12 inch SIC substrate silicon carbide Firayim diamita 300mm babban girman 4H-N Ya dace da zubar da zafi na na'urar wuta mai ƙarfi

12 inch SIC substrate silicon carbide Prime grade diamita 300mm babban girman 4H-N Ya dace da babban ƙarfin na'urar zafi mai Haɓaka Hoto

Takaitaccen Bayani:

Substrate silicon carbide mai inci 12 (SiC substrate) babban girma ne, babban kayan aikin semiconductor wanda aka yi daga kristal guda ɗaya na silicon carbide. Silicon carbide (SiC) wani abu ne mai fa'ida mai faɗin rata semiconductor abu tare da kyawawan kayan lantarki, thermal da injuna, wanda ake amfani da shi sosai a cikin kera na'urorin lantarki a cikin babban iko, babban mitar da yanayin zafi mai girma. Matsakaicin 12-inch (300mm) shine ƙayyadaddun ƙayyadaddun fasahar siliki carbide na yanzu, wanda zai iya haɓaka ingantaccen samarwa da rage farashi.

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Halayen samfur

1. High thermal conductivity: da thermal conductivity na silicon carbide ne fiye da 3 sau na silicon, wanda ya dace da babban iko na'urar zafi watsawa.

2. Ƙarfin fashe mai ƙarfi: Ƙarfin filin raguwa shine sau 10 na silicon, wanda ya dace da aikace-aikacen matsa lamba.

3.Wide bandgap: Ƙungiyar bandgap ita ce 3.26eV (4H-SiC), wanda ya dace da yawan zafin jiki da aikace-aikacen mita.

4. High hardness: Mohs hardness ne 9.2, na biyu kawai zuwa lu'u-lu'u, m lalacewa juriya da inji ƙarfi.

5. Chemical kwanciyar hankali: karfi lalata juriya, barga yi a high zafin jiki da kuma m yanayi.

6. Girman girma: 12 inch (300mm) substrate, inganta haɓakar samarwa, rage farashin naúrar.

7.Low lahani yawa: high quality guda crystal girma da fasaha don tabbatar da low lahani yawa da kuma high daidaito.

Babban jagorar aikace-aikacen samfur

1. Wutar lantarki:

Mosfets: Ana amfani da su a cikin motocin lantarki, injinan masana'antu da masu canza wuta.

Diodes: irin su Schottky diodes (SBD), ana amfani da su don ingantaccen gyarawa da canza kayan wuta.

2. Na'urorin Rf:

Rf power amplifier: ana amfani dashi a tashoshin sadarwa na 5G da sadarwar tauraron dan adam.

Na'urorin Microwave: Ya dace da radar da tsarin sadarwa mara waya.

3. Sabbin motocin makamashi:

Tsarin tuƙi na lantarki: masu sarrafa motoci da inverters don motocin lantarki.

Tari na caji: Tsarin wuta don kayan aikin caji mai sauri.

4. Aikace-aikacen masana'antu:

High ƙarfin lantarki inverter: don masana'antu sarrafa mota da makamashi management.

Smart Grid: Don watsawar HVDC da wutar lantarki.

5. Aerospace:

Babban zafin jiki na lantarki: dace da yanayin zafi mai zafi na kayan aikin sararin samaniya.

6. Filin bincike:

Binciken semiconductor mai faɗi: don haɓaka sabbin kayan semiconductor da na'urori.

Matsakaicin 12-inch silicon carbide substrate wani nau'in nau'in kayan aikin semiconductor ne mai inganci tare da kyawawan kaddarorin kamar babban ƙarfin zafin jiki, ƙarfin fashewar filin da fage mai faɗi. Ana amfani da shi sosai a cikin kayan lantarki, na'urorin mitar rediyo, sabbin motocin makamashi, sarrafa masana'antu da sararin samaniya, kuma abu ne mai mahimmanci don haɓaka haɓaka na gaba na na'urorin lantarki masu inganci da ƙarfi.

Yayin da siliki carbide substrates a halin yanzu suna da ƙarancin aikace-aikacen kai tsaye a cikin kayan lantarki na mabukaci kamar gilashin AR, yuwuwar su a cikin ingantaccen sarrafa wutar lantarki da ƙarancin lantarki na iya tallafawa nauyi, ingantaccen samar da wutar lantarki don na'urorin AR/VR na gaba. A halin yanzu, babban ci gaban siliki carbide substrate ya mayar da hankali a cikin masana'antu filayen kamar sabon makamashi motocin, sadarwa kayayyakin more rayuwa da kuma masana'antu aiki da kai, da kuma inganta semiconductor masana'antu don ci gaba a cikin mafi inganci da kuma amintacce shugabanci.

