12 Inch Sic Sigin Silicon Carbide Preme Fasali diamita 300mm Babban Girma 4h-n Ya dace da High Worl na'urar dissication
Halaye na kayan
1. Haske mai zafi: Matsayin ƙiyayya na silicon carbide ya fi sau 3 na silicon, wanda ya dace da Haske Na'urar Wuta Hanya.
2. Babban ƙarfin yanki mai Girma: ƙarfin filin yanki shine sau 10 da silicon, ya dace da aikace-aikacen matsin lamba.
3.Daga Bandgap: Ban Bandgap shine 3.26EV (4H-SIC), dace da babban zazzabi da aikace-aikace masu yawa.
4. Babban wuya: Mohs Hardness shine 9.2, na biyu kawai ga lu'u-lu'u, kyakkyawan sa juriya da ƙarfin injiniya.
5. Dogara ta sinalism: tsoratarwar lahani mai ƙarfi, rawar jiki a cikin babban zazzabi da matsanancin yanayi.
6. Manyan Girma: 12 inch (300mm) substrate, inganta samarwa, rage farashin naúrar.
7.Low decessilyarity: ingancin ingancin girki don tabbatar da ƙarancin ƙarancin gaske.
Babban samfurin tsarin aiki
1.
Mosufets: Amfani da shi a cikin motocin lantarki, motocin masana'antu da masu sauya wutar lantarki.
Anyi kamar abubuwa masu guba. Kamar yadda Schd), aka yi amfani da shi don ingantaccen rexipation canji da sauya kayan aiki.
2. Na'urorin rf:
RFF isphlifier: Amfani da shi a cikin tashoshin tashoshin sadarwa na 5G da hanyoyin sadarwa na tauraron dan adam.
Na'urorin microwave: dace da radar da tsarin sadarwa na mara waya.
3. Sabon motocin makamashi:
Tsarin Motar Wutar lantarki: Masu kula da motsa jiki da kuma masu shiga motoci don motocin lantarki.
Cajin tarin kuɗi: Module na Wuta don karɓar kayan aikin sauri.
4. Aikace-aikace Masana'antu:
Inverter mai ƙarfi na Voltage: don sarrafa motocin masana'antu da kuma sarrafa makamashi.
Smart Grid: don watsa HvDC da watsa HVDC da kuma masu watsa shirye-shiryen lantarki.
5. Aerospace:
Babban sararin samaniya lantarki: Ya dace da babban yanayin zafi na kayan aiki na Aerospace.
6. Filin Bincike:
Babban Bandagap na Bandagap SeMiconduction: Don ci gaban kayan kayan semiconductor da na'urori.
A 12-inch silicon silstrate wani nau'in babban aiki na kayan aikin substicor na kayan aikin substrate tare da kyakkyawan aikin ƙwararrun ƙwararru kamar gizar iyaka Ana amfani dashi sosai a cikin lantarki na lantarki, na'urorin mitar rediyo, sabbin motocin masana'antu, sarrafa masana'antu da Aerospace, kuma babban abu ne don inganta haɓakar kayan lantarki mai zuwa.
Yayinda Silicon Carbide silsididdige a halin yanzu suna da karancin kai tsaye a cikin kayan lantarki masu amfani da su, na iya tallafawa hanyoyin samar da wutar lantarki don hanyoyin samar da wutar lantarki na gaba. A halin yanzu, babban ci gaban carbide substrate an mai da hankali a cikin filayen masana'antu kamar sabbin motocin siliforcial, kuma yana inganta masana'antar silifortory da masana'antu.
Xkh ta himmatu wajen samar da ingantattun abubuwa 12 na SCI tare da wadanda cikakkar goyon baya da sabis, gami da:
1. Samar da al'ada: bisa ga abokin ciniki yana buƙatar samar da rikici daban-daban, daidaituwa da kuma jingina substrate.
2. Gaske ingantawa: Bayar da abokan ciniki tare da tallafin fasaha na haɓakar epitaxal, masana'antu na na'urori da sauran hanyoyin inganta aikin samfurin.
