Substrate
-
Sapphire ball ruwan tabarau na gani na gani Al2O3 kayan watsa kewayon 0.15-5.5um Dia 1mm 1.5mm
-
ƙwallon sapphire Dia 1.0 1.1 1.5 don ruwan tabarau na gani ball babban taurin crystal ɗaya
-
sapphire dia launin sapphire dia don agogon hannu, mai daidaitawa dia 40 38mm kauri 350um 550um, babban m
-
InSb wafer 2inch 3inch wanda ba a rufe shi ba Ntype P nau'in daidaitawa 111 100 don Gano Infrared
-
Indium Antimonide (InSb) wafers N nau'in P nau'in Epi shirye unndoped Te doped ko Ge doped 2inch 3inch 4inch kauri Indium Antimonide (InSb) wafers
-
SiC wafer 4H-N 6H-N HPSI 4H-Semi 6H-semi 4H-P 6H-P 3C nau'in 2inch 3inch 4inch 6inch 8inch
-
Sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY Hanyar da za a iya daidaitawa
-
2 inch Sic silicon carbide substrate 6H-N Nau'in 0.33mm 0.43mm polishing mai gefe biyu High thermal conductivity low ikon amfani
-
GaAs high-power epitaxial wafer substrate gallium arsenide wafer ikon Laser tsayin tsayin 905nm don maganin likitancin Laser
-
GaAs Laser Epitaxial wafer 4 inch 6 inch VCSEL tsaye ramummuka filaye watsi Laser zango 940nm guda junction
-
2inch 3inch 4inch InP epitaxial wafer substrate APD mai gano haske don sadarwar fiber optic ko LiDAR
-
zoben sapphire da aka yi da kayan sapphire na roba Mai haske da taurin Mohs na musamman na 9