XKH ta himmatu wajen samar da ingantaccen 12 "SIC substrates tare da cikakken goyon bayan fasaha da sabis, gami da:

1. Musamman samar: A cewar abokin ciniki bukatar samar da daban-daban resistivity, crystal fuskantarwa da surface jiyya substrate.

2. Ƙaddamar da tsari: Samar da abokan ciniki tare da goyon bayan fasaha na ci gaban epitaxial, masana'antun na'ura da sauran matakai don inganta aikin samfurin.

3. Gwaji da takaddun shaida: Samar da ingantaccen gano lahani da takaddun shaida mai inganci don tabbatar da cewa ƙasa ta cika ka'idodin masana'antu.

Haɗin gwiwar 4.R & d: Haɗa haɓaka sabbin na'urori na silicon carbide tare da abokan ciniki don haɓaka haɓakar fasaha.

Taswirar bayanai

1 2 inch Silicon Carbide (SiC) Ƙayyadaddun Substrate
Daraja		Samfuran ZeroMPD Daraja (Z Grade)	Standard Production Daraja (P Grade)		Dummy Grade (D Grade)
Diamita		300mm ~ 305mm
Kauri	4 H-N	750μm± 15 μm	750μm± 25 μm
	4H-SI	750μm± 15 μm	750μm± 25 μm
Wafer Orientation		Kashe axis: 4.0° zuwa <1120>±0.5° don 4H-N, A kan axis: <0001>±0.5° don 4H-SI
Maƙarƙashiya Maɗaukaki	4 H-N	≤0.4cm-2	≤4cm-2		25cm-2
	4H-SI	≤5cm-2	≤10cm-2		25cm-2
Resistivity	4 H-N	0.015 ~ 0.024 Ω · cm			0.015 ~ 0.028 Ω · cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Hannun Filayen Firamare		{10-10} ± 5.0°
Tsawon Fitowa na Farko	4 H-N	N/A
	4H-SI	Daraja
Ƙarƙashin Ƙarfi		3 mm ku
LTV/TTV/Baka/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Tashin hankali		Yaren mutanen Poland Ra≤1 nm
		CMP Ra≤0.2 nm			≤0.5 nm
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara Hex Plates Ta Babban Haske mai ƙarfi Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi Haɗin Carbon Na gani Silicon Surface Scratches By High Intensity Light		Babu Tarin yanki ≤0.05% Babu Tarin yanki ≤0.05% Babu			Tsayin tarawa ≤ 20 mm, tsayi ɗaya≤2 mm Tarin yanki ≤0.1% Tarin yanki≤3% Tarin yanki ≤3% Tsayin tarawa≤1× diamita wafer
Chips Gefe Ta Babban Haske mai ƙarfi		Babu wanda aka halatta ≥0.2mm nisa da zurfinsa			7 izini, ≤1 mm kowanne
(TSD) Rushewar dunƙulewar zare		≤500 cm-2		N/A
(BPD) Tushe jirgin sama		≤1000 cm-2		N/A
Lalacewar Silicon Surface Ta Babban Haske mai ƙarfi		Babu
Marufi		Cassette mai yawa-wafer ko kwantena wafer guda ɗaya
Bayanan kula:
1 Iyakoki na lahani sun shafi gaba dayan saman wafer ban da yankin keɓe gefen. 2Ya kamata a duba karce a fuskar Si kawai. 3 Bayanin ɓarna daga KOH etched wafers ne kawai.

XKH za ta ci gaba da zuba jarurruka a cikin bincike da ci gaba don inganta ci gaba na 12-inch silicon carbide substrates a cikin babban girman, ƙananan lahani da babban daidaituwa, yayin da XKH ke bincikar aikace-aikacensa a cikin yankunan da ke tasowa kamar kayan lantarki masu amfani (irin su na'urorin wutar lantarki don na'urorin AR / VR) da ƙididdigar ƙididdiga. Ta hanyar rage farashi da haɓaka iya aiki, XKH zai kawo wadata ga masana'antar semiconductor.