3. Gwaji da Takaddun shaida: Bayar da Haɗin Kuskure da Takaddun shaida mai inganci don tabbatar da cewa substrate ya cika ka'idojin masana'antu.
4.r & d hadin gwiwa: tare da ci gaba da samar da na'urorin silicon carbide tare da abokan ciniki don inganta bidihin fasaha.
Ginshiƙi ginshiƙi
| 1 2 inch silicon carbide (Sic) substrate bayanai | |||||
| Sa | Zerompd Production Aji (z sa) | Tsarin tsari Sa (ption) | Dummy aji (D sa) | ||
| Diamita | 3 0 0 MM ~ 1305mm | ||||
| Gwiɓi | 4h-n | 750μm ± 15 μm | 750μm ± 25 μm | ||
| 4h-Si | 750μm ± 15 μm | 750μm ± 25 μm | |||
| Wafer Orientation | Kashe Axis: 4.0 ° zuwa <1120> ° for 4h-n, akan Axis: <0001> 4h-si | ||||
| Merhopiume | 4h-n | ≤0.4cm-2 | ≤4cm-2 | ≤25cm-2 | |
| 4h-Si | ≤5cm-2 | ≤10cm-2 | ≤25cm-2 | ||
| Jure wa | 4h-n | 0.015 ~ 0.024 ω · cm | 0.015 ~ 0.028 ω · cm | ||
| 4h-Si | ≥1E10 ω · | ≥1E5 ω · cm | |||
| Fasaha na farko | {10-10} ° | ||||
| Na farko tsawon | 4h-n | N / a | |||
| 4h-Si | Mashahuri | ||||
| Baki wariya | 3 mm | ||||
| Ltv / ttv / baka / warp | ≤5μm / ≤15 μm / ≤55 μm | ≤5μm / ≤15 □ □ □M / ≤55 □ □ □ □ | |||
| M | Polish Rauke1 NM | ||||
| Cmp raze0.2 nm | Rae0.5 nm | ||||
| Gefen fasa ta hanyar babban haske Hex faranti ta hanyar tsananin haske Yankunan polytyto ta hanyar tsananin haske Carbon Carbon Carbon Siliki na Silicon yana da haske mai ƙarfi | M Yankin tarawa ≤0.05% M Yankin tarawa ≤0.05% M | Tsawon Tsayi ≤ 20 mm, tsayi guda ɗaya2 mm Yankin tarawa ≤0.1% Tarihin tarawa Yankin tarawa ≤3% Taruwar tsattsarkan tsawo | |||
| Edge kwakwalwa ta babban ƙarfi | Babu wanda ya halatta ≥0.2mm fadin da zurfi | 7 izini, ≤1 mm kowannensu | |||
| (TSD) stringy discoration | ≤500 cm-2 | N / a | |||
| (BPD) ginin jirgin sama | ≤1000 cm-2 | N / a | |||
| Rashin Silicon Silicon Guduwa da Haske Mai Girma | M | ||||
| Marufi | Casetef Casette ko kwandon wafer | ||||
| Bayanan kula: | |||||
| 1 Kabiloli suna amfani da dukkan wafer surface sai dai yankin wariyar baki. Yakamata a bincika kutsawa a kan fuska kawai. 3 Bayanin dislocation ne kawai daga Koh etched Wafers. | |||||
Xkh za ta ci gaba da saka jari a bincike da ci gaba don inganta nasara na 12-inch silicon silside sime, yayin da Xkh ke bincika kayan lantarki, yayin da Xkh ke bincika kayan lantarki, yayin da Xkh ke bincika kayan lantarki, yayin da Xkh ke bincika kayan lantarki, yayin da Xkh ke bincika kayan lantarki, yayin da Xkh ke bincika kayan lantarki, yayin da Xkh ke bincika kayan lantarki, yayin da Xkh ta bincika na'urorin lantarki kamar na'urori masu amfani da shi, yayin da XR na na'urori) da kuma komawar komputa. Ta hanyar rage farashi da ƙara ƙarfi, Xkh za ta kawo wadata ga masana'antar semiconducory.
Cikakken zane
