Substrate
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Substrate na Silicon-On-Insulator SOI ya ƙunshi layuka uku na Microelectronics da Mitar Rediyo
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Insulator na SOI akan wafers na silicon mai inci 8 da inci 6 SOI (Silicon-On-Insulator)
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6inch SiC Epitaxiy wafer N/P nau'in yarda da musamman
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Wafer ɗin yumbu na alumina mai inci 4 tsarki 99% mai jure lalacewa ta polycrystalline kauri 1mm
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Wafer SiC mai girman inci 8 mai girman inci 4H-N mai girman inci 200mm
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Wafer ɗin silicon dioxide mai kauri SiO2 mai gogewa, mai inganci da kuma matakin gwaji
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Iri 4H-N Dia205mm SiC daga China P da D aji Monocrystaline
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Wafer ɗin FZ CZ Si yana cikin hannun jari na inci 12 na Silicon wafer Prime ko Test
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Dia150mm 4H-N 6inch SiC substrate samarwa da darajar ƙarya
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Wafer mai inci 3 Dia76.2mm mai launin shuɗi mai kauri 0.5mm C-plane SSP
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Wafer ɗin silicon mai inci 8 P/N-type (100) 1-100Ω roba mai sake yin amfani da shi
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Wafer ɗin SiC Epi mai inci 4 don MOS ko SBD