantaccen ingancin madubi.

- Kauri: Za a iya keɓance kauri na Layer GaN bisa ga takamaiman buƙatu.

- Marufi: Substrate an cika shi a hankali tare da kayan anti-static don hana lalacewa yayin sufuri.

- Matsayin gefuna: Substrate yana da takamaiman gefuna na matsayi waɗanda ke sauƙaƙe daidaitawa da aiki yayin shirye-shiryen na'urar.

- Sauran sigogi: takamaiman sigogi kamar bakin ciki, tsayayya da maida hankali na doping ana iya daidaita su gwargwadon buƙatun abokin ciniki.

Tare da ingantattun kaddarorin kayansu da aikace-aikace iri-iri, 6-inch sapphire substrate wafers zaɓi ne abin dogaro don haɓaka manyan na'urorin semiconductor a masana'antu daban-daban.

Substrate	6" 1mm <111> p-type Si	6" 1mm <111> p-type Si
Epi ThickAvg	~5 ku	~7 ku
Epi ThickUnif	<2%	<2%
Ruku'u	+/-45 ku	+/-45 ku
Fatsawa	<5mm	<5mm
A tsaye BV	> 1000V	> 1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
Farashin 2DEG.	~10¹³cm^-2	~10¹³cm^-2
Motsi	~ 2000 cm²/Vs (<2%)	~ 2000 cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)